Analysis of Beam Deflection Measurements in the Presence of Linear Absorption

We develop a series of analytical approximations allowing for rapid extraction of the nonlinear parameters from beam deflection measurements. We then apply these approximations to the analysis of cadmium silicon phosphide and compare the results against previously published parameter extraction methods and find good agreement for typical experimental conditions

Intrinsic Point Defects (Vacancies and Antisites) in CdGeP\u3csub\u3e2\u3c/sub\u3e Crystals

Cadmium germanium diphosphide (CdGeP2) crystals, with versatile terahertz-generating properties, belong to the chalcopyrite family of nonlinear optical materials. Other widely investigated members of this family are ZnGeP2 and CdSiP2. The room-temperature absorption edge of CdGeP2 is near 1.72 eV (720 nm). Cadmium vacancies, phosphorous vacancies, and germanium-on-cadmium antisites are present in as-grown CdGeP2 crystals. These unintentional intrinsic point defects are best studied below room temperature with electron paramagnetic resonance (EPR) and optical absorption. Prior to exposure to light, the defects are in charge states that have no unpaired spins. Illuminating a CdGeP2 crystal with 700 or 850 nm light while being held below 120 K produces singly ionized acceptors (VCd−) and singly ionized donors (GeCd+), as electrons move from VCd2− vacancies to GeCd2+ antisites. These defects become thermally unstable and return to their doubly ionized charge states in the 150–190 K range. In contrast, neutral phosphorous vacancies (VP0) are only produced with near-band-edge light when the crystal is held near or below 18 K. The VP0 donors are unstable at these lower temperatures and return to the singly ionized VP+ charge state when the light is removed. Spin-Hamiltonian parameters for the VCd− acceptors and VP0 donors are extracted from the angular dependence of their EPR spectra. Exposure at low-temperature to near-band-edge light also introduces broad optical absorption bands peaking near 756 and 1050 nm. A consistent picture of intrinsic defects in II-IV-P2 chalcopyrites emerges when the present CdGeP2 results are combined with earlier results from ZnGeP2, ZnSiP2, and CdSiP2

Deep Selenium Donors in ZnGeP\u3csub\u3e2\u3c/sub\u3e Crystals: An Electron Paramagnetic Resonance Study of a Nonlinear Optical Material

Zinc germanium diphosphide (ZnGeP2) is a ternary semiconductor best known for its nonlinear optical properties. A primary application is optical parametric oscillators operating in the mid-infrared region. Controlled donor doping provides a method to minimize the acceptor-related absorption bands that limit the output power of these devices. In the present study, a ZnGeP2 crystal is doped with selenium during growth. Selenium substitutes for phosphorus and serves as a deep donor. Significant concentrations of native defects (zinc vacancies, germanium-on-zinc antisites, and phosphorous vacancies) are also present in the crystal. Electron paramagnetic resonance (EPR) is used to establish the atomic-level model for the neutral charge state of the selenium donor. The S = 1/2 signal from the neutral donors is produced at 6 K by illuminating with 633 nm light (electrons excited from doubly ionized Zn vacancies convert Se+p donors to Se0p donors). A g matrix, with principal values of 2.088, 2.203, and 1.904, is extracted from the angular dependence of the EPR spectrum. The principal-axis direction associated with the 1.904 principal value is close to a Se–Ge bond. This indicates an asymmetric distribution of unpaired spin density around the selenium ion and thus predicts the deep donor behavior

Electron Paramagnetic Resonance and Optical Absorption Study of Acceptors in CdSiP\u3csub\u3e2\u3c/sub\u3e Crystals

Cadmium silicon diphosphide (CdSiP2) is a nonlinear material often used in optical parametric oscillators (OPOs) to produce tunable laser output in the mid-infrared. Absorption bands associated with donors and acceptors may overlap the pump wavelength and adversely affect the performance of these OPOs. In the present investigation, electron paramagnetic resonance (EPR) is used to identify two unintentionally present acceptors in large CdSiP2 crystals. These are an intrinsic silicon-on-phosphorus antisite and a copper impurity substituting for cadmium. When exposed to 633 µm laser light at temperatures near or below 80 K, they convert to their neutral paramagnetic charge states (Si0P and Cu0Cd) and can be monitored with EPR. The corresponding donor serving as the electron trap is the silicon-on-cadmium antisite (Si2+Cd before illumination and Si+Cd after illumination). Removing the 633 µm light and warming the crystal above 90 K quickly destroys the EPR signals from both acceptors and the associated donor. Broad optical absorption bands peaking near 0.8 and 1.4 μm are also produced at low temperature by the 633 µm light. These absorption bands are associated with the Si0P and Cu0Cd acceptors

Optically Active Selenium Vacancies in BaGa\u3csub\u3e4\u3c/sub\u3eSe\u3csub\u3e7\u3c/sub\u3e Crystals

Barium gallium selenide (BaGa4Se7) is a recently developed nonlinear optical material with a transmission window extending from 470 nm to 17 μm. A primary application of these crystals is the production of tunable mid-infrared laser beams via optical parametric oscillation. Unintentional point defects, such as selenium vacancies, cation vacancies (barium and/or gallium), and trace amounts of transition-metal ions, are present in BaGa4Se7 crystals and may adversely affect device performance. Electron paramagnetic resonance (EPR) and optical absorption are used to identify and characterize these defects. Five distinct EPR spectra, each representing an electron trapped at a selenium vacancy, are observed at low temperature (there are seven crystallographically inequivalent selenium sites in the crystal). One spectrum is stable at room temperature and is present before illumination. The other four are produced at lower temperatures with 532 nm laser light and are thermally unstable at room temperature. Each S = 1/2 singly ionized selenium vacancy has a large, nearly isotropic, hyperfine interaction with 69Ga and 71Ga nuclei at one neighboring Ga site. A significant portion of the unpaired spin resides in a 4s orbital on this adjacent Ga ion and gives principal values of the hyperfine matrices in the 3350–6400 MHz range. Broad photoinduced optical absorption bands in the visible and near-infrared are assigned to the selenium vacancies

Residual Optical Absorption from Native Defects in CdSiP\u3csub\u3e2\u3c/sub\u3e Crystals

CdSiP2 crystals are used in optical parametric oscillators to produce tunable output in the mid-infrared. As expected, the performance of the OPOs is adversely affected by residual optical absorption from native defects that are unintentionally present in the crystals. Electron paramagnetic resonance (EPR) identifies these native defects. Singly ionized silicon vacancies (V-Si) are responsible for broad optical absorption bands peaking near 800, 1033, and 1907 nm. A fourth absorption band, peaking near 630 nm, does not involve silicon vacancies. Exposure to 1064 nm light when the temperature of the CdSiP2 crystal is near 80K converts V-Si acceptors to their neutral and doubly ionized charge states (V0-Si and V2-Si , respectively) and greatly reduces the intensities of the three absorption bands. Subsequent warming to room temperature restores the singly ionized charge state of the silicon vacancies and brings back the absorption bands. Transitions responsible for the absorption bands are identified, and a mechanism that allows 1064 nm light to remove the singly ionized charge state of the silicon vacancies is proposed

Nonlinear Optical Measurements of CdSiP\u3csub\u3e2\u3c/sub\u3e at Near and Mid-infrared Wavelengths

We measure the birefringence of the nonlinear optical (NLO) properties of cadmium silicon phosphide via the Z-scan technique at near and mid-infrared wavelengths. We discuss the implications of the NLO properties on optical parametric amplifier performance. We find that the nonlinear absorption does reduce the conversion efficiency, while the nonlinear refraction has a negligible effect

Improvement of p-Type AlGaN Conductivity with an Alternating Mg-Doped/Un-Doped AlGaN Layer Structure

Using molecular beam epitaxy, we prepared seven p-type AlGaN samples of ~25% in Al content, including six samples with Mg-doped/un-doped AlGaN alternating-layer structures of different layer-thickness combinations, for comparing their p-type performances. Lower sheet resistance and higher effective hole mobility are obtained in a layer-structured sample, when compared with the reference sample of uniform Mg doping. The improved p-type performance in a layer-structured sample is attributed to the diffusion of holes generated in an Mg-doped layer into the neighboring un-doped layers, in which hole mobility is significantly higher because of weak ionized impurity scattering. Among the layer-structured samples, that of 6/4 nm in Mg-doped/un-doped thickness results in the lowest sheet resistance (the highest effective hole mobility), which is 4.83 times lower (4.57 times higher) when compared with the sample of uniform doping. The effects of the Mg-doped/un-doped layer structure on p-type performance in AlGaN and GaN are compared