Nano tracks in fullerene film by dense electronic excitations

In the present work, we investigate the formation of nano tracks by cluster and mono-atomic ion beams in the fullerene (C60) thin films by High Resolution Transmission Electron Microscopy (HRTEM). The fullerene films on carbon coated grids were irradiated by 30 MeV C60 cluster beam and 120 MeV Au mono-atomic beams at normal and grazing angle to the incident ion beams. The studies show that the cluster beam creates latent tracks of an average diameter of around 20 nm. The formation of large size nano tracks by cluster beam is attributed to the deposition of large electronic energy density as compared to mono-atomic beams.Comment: Under revision. Applied Surface Science (2014

Shape deformation of embedded metal nanoparticles by swift heavy ion irradiation

an invited paper of SHIM 2008Swift heavy ions (SHI) induce high densities of electronic excitations in narrow cylindrical volumes around their path. These excitations have been used to manipulate the size and shape of noble metal nanoparticles embedded in silica matrix. Films containing noble metal nanoparticles were prepared by magnetron co-sputtering techniques. SHI irradiation of films resulted in the formation of prolate Ag nanoparticles with major axis along the ion beam direction. It has been observed that the nanoparticles smaller than the track size dissolve and other grow at their expense, while the nanoparticles larger than track size show deformation with major axis along the ion beam direction. The aspect ratio of elongated nanoparticles is found to be the function of electronic energy loss and ion fluence. Present report will focus on the role of size and volume fraction on the shape deformation of noble metal nanoparticles by electronic excitation induced by SHI irradiation. The detailed results concerning irradiation effects in silica-metal composites for dissolution, growth and shape deformation will be discussed in the framework of thermal spike model

Modification and Characterisation of Materials by Swift Heavy Ions

Swift heavy ions (SHI) available with 15 million Volt Pelletron accelerator at Inter University Accelerator Centre (IUAC) Delhi, formerly known as Nuclear Science Centre, (NSC), provide a unique opportunity to researchers for accelerator based materials science research. The major research areas can be broadly categorised as electronic sputtering, interface modifications, synthesis and modification of nanostructures, phase transitions and ion beam-induced epitaxial crystallisation. In, general, SHI irradiation based-materials may not be economically feasible, still it could be of interest for very specific cases in defence and space research. The paper gives a glimpse of the current research activities in materials science with SHIs, at IUAC.Defence Science Journal, 2009, 59(4), pp.401-412, DOI:http://dx.doi.org/10.14429/dsj.59.154

Dielectric response of makrofol-KG polycarbonate irradiated with 145 MeV Ne6+ and 100 MeV Si8+ ions

The passage of heavy ions in a track detector polymeric material produces lattice deformations. These deformations may be in the form of latent tracks or may vanish by self annealing in time. Heavy ion irradiation produces modifications in polymers in their relevant electrical, chemical and optical properties in the form of rearrangement of bonding, cross-linking, chain scission, formation of carbon rich clusters and changes in dielectric properties etc. Modification depends on the ion, its energy and fluence and the polymeric material. In the present work, a study of the dielectric response of pristine and heavy ion irradiated Makrofol-KG polycarbonate is carried out. 40 μm thick Makrofol-KG polycarbonate films were irradiated to various fluences with Si8+ ions of 100 MeV energy from Pelletron at Inter University Accelerator Centre (IUAC), New Delhi and Ne6+ ions of 145 MeV from Variable Energy Cyclotron Centre, Kolkata. On irradiation with heavy ions dielectric constant ( ) decreases with frequency where increases with fluence for both the ions. Variation of loss factor (tan ) with frequency for pristine and irradiated with Si ions reveals that tan increases as the frequency increases. Tan also increases with fluence. While Ne irradiated samples tan shows slight variation with frequency as well as with fluence. Tan has positive values indicating the dominance of inductive behavior.Author Affiliation: Rajesh Kumar, S Asad Ali, Udayan De, D K Avasthi and Rajendra Prasad 1.Department of Applied Physics, Z H College of Engineering & Technology, Aligarh Muslim University, Aligarh-202 002, Uttar Pradesh, India 2.Variable Energy Cyclotron Centre, 1/AF, Bidhan Nagar, Kolkata-700 064, India 3.Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110 067, India E-mail : [email protected] of Applied Physics, Z H College of Engineering & Technology, Aligarh Muslim University, Aligarh-202 002, Uttar Pradesh, India Variable Energy Cyclotron Centre, 1/AF, Bidhan Nagar, Kolkata-700 064, India Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110 067, Indi

Swift Heavy Ion-induced Mixing

In this paper, the possible swift heavy ion (SHI)-matter interaction processes and their applicability to SHI-induced mixing have been discussed. The assumption that the SHI mixing is a consequence of a transient molten state diffusion has been brought forward. The following experimental evidences have been presented to verify the concepts developed for SHI mixing process: (i) Evidence of high temperature conditions in materials produced by SHIs via the study of SHI mixing in an Fe/Fe57/Si system; (ii) Verification of the hypothesis of transient molten state diffusion via a detailed study on Fe/Si system; (iii) The role played by a thermodynamical parameter, viz., interfacial free energy via a SHI mixing study on an Fe/Si multilayer; (iv) Demonstration of the occurrence of the process in an exclusively thermal-spike determined metal/metal system, viz., Fe/Ni multilayer; and (v) synthesis of technologically important SiC phases at room temperature via SHI mixing of C-allotrope/Si multilayers.Defence Science Journal, 2009, 59(4), pp.425-435, DOI:http://dx.doi.org/10.14429/dsj.59.154

Study of optical band gap and carbon cluster sizes formed in 100 MeV Si8+ and 145 MeV Ne6+ ions irradiated polypropylene polymer

A wide variety of material modifications in polymers have been studied by using ion irradiation techniques. Extensive research has focused on to Swift Heavy Ions (MeV's energy), probably because of good controllability and the large penetration length in polymers. High energy ion irradiation tends to damage polymers significantly by electronic excitation and ionization. It may result into the creation of latent tracks and can also cause formation of radicals such as ablation, sputtering, chain scission and intermolecular cross-linking, creation of triple bonds and unsaturated bonds and loss volatile fragments. Polypropylene polymer films of thickness 50 μm were irradiated to the fluences of 1 × 1010, 3 × 1010, 1 × 1011, 3 × 1011, 6 × 1011 and 1 × 1012 ions/cm2 with Si8+ ions of 100 MeV energy from Pelletron accelerator at Inter University Accelerator Centre (IUAC), New Delhi and Ne6+ ions of 145 MeV to the fluences of 108, 1010, 1011, 1012 and 1013 ions/cm3 from Variable Energy Cyclotron Centre, Kolkata. Optical modifications were characterized by UV towards the red end of the spectrum with the increase of the fluence. Value of optical band gap Eg shows a decreasing trend with ion fluence irradiated with both kinds of ions. Cluster size N, the number of carbon atoms per conjugation length increases with increasing ion dose. Cluster size also increases with the increase of electronic stopping power.Rajesh Kumar1*, S Asad Ali1, A. H. Naqvi1, H. S. Virk2, Udayan De3, D K Avasthi4 and Rajendra Prasad1 1Department of Applied Physics, Z. H. College of Engineering & Technology, Aligarh Muslim University, Aligarh-202 002, Uttar Pradesh, India 2360 Sector-71, SAS Nagar (Mohali), Chandigarh-160 071, Punjab, India 3Variable Energy Cyclotron Centre, 1/AF, Bidhan Nagar, Kolkata-700 064, India 4Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110 067, India E-mail : [email protected] of Applied Physics, Z. H. College of Engineering & Technology, Aligarh Muslim University, Aligarh-202 002, Uttar Pradesh, India 2360 Sector-71, SAS Nagar (Mohali), Chandigarh-160 071, Punjab, India Variable Energy Cyclotron Centre, 1/AF, Bidhan Nagar, Kolkata-700 064, India Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110 067, Indi