Entropy and isokinetic temperature in fast ion transport

ABSTRACT: Ion transport in crystalline solids is an essential process for many electrochemical energy converters such as solid-state batteries and fuel cells. Empirical data have shown that ion transport in crystal lattices obeys the Meyer-Neldel Rule (MNR). For similar, closely related materials, when the material properties are changed by doping or by strain, the measured ionic conductivities showing different activation energies intersect on the Arrhenius plot, at an isokinetic temperature. Therefore, the isokinetic temperature is a critical parameter for improving the ionic conductivity. However, a comprehensive understanding of the fundamental mechanism of MNR in ion transport is lacking. Here the physical significance and applicability of MNR is discussed, that is, of activation entropy-enthalpy compensation, in crystalline fast ionic conductors, and the methods for determining the isokinetic temperature. Lattice vibrations provide the excitation energy for the ions to overcome the activation barrier. The multi-excitation entropy model suggests that isokinetic temperature can be tuned by modulating the excitation phonon frequency. The relationship between isokinetic temperature and isokinetic prefactor can provide information concerning conductivity mechanisms. The need to effectively determine the isokinetic temperature for accelerating the design of new fast ionic conductors with high conductivity is highlighted

Laser-chemical vapor deposition of W Schottky contacts on GaAs\ud using WF6 and SiH4

Reports on the deposition of tungsten on gallium arsenide (GaAs) using a low-temperature laser-chemical vapor deposition process. Induction of metallic W formation from a gas mixture; Columnar structure shown by scanning electron microscopy of the W films; Schottky diodes obtained during a laser based resistless projection patterning process on GaAs

Atomic Energy Commission Report AECU-4553

A method is described for the production of single‐crystal films of copper at temperatures as low as −40°C. This method utilizes the epitaxy of copper on rock salt. A thin layer of copper is evaporated on a single crystal of salt at 350°C. Then a thick layer is evaporated at the low temperature. Films grown by this method have been examined using x‐ray and etching techniques. It was found that some of these films had single‐crystal regions of 1 mm diameter and larger. These crystallites had [100] directions within 1° to a normal to the film surface