Estimation of the Instantaneous Harmonic Parameters of Speech

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The Effect of Atmospheric Pollution on Building Materials in the Urban Environment

Nowadays atmospheric pollution affects not only the urban environment in general, but building materials, which leads to their corrosion, in particular. The article discusses the regularities of the adhesion process of particulate matter (dust) on the vertical surfaces of buildings and structures, which are made of various building materials. On the basis of experimental studies, regression dependences of the adhesion of urban dust on different vertical surfaces from random determining factors were obtained. Thus, by studying the regularities of pollution of urban environment objects, made of various building materials, it is possible to achieve their preservation, since they demonstrate the architectural and design features of various historical periods of the country's development

Universal radiation tolerant semiconductor

Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in gamma-Ga2O3. In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the beta-to-gamma Ga2O3 transformation, as a function of the increased disorder in beta-Ga2O3 and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that gamma/beta double polymorph Ga2O3 structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors

Effects of implantation temperature and annealing on structural evolution and migration of Se into glassy carbon

Please read abstract in the article.The AST&D scholarship from the Tertiary Education Trust Fund (TETFund), Nigeria, and the Postgraduate Bursary from the University of Pretoria, South Africa.http://www.elsevier.com/locate/sssciehj2023Physic

Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering

Homoepitaxial ZnO growth is demonstrated from conventional RF-sputtering at 400 °C on both Zn and O polar faces of hydrothermally grown ZnO substrates. A minimum yield for the Rutherford backscattering and channeling spectrum, χmin, equal to ∼3% and ∼12% and a full width at half maximum of the 00.2 diffraction peak rocking curve of (70 ± 10) arc sec and (1400 ± 100) arc sec have been found for samples grown on the Zn and O face, respectively. The structural characteristics of the film deposited on the Zn face are comparable with those of epilayers grown by more complex techniques like molecular beam epitaxy. In contrast, the film simultaneously deposited on the O-face exhibits an inferior crystalline structure ∼0.7% strained in the c-direction and a higher atomic number contrast compared with the substrate, as revealed by high angle annular dark field imaging measurements. These differences between the Zn- and O-face films are discussed in detail and associated with the different growth mechanisms prevailing on the two surfacesThis work has been performed within “The Norwegian Research Centre for Solar Cell Technology” Project No. 193829, a Centre for Environment-friendly Energy Research co-sponsored by the Norwegian Research Council and research and industry partners in Norway and the Frienergi program. R.S. acknowledges the partial support from the EU 7th Framework Programme Project No. REGPOT-CT-2013- 316014 (EAgLE)

Energetics, migration and trapping of Zn interstitials in ZnO

Zn interstitial (Zni) is one of the fundamental intrinsic defects in ZnO and prominently affects the physical properties of the material. Here, the energetics and migration properties of Zni have been studied in ion implanted ZnO using a new approach based on the Li marker diffusion. Specifically, ZnO single crystals were implanted with 3.2 keV/amu B and BF2 ions and the release of Zni from the implanted regions during annealing was correlated with the advance of the characteristic Li depleted region into the bulk of the samples. Using this methodology, we calculate the activation energy of 1.45 eV to govern the process for B implants. Assuming that the migration energy of Zni to be of ~0.6 eV, as discussed previously in literature, a barrier for releasing Zni from the implanted region may be estimated as ~0.8–0.9 eV. Meanwhile, in the BF2 implanted samples, the migration of Zni is less efficient, as interpreted from the Li redistribution features in these samples; in particular, it is argued that Zni may be trapped by defect complexes related to the presence of F