Impact Excitation by Hot Carriers in Carbon Nanotubes

We investigate theoretically the efficiency of intra-molecular hot carrier induced impact ionization and excitation processes in carbon nanotubes. The electron confinement and reduced screening lead to drastically enhanced excitation efficiencies over those in bulk materials. Strong excitonic coupling favors neutral excitations over ionization, while the impact mechanism populates a different set of states than that produced by photoexcitation. The excitation rate is strongly affected by optical phonon excitation and a simple scaling of the rate with the field strength and optical phonon temperature is obtained.Comment: 5 pages 4 figure

Anisotropic exciton Stark shift in black phosphorus

We calculate the excitonic spectrum of few-layer black phosphorus by direct diagonalization of the effective mass Hamiltonian in the presence of an applied in-plane electric field. The strong attractive interaction between electrons and holes in this system allows one to investigate the Stark effect up to very high ionizing fields, including also the excited states. Our results show that the band anisotropy in black phosphorus becomes evident in the direction dependent field induced polarizability of the exciton

Disorder induced local density of states oscillations on narrow Ag(111) terraces

The local density of states of Ag(111) has been probed in detail on disordered terraces of varying width by dI/dV-mapping with a scanning tunneling microscope at low temperatures. Apparent shifts of the bottom of the surface-state band edge from terrace induced confinement are observed. Disordered terraces show interesting contrast reversals in the dI/dV maps as a function of tip-sample voltage polarity with details that depend on the average width of the terrace and the particular edge profile. In contrast to perfect terraces with straight edges, standing wave patterns are observed parallel to the step edges, i.e. in the non-confined direction. Scattering calculations based on the Ag(111) surface states reproduce these spatial oscillations and all the qualitative features of the standing wave patterns, including the polarity-dependent contrast reversals.Comment: 19 pages, 12 figure

Operation of Graphene Transistors at GHz Frequencies

Top-gated graphene transistors operating at high frequencies (GHz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating an FET-like behavior for graphene transistors. The cutoff frequency fT is found to be proportional to the dc transconductance gm of the device. The peak fT increases with a reduced gate length, and fT as high as 26 GHz is measured for a graphene transistor with a gate length of 150 nm. The work represents a significant step towards the realization of graphene-based electronics for high-frequency applications

ОПАЛЬНИЙ ГОЛОВА ОБЛВИКОНКОМУ Г.Г. ДЕМЕНТЬЄВ

У статті висвітлюється життя та діяльність в органах міського самоврядування першого секретаря Дніпропетровського обкому КП(б)У та голови виконкому обласної ради депутатів трудящих, учасника Великої Вітчизняної війни 1941-1945 рр Г.Г.ДементьєваThis article introduces G.G.Dementyevs life and activities in local governmental organs. G.G.Dementyev was the first Secretari of Dniepropetrovsk Regional Executive Committee of the Communist Party ( bolchevyks) of Ukraine, participant in the Great Patriotic War ( from 1941-1945 )

How does the substrate affect the Raman and excited state spectra of a carbon nanotube?

We study the optical properties of a single, semiconducting single-walled carbon nanotube (CNT) that is partially suspended across a trench and partially supported by a SiO2-substrate. By tuning the laser excitation energy across the E33 excitonic resonance of the suspended CNT segment, the scattering intensities of the principal Raman transitions, the radial breathing mode (RBM), the G-mode and the D-mode show strong resonance enhancement of up to three orders of magnitude. In the supported part of the CNT, despite a loss of Raman scattering intensity of up to two orders of magnitude, we recover the E33 excitonic resonance suffering a substrate-induced red shift of 50 meV. The peak intensity ratio between G-band and D-band is highly sensitive to the presence of the substrate and varies by one order of magnitude, demonstrating the much higher defect density in the supported CNT segments. By comparing the E33 resonance spectra measured by Raman excitation spectroscopy and photoluminescence (PL) excitation spectroscopy in the suspended CNT segment, we observe that the peak energy in the PL excitation spectrum is red-shifted by 40 meV. This shift is associated with the energy difference between the localized exciton dominating the PL excitation spectrum and the free exciton giving rise to the Raman excitation spectrum. High-resolution Raman spectra reveal substrate-induced symmetry breaking, as evidenced by the appearance of additional peaks in the strongly broadened Raman G band. Laser-induced line shifts of RBM and G band measured on the suspended CNT segment are both linear as a function of the laser excitation power. Stokes/anti-Stokes measurements, however, reveal an increase of the G phonon population while the RBM phonon population is rather independent of the laser excitation power.Comment: Revised manuscript, 20 pages, 8 figure

Electron-phonon effects and transport in carbon nanotubes

We calculate the electron-phonon scattering and binding in semiconducting carbon nanotubes, within a tight binding model. The mobility is derived using a multi-band Boltzmann treatment. At high fields, the dominant scattering is inter-band scattering by LO phonons corresponding to the corners K of the graphene Brillouin zone. The drift velocity saturates at approximately half the graphene Fermi velocity. The calculated mobility as a function of temperature, electric field, and nanotube chirality are well reproduced by a simple interpolation formula. Polaronic binding give a band-gap renormalization of ~70 meV, an order of magnitude larger than expected. Coherence lengths can be quite long but are strongly energy dependent.Comment: 5 pages and 4 figure

Transmission through a biased graphene bilayer barrier

We study the electronic transmission through a graphene bilayer in the presence of an applied bias between layers. We consider different geometries involving interfaces between both a monolayer and a bilayer and between two bilayers. The applied bias opens a sizable gap in the spectrum inside the bilayer barrier region, thus leading to large changes in the transmission probability and electronic conductance that are controlled by the applied bias.Comment: 10 pages, 8 figures, extended versio

Spatial distribution of local currents of massless Dirac fermions in quantum transport through graphene nanoribbons

We employ the formalism of bond currents, expressed in terms of the nonequilibrium Green functions, to image the charge flow between two sites of the honeycomb lattice of graphene ribbons of few nanometers width. In sharp contrast to nonrelativistic electrons, current density profiles of quantum transport at energies close to the Dirac point in clean zigzag graphene nanoribbons (ZGNR) differs markedly from the profiles of charge density peaked at the edges due to zero-energy localized edge states. For transport through the lowest propagating mode induced by these edge states, edge vacancies do not affect current density peaked in the center of ZGNR. The long-range potential of a single impurity acts to reduce local current around it while concurrently increasing the current density along the zigzag edge, so that ZGNR conductance remains perfect $G=2e^2/h$.Comment: 5 pages, 5 figure