Higher Kac-Moody algebras and symmetries of holomorphic field theories

We introduce a higher dimensional generalization of the affine Kac-Moody algebra using the language of factorization algebras. In particular, on any complex manifold there is a factorization algebra of "currents" associated to any Lie algebra. We classify local cocycles of these current algebras, and compare them to central extensions of higher affine algebras recently proposed by Faonte-Hennion-Kapranov. A central goal of this paper is to witness higher Kac-Moody algebras as symmetries of a class of holomorphic quantum field theories. In particular, we prove a generalization of the free field realization of an affine Kac-Moody algebra and also develop the theory of q-characters for this class of algebras in terms of factorization homology. Finally, we exhibit the "large N" behavior of higher Kac-Moody algebras and their relationship to symmetries of non-commutative field theories

A survey of the plankton of Monterey Bay

The purpose of this paper is to add to the identification of planktonic forms found in Monterey Bay, and also to compare the composition and population fluctuation with findings of previous years

Development of Prognosis in Palliative care Study (PiPS) predictor models to improve prognostication in advanced cancer: prospective cohort study

OBJECTIVE: To develop a novel prognostic indicator for use in patients with advanced cancer that is significantly better than clinicians' estimates of survival. DESIGN: Prospective multicentre observational cohort study. SETTING: 18 palliative care services in the UK (including hospices, hospital support teams, and community teams). PARTICIPANTS: 1018 patients with locally advanced or metastatic cancer, no longer being treated for cancer, and recently referred to palliative care services. MAIN OUTCOME MEASURES: Performance of a composite model to predict whether patients were likely to survive for "days" (0-13 days), "weeks" (14-55 days), or "months+" (>55 days), compared with actual survival and clinicians' predictions. RESULTS: On multivariate analysis, 11 core variables (pulse rate, general health status, mental test score, performance status, presence of anorexia, presence of any site of metastatic disease, presence of liver metastases, C reactive protein, white blood count, platelet count, and urea) independently predicted both two week and two month survival. Four variables had prognostic significance only for two week survival (dyspnoea, dysphagia, bone metastases, and alanine transaminase), and eight variables had prognostic significance only for two month survival (primary breast cancer, male genital cancer, tiredness, loss of weight, lymphocyte count, neutrophil count, alkaline phosphatase, and albumin). Separate prognostic models were created for patients without (PiPS-A) or with (PiPS-B) blood results. The area under the curve for all models varied between 0.79 and 0.86. Absolute agreement between actual survival and PiPS predictions was 57.3% (after correction for over-optimism). The median survival across the PiPS-A categories was 5, 33, and 92 days and survival across PiPS-B categories was 7, 32, and 100.5 days. All models performed as well as, or better than, clinicians' estimates of survival. CONCLUSIONS: In patients with advanced cancer no longer being treated, a combination of clinical and laboratory variables can reliably predict two week and two month survival

On the diffusion of lattice matched InGaAs/InP microstructures

Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in F. Bollet et al., J. Appl. Phys. 93, 3881 (2003) and may be found at http://link.aip.org/link/?jap/93/388

An effective electrical isolation scheme by iron implantation at different substrate temperatures

High-energy implantation of iron in n-type doped InP epilayers at different substrate temperatures: 77K, room temperature (RT), 100degreesC and 200degreesC was investigated to study the electrical isolation of n-type InP. Iron isolation implants were performed at 1MeV with a fluence of 5 x 10(14) /cm(2). This isolation scheme was chosen to place most of the iron atoms well inside the n-type doped layer. The sheet resistivity (R,), sheet carrier concentration (n(S)) and sheet mobility (p) were measured as a function of substrate temperature and post-implantation annealing temperature (100 - 800degreesC). Samples implanted at 77K, RT and 100degreesC show more or less the same trend of postimplant annealing characteristics. A maximum sheet resistivity of similar to1 x 10(7) Omega/rectangle was achieved for samples implanted at 77K, RT and 100degreesC after annealing at 400degreesC. A lower resistivity of similar to1 x 10(6) Omega/rectangle was obtained for a 200degreesC implant after annealing at 4000C. Lower damage accumulation due to enhanced dynamic annealing is observed for the highest implantation temperature. For 200degreesC substrate temperature, annealing above 4000C resulted in a gradual decrease in sheet resistivity to a value close to that of the starting material. But this is not the case for the lower substrate temperatures. The sheet resistivity was increased again for 77K, RT and 100()C implant after annealing at 600degreesC. We infer that for 77K, RT and 100degreesC implantation temperatures, the electrical isolation is due to a product of both damage related centers and defects related to the presence of Fe whereas for 200degreesC substrate temperature, we infer that only damage induced compensation removes the carriers. These results show the importance of iron implants as a device isolation scheme.</p

Highly conductive Sb-doped layers in strained Si

The ability to create stable, highly conductive ultrashallow doped regions is a key requirement for future silicon-based devices. It is shown that biaxial tensile strain reduces the sheet resistance of highly doped n-type layers created by Sb or As implantation. The improvement is stronger with Sb, leading to a reversal in the relative doping efficiency of these n-type impurities. For Sb, the primary effect is a strong enhancement of activation as a function of tensile strain. At low processing temperatures, 0.7% strain more than doubles Sb activation, while enabling the formation of stable, ~10-nm-deep junctions. This makes Sb an interesting alternative to As for ultrashallow junctions in strain-engineered complementary metal-oxide-semiconductor device

Electrical properties of Bi-implanted amorphous chalcogenide films

The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x1016 cm-2. The enhanced conductivity is accompanied by defect accumulation in the films upon implantation as is inferred by using analysis of the space-charge limited current. The results indicate that native coordination defects in lone-pair semiconductors can be deactivated by means of ion implantation, and higher conductivity of the films stems from additional electrically active defects created by implantation of bismuth.Comment: This is an extended version of the results presented in Proc. SPIE 8982, 898213 (2014