Scrambling and thermalization in a diffusive quantum many-body system

Out-of-time ordered (OTO) correlation functions describe scrambling of information in correlated quantum matter. They are of particular interest in incoherent quantum systems lacking well defined quasi-particles. Thus far, it is largely elusive how OTO correlators spread in incoherent systems with diffusive transport governed by a few globally conserved quantities. Here, we study the dynamical response of such a system using high-performance matrix-product-operator techniques. Specifically, we consider the non-integrable, one-dimensional Bose-Hubbard model in the incoherent high-temperature regime. Our system exhibits diffusive dynamics in time-ordered correlators of globally conserved quantities, whereas OTO correlators display a ballistic, light-cone spreading of quantum information. The slowest process in the global thermalization of the system is thus diffusive, yet information spreading is not inhibited by such slow dynamics. We furthermore develop an experimentally feasible protocol to overcome some challenges faced by existing proposals and to probe time-ordered and OTO correlation functions. Our study opens new avenues for both the theoretical and experimental exploration of thermalization and information scrambling dynamics.Comment: 7+4 pages, 8+3 figures; streamlined versio

Pressure and temperature driven phase transitions in HgTe quantum wells

We present theoretical investigations of pressure and temperature driven phase transitions in HgTe quantum wells grown on CdTe buffer. Using the 8-band \textbf{k$\cdot$p} Hamiltonian we calculate evolution of energy band structure at different quantum well width with hydrostatic pressure up to 20 kBar and temperature ranging up 300 K. In particular, we show that in addition to temperature, tuning of hydrostatic pressure allows to drive transitions between semimetal, band insulator and topological insulator phases. Our realistic band structure calculations reveal that the band inversion under hydrostatic pressure and temperature may be accompanied by non-local overlapping between conduction and valence bands. The pressure and temperature phase diagrams are presented.Comment: 9 pages, 8 figures + Supplemental material (5 pages

Submerged entry nozzle clogging during continuous casting of Al-killed steel

Nozzle clogging is a common problem in the production of continuously cast Al-killed steels. Clogging occurs when there are solid inclusions in molten steel at casting temperatures. SENs (Submerged entry nozzles) from continuous casting of Al-killed low alloy steel grades with increased content of sulfur (0,020 to 0,035 % S) were examined. The examinations revealed that the deposits are mainly alumina based, with spinel and sulfur inclusions and some entrapped steel melt. It was concluded that the process of clogging begins when the steel melt infiltrates the refractory and removes the protective zirconia surface, thus allowing the adhesion of fine solid aluminates, which form the deposits

Weak antilocalization in a 2D electron gas with the chiral splitting of the spectrum

Motivated by the recent observation of the metal-insulator transition in Si-MOSFETs we consider the quantum interference correction to the conductivity in the presence of the Rashba spin splitting. For a small splitting, a crossover from the localizing to antilocalizing regime is obtained. The symplectic correction is revealed in the limit of a large separation between the chiral branches. The relevance of the chiral splitting for the 2D electron gas in Si-MOSFETs is discussed.Comment: 7 pages, REVTeX. Mistake corrected; in the limit of a large chiral splitting the correction to the conductivity does not vanish but approaches the symplectic valu

High intensity study of THz detectors based on field effect transistors

Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect transistors and InGaAs high electron mobility transistors. The photoresponse increased linearly with increasing radiation power up to kW/cm^2 range. The saturation of the photoresponse was observed for all investigated field effect transistors for intensities above several kW/cm^2. The observed signal saturation is explained by drain photocurrent saturation similar to saturation in direct currents output characteristics. The theoretical model of terahertz field effect transistor photoresponse at high intensity was developed. The model explains quantitatively experimental data both in linear and nonlinear (saturation) range. Our results show that dynamic range of field effect transistors is very high and can extend over more than six orderd of magnitudes of power densities (from 0.5 mW/cm^2 to 5 kW/cm^2)

Plasmons and Coulomb drag in Dirac/Schroedinger hybrid electron systems

We show that the plasmon spectrum of an ordinary two-dimensional electron gas (2DEG) hosted in a GaAs heterostructure is significantly modified when a graphene sheet is placed on the surface of the semiconductor in close proximity to the 2DEG. Long-range Coulomb interactions between massive electrons and massless Dirac fermions lead to a new set of optical and acoustic intra-subband plasmons. Here we compute the dispersion of these coupled modes within the Random Phase Approximation, providing analytical expressions in the long-wavelength limit that shed light on their dependence on the Dirac velocity and Dirac-fermion density. We also evaluate the resistivity in a Coulomb-drag transport setup. These Dirac/Schroedinger hybrid electron systems are experimentally feasible and open new research opportunities for fundamental studies of electron-electron interaction effects in two spatial dimensions.Comment: 7 pages, 4 figure

Analysis of negative magnetoresistance. Statistics of closed paths. II. Experiment

It is shown that a new kind of information can be extracted from the Fourier transform of negative magnetoresistance in 2D semiconductor structures. The procedure proposed provides the information on the area distribution function of closed paths and on the area dependence of the average length of closed paths. Based on this line of attack the method of analysis of the negative magnetoresistance is suggested. The method has been used to process the experimental data on negative magnetoresistance in 2D structures with different relations between the momentum and phase relaxation times. It is demonstrated this fact leads to distinction in the area dependence of the average length of closed paths.Comment: 5 pages, 5 figures, to be published in Phys.Rev.

Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a circular polarization the current measured between source and drain contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized radiation the total current is described by superposition of the Stokes parameters with different weights. Moreover, by variation of gate voltages applied to individual gratings the photocurrent can be defined either by the Stokes parameter defining the radiation helicity or those for linear polarization. We show that artificial non-centrosymmetric microperiodic structures with a two-dimensional electron system excited by THz radiation exhibit a dc photocurrent caused by the combined action of a spatially periodic in-plane potential and spatially modulated light. The results provide a proof of principle for the application of DGG HEMT for all-electric detection of the radiation's polarization state.Comment: 7 pages, 4 figure

Temperature-induced topological phase transition in HgTe quantum wells

We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different temperatures and we follow the temperature evolution of a peculiar pair of "zero-mode" Landau levels, which split from the edge of electron-like and hole-like subbands. Their crossing at critical magnetic field $B_c$ is a characteristic of inverted band structure in the quantum well. By measuring the temperature dependence of $B_c$, we directly extract the critical temperature $T_c$, at which the bulk band-gap vanishes and the topological phase transition occurs. Above this critical temperature, the opening of a trivial gap is clearly observed.Comment: 5 pages + Supplemental Materials; Phys. Rev. Lett. (accepted