890 research outputs found
Ion Beam Induced Charge Microscopy of Integrated Circuits
The ion beam induced charge (IBIC) microscopy technique has recently been developed as a means of imaging the depletion regions of working microelectronic devices beneath their thick metallisation and passivation layers. IBIC microscopy is analogous to electron beam induced current microscopy but has the advantages of a larger analytical depth, lower lateral scattering of the incident focused MeV ion beam and negligible charging effects. These characteristics enable IBIC to image small, buried active device regions without the need to remove the surface layers prior to analysis. The basis of this new technique is outlined and the applications for integrated circuit analysis, characterising upset mechanisms, and for imaging dislocation networks in semiconductor wafers are reviewed
Cationic vacancy induced room-temperature ferromagnetism in transparent conducting anatase Ti_{1-x}Ta_xO_2 (x~0.05) thin films
We report room-temperature ferromagnetism in highly conducting transparent
anatase Ti1-xTaxO2 (x~0.05) thin films grown by pulsed laser deposition on
LaAlO3 substrates. Rutherford backscattering spectrometry (RBS), x-ray
diffraction (XRD), proton induced x-ray emission (PIXE), x-ray absorption
spectroscopy (XAS) and time-of-flight secondary ion mass spectrometry
(TOF-SIMS) indicated negligible magnetic contaminants in the films. The
presence of ferromagnetism with concomitant large carrier densities was
determined by a combination of superconducting quantum interference device
(SQUID) magnetometry, electrical transport measurements, soft x-ray magnetic
circular dichroism (SXMCD), XAS, and optical magnetic circular dichroism (OMCD)
and was supported by first-principle calculations. SXMCD and XAS measurements
revealed a 90% contribution to ferromagnetism from the Ti ions and a 10%
contribution from the O ions. RBS/channelling measurements show complete Ta
substitution in the Ti sites though carrier activation was only 50% at 5% Ta
concentration implying compensation by cationic defects. The role of Ti vacancy
and Ti3+ was studied via XAS and x-ray photoemission spectroscopy (XPS)
respectively. It was found that in films with strong ferromagnetism, the Ti
vacancy signal was strong while Ti3+ signal was absent. We propose (in the
absence of any obvious exchange mechanisms) that the localised magnetic
moments, Ti vacancy sites, are ferromagnetically ordered by itinerant carriers.
Cationic-defect-induced magnetism is an alternative route to ferromagnetism in
wide-band-gap semiconducting oxides without any magnetic elements.Comment: 21 pages, 10 figures, to appear in Philosophical Transaction - Royal
Soc.
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