Thermal stability of amorphous LaScO3 films on silicon

The thermal stability of amorphous LaScO3 thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained < 0.1 A of SiO2 at the interface between LaScO3 and silicon. XRD studies showed that the films remained amorphous after annealing in N-2 at 700 degrees C, although HRTEM showed structural order on an similar to 1 nm length scale even in the as-deposited films. By 800 degrees C, the LaScO3 had started to crystallize and formed a similar to 5 nm thick Sc-deficient interlayer between it and silicon. (c) 2006 American Institute of Physics