2 research outputs found
Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes
We
have examined the carrier injection process of axial nanowire
light-emitting diode (LED) structures and identified that poor carrier
injection efficiency, due to the large surface recombination, is the
primary cause for the extremely low output power of phosphor-free
nanowire white LEDs. We have further developed InGaN/GaN/AlGaN dot-in-a-wire
core–shell white LEDs on Si substrate, which can break the
carrier injection efficiency bottleneck, leading to a massive enhancement
in the output power. At room temperature, the devices can exhibit
an output power of ∼1.5 mW, which is more than 2 orders of
magnitude stronger than nanowire LEDs without shell coverage. Additionally,
such phosphor-free nanowire white LEDs can deliver an unprecedentedly
high color rendering index of ∼92–98 in both the warm
and cool white regions, with the color rendering capability approaching
that of an ideal light source, i.e. a blackbody