Terawatt-scale photovoltaics: Transform global energy

Solar energy has the potential to play a central role in the future global energy system because of the scale of the solar resource, its predictability, and its ubiquitous nature. Global installed solar photovoltaic (PV) capacity exceeded 500 GW at the end of 2018, and an estimated additional 500 GW of PV capacity is projected to be installed by 2022–2023, bringing us into the era of TW-scale PV. Given the speed of change in the PV industry, both in terms of continued dramatic cost decreases and manufacturing-scale increases, the growth toward TW-scale PV has caught many observers, including many of us (1), by surprise. Two years ago, we focused on the challenges of achieving 3 to 10 TW of PV by 2030. Here, we envision a future with ∼10 TW of PV by 2030 and 30 to 70 TW by 2050, providing a majority of global energy. PV would be not just a key contributor to electricity generation but also a central contributor to all segments of the global energy system. We discuss ramifications and challenges for complementary technologies (e.g., energy storage, power to gas/liquid fuels/chemicals, grid integration, and multiple sector electrification) and summarize what is needed in research in PV performance, reliability, manufacturing, and recycling

Wafer bonded epitaxial templates for silicon heterostructures

A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated

Wafer bonded virtual substrate and method for forming the same

A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material

Terawatt-scale photovoltaics: Transform global energy

Solar energy has the potential to play a central role in the future global energy system because of the scale of the solar resource, its predictability, and its ubiquitous nature. Global installed solar photovoltaic (PV) capacity exceeded 500 GW at the end of 2018, and an estimated additional 500 GW of PV capacity is projected to be installed by 2022–2023, bringing us into the era of TW-scale PV. Given the speed of change in the PV industry, both in terms of continued dramatic cost decreases and manufacturing-scale increases, the growth toward TW-scale PV has caught many observers, including many of us (1), by surprise. Two years ago, we focused on the challenges of achieving 3 to 10 TW of PV by 2030. Here, we envision a future with ∼10 TW of PV by 2030 and 30 to 70 TW by 2050, providing a majority of global energy. PV would be not just a key contributor to electricity generation but also a central contributor to all segments of the global energy system. We discuss ramifications and challenges for complementary technologies (e.g., energy storage, power to gas/liquid fuels/chemicals, grid integration, and multiple sector electrification) and summarize what is needed in research in PV performance, reliability, manufacturing, and recycling

Controlling the dopant profile for SRH suppression at low current densities in λ ≈ 1330 nm GaInAsP light-emitting diodes

The quantum efficiency of double hetero-junction light-emitting diodes (LEDs) can be significantly enhanced at low current density by tailoring the spatial profile of dopants to suppress Shockley–Read–Hall recombination. To demonstrate this effect, we model, design, grow, fabricate, and test a GaInAsP LED (λ≈ 1330 nm) with an unconventional dopant profile. Compared against that of our control design, which is a conventional n⁺-n-p⁺ double hetero-junction LED, the dopant profile near the n-p⁺ hetero-structure of the design displaces the built-in electric field in such a way that the J₀₂ space charge recombination current is suppressed. The design principle generalizes to other material systems and could be applicable to efforts to observe and exploit electro-luminescent refrigeration at practical power densities

A Monolithically Integrated, Intrinsically Safe, 10% Efficient, Solar-Driven Water-Splitting System Based on Active, Stable Earth-Abundant Electrocatalysts in Conjunction with Tandem III-V Light Absorbers Protected by Amorphous TiO_2 Films

A monolithically integrated device consisting of a tandem-junction GaAs/InGaP photoanode coated by an amorphous TiO_2 stabilization layer, in conjunction with Ni-based, earth-abundant active electrocatalysts for the hydrogen-evolution and oxygen-evolution reactions, was used to effect unassisted, solar-driven water splitting in 1.0 M KOH(aq). When connected to a Ni-Mo-coated counterelectrode in a two-electrode cell configuration, the TiO_2-protected III-V tandem device exhibited a solar-to-hydrogen conversion efficiency, η_(STH), of 10.5% under 1 sun illumination, with stable performance for > 40 h of continuous operation at an efficiency of η_(STH) >10%. The protected tandem device also formed the basis for a monolithically integrated, intrinsically safe solar-hydrogen prototype system (1 cm^2) driven by a NiMo/GaAs/InGaP/TiO_2/Ni structure. The intrinsically safe system exhibited a hydrogen production rate of 0.81 μL s^(-1) and a solar-to-hydrogen conversion efficiency of 8.6% under 1 sun illumination in 1.0 M KOH(aq), with minimal product gas crossover while allowing for beneficial collection of separate streams of H_2(g) and O_2(g)

Submicron Structures Fabrication and Research

Contains reports on thirteen research projects.Joint Services Electronics Program (Contract DAAG29-83-K-0003)U.S. Navy - Office of Naval Research (Contract N00014-79-C-0908)National Science Foundation (Grant ECS82-05701)I.B.M. (PO No. 90305-QPSA-559)U.S. Department of Energy (Contract DE-AC02-82-ER13019)Lawrence Livermore Laboratory (Contract 2069209

Resonant Thermoelectric Nanophotonics

Photodetectors are typically based either on photocurrent generation from electron–hole pairs in semiconductor structures or on bolometry for wavelengths that are below bandgap absorption. In both cases, resonant plasmonic and nanophotonic structures have been successfully used to enhance performance. Here, we show subwavelength thermoelectric nanostructures designed for resonant spectrally selective absorption, which creates large localized temperature gradients even with unfocused, spatially uniform illumination to generate a thermoelectric voltage. We show that such structures are tunable and are capable of wavelength-specific detection, with an input power responsivity of up to 38 V W^(–1), referenced to incident illumination, and bandwidth of nearly 3 kHz. This is obtained by combining resonant absorption and thermoelectric junctions within a single suspended membrane nanostructure, yielding a bandgap-independent photodetection mechanism. We report results for both bismuth telluride/antimony telluride and chromel/alumel structures as examples of a potentially broader class of resonant nanophotonic thermoelectric materials for optoelectronic applications such as non-bandgap-limited hyperspectral and broadband photodetectors