Impact Excitation by Hot Carriers in Carbon Nanotubes

We investigate theoretically the efficiency of intra-molecular hot carrier induced impact ionization and excitation processes in carbon nanotubes. The electron confinement and reduced screening lead to drastically enhanced excitation efficiencies over those in bulk materials. Strong excitonic coupling favors neutral excitations over ionization, while the impact mechanism populates a different set of states than that produced by photoexcitation. The excitation rate is strongly affected by optical phonon excitation and a simple scaling of the rate with the field strength and optical phonon temperature is obtained.Comment: 5 pages 4 figure

Graphene Plasmonics for Terahertz to Mid-Infrared Applications

In recent years, we have seen a rapid progress in the field of graphene plasmonics, motivated by graphene's unique electrical and optical properties, tunabilty, long-lived collective excitation and their extreme light confinement. Here, we review the basic properties of graphene plasmons; their energy dispersion, localization and propagation, plasmon-phonon hybridization, lifetimes and damping pathways. The application space of graphene plasmonics lies in the technologically significant, but relatively unexploited terahertz to mid-infrared regime. We discuss emerging and potential applications, such as modulators, notch filters, polarizers, mid-infrared photodetectors, mid-infrared vibrational spectroscopy, among many others.Comment: Review articl

Phonon mediated interlayer conductance in twisted graphene bilayers

Conduction between graphene layers is suppressed by momentum conservation whenever the layer stacking has a rotation. Here we show that phonon scattering plays a crucial role in facilitating interlayer conduction. The resulting dependence on orientation is radically different than previously expected, and far more favorable for device applications. At low temperatures, we predict diode-like current-voltage characteristics due to a phonon bottleneck. Simple scaling relationships give a good description of the conductance as a function of temperature, doping, rotation angle, and bias voltage, reflecting the dominant role of the interlayer beating phonon mode.Comment: 5 pages, 3 figures (+ 3 pages, 5 figures supplemental

Relaxation of Optically Excited Carriers in Graphene

We explore the relaxation of photo-excited graphene by solving a transient Boltzmann transport equation with electron-phonon (e-ph) and electron-electron (e-e) scattering. Simulations show that when the excited carriers are relaxed by e-ph scattering only, a population inversion can be achieved at energies determined by the photon energy. However, e-e scattering quickly thermalizes the carrier energy distributions washing out the negative optical conductivity peaks. The relaxation rates and carrier multiplication effects are presented as a function of photon energy and dielectric constant.Comment: 4 pages, 4 figure

Electron Interference Effects on the Conductance of Doped Carbon Nanotubes

We investigate the effects of impurity scattering on the conductance of metallic carbon nanotubes as a function of the relative separation of the impurities. First we compute the conductance of a clean (6,6) tube, and the effect of model gold contacts on this conductance. Then, we compute the effect of introducing a single, two, and three oxygen atom impurities. We find that the conductance of a single-oxygen-doped (6,6) nanotube decreases by about 30 % with respect to that of the perfect nanotube. The presence of a second doping atom induces strong changes of the conductance which, however, depend very strongly on the relative position of the two oxygen atoms. We observe regular oscillations of the conductance that repeat over an O-O distance that corresponds to an integral number of half Fermi-wavelengths ($m\lambda_F/2$). These fluctuations reflect strong electron interference phenomena produced by electron scattering from the oxygen defects whose contribution to the resistance of the tube cannot be obtained by simply summing up their individual contributions.Comment: 13 pages, 5 figures (eps and gif), to appear in J.Phys.Che

Exciton Ionization, Franz-Keldysh and Stark Effects in Carbon Nanotubes

We calculate the optical properties of carbon nanotubes in an external static electric field directed along the tube axis. We predict strong Franz-Keldysh oscillations in the first and second band-to-band absorption peaks, quadratic Stark effect of the first two excitons, and the field dependence of the bound exciton ionization rate for a wide range of tube chiralities. We find that the phonon assisted mechanism dominates the dissociation rate in electro-optical devices due to the hot optical phonons. We predict a quadratic dependence of the Sommerfeld factor on the electric field and its increase up to 2000% at the critical field of the full exciton dissociation.Comment: 12 pages, 5 figures, Nano Letters (2007

Phonon and Electronic Non-radiative Decay of Excitons in Carbon Nanotubes

We investigate theoretically the rates of non-radiative decay of excited semiconducting nanotubes by a variety of decay mechanisms and compare with experimental findings. We find that the multi-phonon decay (MPD) of free excitons is too slow to be responsible for the experimentally observed lifetimes. However, MPD lifetimes of localized excitons could be 2-3 orders of magnitude shorter. We also propose a new decay mechanism that relies on a finite doping of nanotubes and involves exciton decay into an optical phonon and an intraband electron-hole pair. The resulting lifetime is in the range of 5 to 100 ps, even for a moderate doping level.Comment: 4 pages, 3 figures, + 7 pages, 3 figures in attached appendi

Charge Transfer Induced Polarity Switching in Carbon Nanotube Transistors

We probed the charge transfer interaction between the amine-containing molecules: hydrazine, polyaniline and aminobutyl phosphonic acid, and carbon nanotube field effect transistors (CNTFETs). We successfully converted p-type CNTFETs to n-type and drastically improved the device performance in both the ON- and OFF- transistor states utilizing hydrazine as dopant. We effectively switched the transistor polarity between p- and n- type by accessing different oxidation states of polyaniline. We also demonstrated the flexibility of modulating the threshold voltage (Vth) of a CNTFET by engineering various charge-accepting and -donating groups in the same molecule.Comment: 4 pages, 3 figure

Origin of photoresponse in black phosphorus photo-transistors

We study the origin of photocurrent generated in doped multilayer BP photo-transistors, and find that it is dominated by thermally driven thermoelectric and bolometric processes. The experimentally observed photocurrent polarities are consistent with photo-thermal processes. The photo-thermoelectric current can be generated up to a $\mu$m away from the contacts, indicating a long thermal decay length. With an applied source-drain bias, a photo-bolometric current is generated across the whole device, overwhelming the photo-thermoelectric contribution at a moderate bias. The photo-responsivity in the multilayer BP device is two orders of magnitude larger than that observed in graphene