Weak localization of holes in high-mobility heterostructures

Theory of weak localization is developed for two-dimensional holes in semiconductor heterostructures. Ballistic regime of weak localization where the backscattering occurs from few impurities is studied with account for anisotropic momentum scattering of holes. The transition from weak localization to anti-localization is demonstrated for long dephasing times. For stronger dephasing the conductivity correction is negative at all hole densities due to non-monotonous dependence of the spin relaxation time on the hole wavevector. The anomalous temperature dependent correction to the conductivity is calculated. We show that the temperature dependence of the conductivity is non-monotonous at moderate hole densities.Comment: 5 pages, 4 figure

Spin-orbit interaction and the 'metal-insulator' transition observed in two-dimensional hole systems

We present calculations of the spin and phase relaxation rates in GaAs/AlGaAs $p$-type quantum wells. These rates are used to derive the temperature dependence of the weak-localization correction to the conductivity. In $p$-type quantum wells both weak localization and weak anti-localization are present due to the strong spin-orbit interaction. When determining the total conductivity correction one also have to include the term due to hole-hole interaction. The magnitude of the latter depends on the ratio between the thermal energy and the Fermi energy, $k_{\rm B}T/E_{\rm F}$ and whether the system can be considered as ballistic $(k_{\rm B}T \tau_{\rm tr} / \hbar>1)$ or diffusive ($k_{\rm B}T \tau_{\rm tr}/\hbar<1$). We argue that due to the relatively low Fermi energy and the moderate mobilities, in the $p$-type systems in question, the conductivity correction arising from hole-hole interactions is negligible at the highest temperatures accessible in the experiments. Hence the 'metal-insulator' transition observed at these relatively high temperatures could be caused by interference effects. We compare our calculations of the weak anti-localization correction with the experimental results from different independent groups with special emphasis on the experiments by Simmons et al. We find good agreement between predicted and observed transistion density $p_{c}$.Comment: 6 pages, 4 figures. Accepted to PRB (15 June, 2002

Conversion of hole states by acoustic solitons

The hole states in the valence band of a large class of semiconductors are degenerate in the projections of angular momentum. Here we show that the switching of a hole between the states can efficiently be realized by acoustic solitons. The microscopic mechanism of such a state conversion is related to the valence band splitting by local elastic strain. The conversion is studied here for heavy holes localized at shallow and deep acceptors in silicon quantum wells.Comment: 4 pages, 2 figure

Numerical adiabatic potentials of orthorhombic Jahn-Teller effects retrieved from ultrasound attenuation experiments. Application to the SrF2:Cr crystal

A methodology is worked out to retrieve the numerical values of all the main parameters of the six-dimensional adiabatic potential energy surface (APES) of a polyatomic system with a quadratic T-term Jahn-Teller effect (JTE) from ultrasound experiments. The method is based on a verified assumption that ultrasound attenuation and speed encounter anomalies when the direction of propa- gation and polarization of its wave of strain coincides with the characteristic directions of symmetry breaking in the JTE. For the SrF2:Cr crystal, employed as a basic example, we observed anomaly peaks in the temperature dependence of attenuation of ultrasound at frequencies of 50-160 MHz in the temperature interval of 40-60 K for the wave propagating along the [110] direction, for both the longitudinal and shear modes, the latter with two polarizations along the [001] and [110] axes, respectively. We show that these anomalies are due to the ultrasound relaxation by the system of non-interacting Cr2+ JT centers with orthorhombic local distortions. The interpretation of the ex- perimental findings is based on the T2g (eg +t2g) JTE problem including the linear and quadratic terms of vibronic interactions in the Hamiltonian and the same-symmetry modes reduced to one interaction mode. Combining the experimental results with a theoretical analysis we show that on the complicated six-dimensional APES of this system with three tetragonal, four trigonal, and six orthorhombic extrema points, the latter are global minima, while the former are saddle points, and we estimate numerically all the main parameters of this surface, including the linear and quadratic vibronic coupling constants, the primary force constants, the coordinates of all the extrema points and their energies, the energy barrier between the orthorhombic minima, and the tunneling splitting of the ground vibrational states.Comment: 8 pages, 3 figure

Magnetoresistance in semiconductor structures with hopping conductivity: effects of random potential and generalization for the case of acceptor states

We reconsider the theory of magnetoresistance in hopping semiconductors. First, we have shown that the random potential of the background impurities affects significantly preexponential factor of the tunneling amplitude which becomes to be a short-range one in contrast to the long-range one for purely Coulomb hopping centers. This factor to some extent suppresses the negative interference magnetoresistance and can lead to its decrease with temperature decrease which is in agreement with earlier experimental observations. We have also extended the theoretical models of positive spin magnetoresistance, in particular, related to a presence of doubly occupied states (corresponding to the upper Hubbard band) to the case of acceptor states in 2D structures. We have shown that this mechanism can dominate over classical wave-shrinkage magnetoresistance at low temperatures. Our results are in semi-quantitative agreement with experimental data.Comment: 19 pages, 3 figure

Optical orientation of spins in GaAs:Mn/AlGaAs quantum wells via impurity-to-band excitation

The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarization by means of the optical orientation via the impurity-to-band excitation and observe a sign inversion of the luminescence polarization depending on the pump power. The g factor of a hole localized on the Mn acceptor in the quantum well was also found to be considerably modified from its bulk value due to the quantum confinement effect. This finding shows the importance of the local environment on magnetic properties of the dopants in semiconductor nanostructures

Non-linear emission spectra of quantum dots strongly coupled to photonic mode

A theory of optical emission of quantum dot arrays in quantum microcavities is developed. The regime of the strong coupling between the quantum dots and photonic mode of the cavity is considered. The quantum dots are modeled as two-level systems. In the low pumping (linear) regime the emission spectra are mainly determined by the superradiant mode where the effective dipoles of the dots oscillate in phase. In the non-linear regime the superradiant mode is destroyed and the emission spectra are sensitive to the parity of quantum dot number. Further increase of the pumping results in the line width narrowing being an evidence of the lasing regime.Comment: 11 pages, 6 figure

Dephasing and interwell transitions in double quantum well heterostructures

The interference quantum correction to the conductivity in the gated double quantum well Al$_x$Ga$_{1-x}$As/GaAs/Al$_x$Ga$_{1-x}$As structures is studied experimentally. The consistent analysis of the interference induced positive magnetoconductivity allows us to find the interwell transition time $\tau_{12}$ and the electron dephasing time $\tau_\phi$. It has been obtained that $\tau_{12}^{-1}$ resonantly depends on the difference between the electron densities in the wells as predicted theoretically. The dephasing times have been determined under the conditions when one and both quantum wells are occupied. The surprising result is that the $\tau_\phi$ value in the one well does not depend on the occupation of the other one.Comment: 7 pages, 8 figure

Temperature dependence of D'yakonov-Perel' spin relaxation in zinc blende semiconductor quantum structures

The D'yakonov-Perel' mechanism, intimately related to the spin splitting of the electronic states, usually dominates the spin relaxation in zinc blende semiconductor quantum structures. Previously it has been formulated for the two limiting cases of low and high temperatures. Here we extend the theory to give an accurate description of the intermediate regime which is often relevant for room temperature experiments. Employing the self-consistent multiband envelope function approach, we determine the spin splitting of electron subbands in n-(001) zinc blende semiconductor quantum structures. Using these results we calculate spin relaxation rates as a function of temperature and obtain excellent agreement with experimental data.Comment: 9 pages, 4 figure