6 research outputs found
Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors
We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon−molecular−ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon−molecular−ion−implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors
Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH<sub>2</sub>P Molecular Ion Implantation
Using a new implantation technique with multielement molecular ions consisting of carbon, hydrogen, and phosphorus, namely, CH2P molecular ions, we developed an epitaxial silicon wafer with proximity gettering sinks under the epitaxial silicon layer to improve the gettering capability for metallic impurities. A complementary metal-oxide-semiconductor (CMOS) image sensor fabricated with this novel epitaxial silicon wafer has a markedly reduced number of white spot defects, as determined by dark current spectroscopy (DCS). In addition, the amount of nickel impurities gettered in the CH2P-molecular-ion-implanted region of this CMOS image sensor is higher than that gettered in the C3H5-molecular-ion-implanted region; and this implanted region is formed by high-density black pointed defects and deactivated phosphorus after epitaxial growth. From the obtained results, the CH2P-molecular-ion-implanted region has two types of complexes acting as gettering sinks. One includes carbon-related complexes such as aggregated C–I, and the other includes phosphorus-related complexes such as P4–V. These complexes have a high binding energy to metallic impurities. Therefore, CH2P-molecular-ion-implanted epitaxial silicon wafers have a high gettering capability for metallic impurities and contribute to improving the device performance of CMOS image sensors. (This manuscript is an extension from a paper presented at the 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2022))
TEM Image Analysis and Simulation Physics for Two-Step Recrystallization of Discretely Amorphized C<sub>3</sub>H<sub>5</sub>-Molecular-Ion-Implanted Silicon Substrate Surface
In this study, we investigate the initial rapid recrystallization of a discretely amorphized C3H5-molecular-ion-implanted silicon (Si) substrate surface in the subsequent thermal annealing treatment through the analysis of plan-view transmission electron microscopy (TEM) images and technology computer-aided design (TCAD) process simulation. In the approach of the analysis of the plan-view TEM image of the Si substrate surface, we found that initial rapid recrystallization occurs in the intermediate regions between the residual crystalline and discrete amorphous regions formed in the C3H5-molecular-ion-implanted Si substrate surface. In addition, the TCAD process simulation results indicate that the intermediate regions correspond to the amorphous pockets formed around the discrete amorphous regions in the C3H5-molecular-ion-implanted Si substrate surface and are recrystallized preferentially during the short thermal annealing time. These plan-view TEM image analysis and TCAD process simulation results reveal a two-step recrystallization of the discretely amorphized C3H5-molecular-ion-implaned Si substrate surface. After the initial rapid recrystallization of amorphous pockets in the 1st step, the recrystallization of discrete amorphous regions starts in the 2nd step. The incubation period between the 1st and 2nd steps is the time required to recrystallize the amorphous pockets around the discrete amorphous regions completely and redefine the amorphous/crystalline interface