EC70-842 Dry Edible Bean Production Costs and Returns in Scotts Bluff County, Nebraska 1967

Extension Circular 70-842: Dry edible bean-production costs and returns-in Scotts Bluff country, Nebraska in 1967; characteristics of the industry, procedure for estimating production costs, costs of production, net returns, and break-even yields

Testing the “Black Code”: does having white close friends elicit identity denial and decreased empathy from black ingroup members?

The present experiment examined identity denial and reduced empathy for ingroup (vs. outgroup) targets as a function of the racial composition of their social networks. Black participants rated ingroup (Black) targets as more weakly racially identified and expressed less empathy for ingroup targets with cross-race close friends vs. same-race close friends or no friends. Furthermore, the effect of social network composition on empathy was mediated by perceived racial identity. These findings were limited to the ingroup target. Although the outgroup (White) target was rated as more weakly identified when shown with cross-race close friends vs. same-race close friends or no friends, neither social network composition nor perceived racial identity predicted empathy for the outgroup target. These findings extend previous research on identity denial and suggest that, for Blacks, closely associating with Whites undermines the usually robust pattern of ingroup empathy

Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance

Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations. This paper investigates the effect of the asymmetric source and drain geometries of surround-gate vertical MOSFETs on the drain leakage currents in the OFF-state region of operation. Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for transistors connected in the drain-on-top and drain-on-bottom configurations. Asymmetric leakage currents are seen when the source and drain terminals are interchanged, with the GIDL being higher in the drain-on-bottom configuration and the body leakage being higher in the drain-on-top configuration. Band-to-band tunneling is identified as the dominant leakage mechanism for both the GIDL and body leakage from electrical measurements at temperatures ranging from ?50 to 200?C. The asymmetric body leakage is explained by a difference in body doping concentration at the top and bottom drain–body junctions due to the use of a p-well ion implantation. The asymmetric GIDL is explained by the difference in gate oxide thickness on the vertical (110) pillar sidewalls and the horizontal (100) wafer surface

Growth of Carbon Nanotubes on HfO2 towards Highly Sensitive Nano-Sensors

Carbon nanotube (CNT) growth on HfO2 is reported for the first time. The process uses a combination of Ge and Fe nanoparticles and achieves an increase in CNT density from 0.15 to 6.2 mm length/mm2 compared with Fe nanoparticles alone. The synthesized CNTs are assessed by the fabrication of back-gate CNT field-effect transistors with Al source/drain contacts for nano-sensor applications. The devices exhibit excellent p-type behavior with an Ion=Ioff ratio of 105 and a steep sub-threshold slope of 130 mV/dec

Metal-catalyst-free growth of carbon nanotubes and their application in field-effect transistors

The metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the application in field-effect transistors (FETs) is demonstrated. The CNT growth process used a 3-nm-thick Ge layer on SiO2 that was subsequently annealed to produce Ge nanoparticles. Raman measurements show the presence of radial breathing mode peaks and the absence of the disorder induced D-band, indicating single walled CNTs with a low defect density. The synthesized CNTs are used to fabricate CNTFETs and the best device has a state-of-the-art on/off current ratio of 3×108 and a steep sub-threshold slope of 110 mV/dec

Characterisation of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's

An electrical method is applied to SiGe and SiGeC HBTs to extract the bandgap narrowing in the base layer and to characterise the presence of parasitic energy barriers in the conduction band, arising from transient enhanced boron diffusion from the SiGe layer. It is shown that a background carbon concentration with the base of approximately 1E20cm-3 eliminates parasitic energy barriers at the C/B junction and hence shows that transient enhanced diffusion of boron from the base has been completely suppressed

Evaluating A State Opioid Prescribing Limit and Electronic Medical Record Alert

Because long-term opioid use has been linked to the length and strength of an initial prescription, 33 states, Medicare, and some private insurers have set limits on the duration of new opioid prescriptions. In May 2017, New Jersey implemented a statewide 5-day limit on new opioid prescriptions and Penn Medicine implemented an Electronic Medical Record (EMR) alert to notify prescribers when a prescription exceeded the limit and provide compliant prescription orders. This study compared outcomes in Penn Medicine outpatient practices in New Jersey with its practices in Pennsylvania not subject to the law. Outcomes included total opioid dose and number of tablets per prescription as well as rates of prescription refills, health care visits, and telephone calls within 30 days to account for potential unintended consequences