From Strong to Weak Coupling Regime in a Single GaN Microwire up to Room Temperature

Large bandgap semiconductor microwires constitute a very advantageous alternative to planar microcavities in the context of room temperature strong coupling regime between exciton and light. In this work we demonstrate that in a GaN microwire, the strong coupling regime is achieved up to room temperature with a large Rabi splitting of 125 meV never achieved before in a Nitride-based photonic nanostructure. The demonstration relies on a method which doesn't require any knowledge \'a priori on the photonic eigenmodes energy in the microwire, i.e. the details of the microwire cross-section shape. Moreover, using a heavily doped segment within the same microwire, we confirm experimentally that free excitons provide the oscillator strength for this strong coupling regime. The measured Rabi splitting to linewidth ratio of 15 matches state of the art planar Nitride-based microcavities, in spite of a much simpler design and a less demanding fabrication process. These results show that GaN microwires constitute a simpler and promising system to achieve electrically pumped lasing in the strong coupling regime.Comment: 14 pages, 4 figure

Controlling the charge environment of single quantum dots in a photonic-crystal cavity

We demonstrate that the presence of charge around a semiconductor quantum dot (QD) strongly affects its optical properties and produces non-resonant coupling to the modes of a microcavity. We first show that, besides (multi)exciton lines, a QD generates a spectrally broad emission which efficiently couples to cavity modes. Its temporal dynamics shows that it is related to the Coulomb interaction between the QD (multi)excitons and carriers in the adjacent wetting layer. This mechanism can be suppressed by the application of an electric field, making the QD closer to an ideal two-level system.Comment: 12 pages, 4 figure

Single photonics at telecom wavelengths using nanowire superconducting detectors

Single photonic applications - such as quantum key distribution - rely on the transmission of single photons, and require the ultimate sensitivity that an optical detector can achieve. Single-photon detectors must convert the energy of an optical pulse containing a single photon into a measurable electrical signal. We report on fiber-coupled superconducting single-photon detectors (SSPDs) with specifications that exceed those of avalanche photodiodes (APDs), operating at telecommunication wavelength, in sensitivity, temporal resolution and repetition frequency. The improved performance is demonstrated by measuring the intensity correlation function g(2)(t) of single-photon states at 1300nm produced by single semiconductor quantum dots (QDs).Comment: 7 pages, 5 figures - submitted 12 OCT 200

Quantum magnetism and counterflow supersolidity of up-down bosonic dipoles

We study a gas of dipolar Bosons confined in a two-dimensional optical lattice. Dipoles are considered to point freely in both up and down directions perpendicular to the lattice plane. This results in a nearest neighbor repulsive (attractive) interaction for aligned (anti-aligned) dipoles. We find regions of parameters where the ground state of the system exhibits insulating phases with ferromagnetic or anti-ferromagnetic ordering, as well as with rational values of the average magnetization. Evidence for the existence of a novel counterflow supersolid quantum phase is also presented.Comment: 8 pages, 6 figure

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Rev. 3, 041303 (2016) and may be found at https://doi.org/10.1063/1.4963919.The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade

Spatial regularity of InAs-GaAs quantum dots: quantifying the dependence of lateral ordering on growth rate.

The lateral ordering of arrays of self-assembled InAs-GaAs quantum dots (QDs) has been quantified as a function of growth rate, using the Hopkins-Skellam index (HSI). Coherent QD arrays have a spatial distribution which is neither random nor ordered, but intermediate. The lateral ordering improves as the growth rate is increased and can be explained by more spatially regular nucleation as the QD density increases. By contrast, large and irregular 3D islands are distributed randomly on the surface. This is consistent with a random selection of the mature QDs relaxing by dislocation nucleation at a later stage in the growth, independently of each QD's surroundings. In addition we explore the statistical variability of the HSI as a function of the number N of spatial points analysed, and we recommend N > 10(3) to reliably distinguish random from ordered arrays

Enhanced spontaneous emission in a photonic crystal light-emitting diode

We report direct evidence of enhanced spontaneous emission in a photonic crystal (PhC) light-emitting diode. The device consists of p-i-n heterojunction embedded in a suspended membrane, comprising a layer of self-assembled quantum dots. Current is injected laterally from the periphery to the center of the PhC. A well-isolated emission peak at 1300nm from the PhC cavity mode is observed, and the enhancement of the spontaneous emission rate is clearly evidenced by time-resolved electroluminescence measurements, showing that our diode switches off in a time shorter than the bulk radiative and nonradiative lifetimesComment: 10 page

Growth-interruption-induced low-density InAs quantum dots on GaAs

We investigate the use of growth interruption to obtain low-density InAs quantum dots (QDs) on GaAs. The process was realized by Ostwald-type ripening of a thin InAs layer. It was found that the optical properties of the QDs as a function of growth interruption strongly depend on InAs growth rate. By using this approach, a low density of QDs (4 dots/ µm2) with uniform size distribution was achieved. As compared to QDs grown without growth interruption, a larger energy separation between the QD confined levels was observed, suggesting a situation closer to the ideal zero-dimensional system. Combining with an InGaAs capping layer such as In-rich QDs enable 1.3 µm emission at 4 K

Growth-interruption-induced low-density InAs quantum dots on GaAs

We investigate the use of growth interruption to obtain low-density InAs quantum dots (QDs) on GaAs. The process was realized by Ostwald-type ripening of a thin InAs layer. It was found that the optical properties of the QDs as a function of growth interruption strongly depend on InAs growth rate. By using this approach, a low density of QDs (4 dots/mu m(2)) with uniform size distribution was achieved. As compared to QDs grown without growth interruption, a larger energy separation between the QD confined levels was observed, suggesting a situation closer to the ideal zero-dimensional system. Combining with an InGaAs capping layer such as In-rich QDs enable 1.3 mu m emission at 4 K. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000483