Dirac parameters and topological phase diagram of Pb1-xSnxSe from magneto-spectroscopy

Pb1-xSnxSe hosts 3D massive Dirac fermions across the entire composition range for which the crystal structure is cubic. In this work, we present a comprehensive experimental mapping of the 3D band structure parameters of Pb1-xSnxSe as a function of composition and temperature. We cover a parameter space spanning the band inversion that yields its topological crystalline insulator phase. A non-closure of the energy gap is evidenced in the vicinity of this phase transition. Using magnetooptical Landau level spectroscopy, we determine the energy gap, Dirac velocity, anisotropy factor and topological character of Pb1-xSnxSe epilayers grown by molecular beam epitaxy on BaF2 (111). Our results are evidence that Pb1-xSnxSe is a model system to study topological phases and the nature of the phase transition.Comment: Submitte

A note on Gauge Theories Coupled to Gravity

We analyze the bound on gauge couplings $e\geq m/m_p$, suggested by Arkani-Hamed et.al. We show this bound can be derived from simple semi-classical considerations and holds in spacetime dimensions greater than or equal to four. Non abelian gauge symmetries seem to satisfy the bound in a trivial manner. We comment on the case of discrete symmetries and close by performing some checks for the bound in higher dimensions in the context of string theory.Comment: 15 pages, 1 figure, Late

Intensity correlations and mesoscopic fluctuations of diffusing photons in cold atoms

We study the angular correlation function of speckle patterns that result from multiple scattering of photons by cold atomic clouds. We show that this correlation function becomes larger than the value given by Rayleigh law for classical scatterers. These large intensity fluctuations constitute a new mesoscopic interference effect specific to atom-photon interactions, that could not be observed in other systems such as weakly disordered metals. We provide a complete description of this behavior and expressions that allow for a quantitative comparison with experiments.Comment: 4 pages, 2 figure

Massive and massless Dirac fermions in Pb1-xSnxTe topological crystalline insulator probed by magneto-optical absorption

Dirac fermions in condensed matter physics hold great promise for novel fundamental physics, quantum devices and data storage applications. IV-VI semiconductors, in the inverted regime, have been recently shown to exhibit massless topological surface Dirac fermions protected by crystalline symmetry, as well as massive bulk Dirac fermions. Under a strong magnetic field (B), both surface and bulk states are quantized into Landau levels that disperse as B^1/2, and are thus difficult to distinguish. In this work, magneto-optical absorption is used to probe the Landau levels of high mobility Bi-doped Pb0.54Sn0.46Te topological crystalline insulator (111)-oriented films. The high mobility achieved in these thin film structures allows us to probe and distinguish the Landau levels of both surface and bulk Dirac fermions and extract valuable quantitative information about their physical properties. This work paves the way for future magnetooptical and electronic transport experiments aimed at manipulating the band topology of such materials.Comment: supplementary material included, to appear in Scientific Report

Antiferromagnetic phase of the gapless semiconductor V3Al

Discovering new antiferromagnetic compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The antiferromagnetic gapless semiconducting D03 phase of V3Al was successfully synthesized via arc-melting and annealing. The antiferromagnetic properties were established through synchrotron measurements of the atom-specific magnetic moments, where the magnetic dichroism reveals large and oppositely-oriented moments on individual V atoms. Density functional theory calculations confirmed the stability of a type G antiferromagnetism involving only two-third of the V atoms, while the remaining V atoms are nonmagnetic. Magnetization, x-ray diffraction and transport measurements also support the antiferromagnetism. This archetypal gapless semiconductor may be considered as a cornerstone for future spintronic devices containing antiferromagnetic elements.Comment: Accepted to Physics Review B on 02/23/1