295 research outputs found

    On the solvability of the non-homogeneous potential problem at a corner singularity

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    Vacuum Structure of Two-Dimensional ϕ4\phi^4 Theory on the Orbifold S1/Z2S^{1}/Z_{2}

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    We consider the vacuum structure of two-dimensional ϕ4\phi^4 theory on S1/Z2S^{1}/Z_{2} both in the bosonic and the supersymmetric cases. When the size of the orbifold is varied, a phase transition occurs at Lc=2π/mL_{c}=2\pi/m, where mm is the mass of ϕ\phi. For L<LcL<L_{c}, there is a unique vacuum, while for L>LcL>L_{c}, there are two degenerate vacua. We also obtain the 1-loop quantum corrections around these vacuum solutions, exactly in the case of L<LcL<L_{c} and perturbatively for LL greater than but close to LcL_{c}. Including the fermions we find that the "chiral" zero modes around the fixed points are different for LLcLL_{c}. As for the quantum corrections, the fermionic contributions cancel the singular part of the bosonic contributions at L=0. Then the total quantum correction has a minimum at the critical length LcL_{c}.Comment: Revtex, 15 pages, 3 eps figure

    Effect of the Pauli principle on photoelectron spin transport in p+p^+ GaAs

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    In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a function of distance from a tightly-focussed light excitation spot. Under degeneracy of the electron gas (high concentration, low temperature), a dip at the center of the polarization profile appears with a polarization maximum at a distance of about 2  Όm2 \; \mu m from the center. This counterintuitive result reveals that photoelectron diffusion depends on spin, as a direct consequence of the Pauli principle. This causes a concentration dependence of the spin stiffness while the spin dependence of the mobility is found to be weak in doped material. The various effects which can modify spin transport in a degenerate electron gas under local laser excitation are considered. A comparison of the data with a numerical solution of the coupled diffusion equations reveals that ambipolar coupling with holes increases the steady-state photo-electron density at the excitation spot and therefore the amplitude of the degeneracy-induced polarization dip. Thermoelectric currrents are predicted to depend on spin under degeneracy (spin Soret currents), but these currents are negligible except at very high excitation power where they play a relatively small role. Coulomb spin drag and bandgap renormalization are negligible due to electrostatic screening by the hole gas

    Spin dependent photoelectron tunnelling from GaAs into magnetic Cobalt

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    The spin dependence of the photoelectron tunnel current from free standing GaAs films into out-of- plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, reaches +/- 6% around zero applied tunnel bias and drops to +/- 2% at a bias of -1.6 V applied to the GaAs. This decrease is a result of the drop in the photoelectron spin polarization that results from a reduction in the GaAs surface recombination velocity. The sign of A changes with that of the Cobalt magnetization direction. In contrast, on a (nonmagnetic) Gold film A ~ 0%

    Spin and recombination dynamics of excitons and free electrons in p-type GaAs : effect of carrier density

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    Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly neutral and photoelectrons can either recombine with holes bound to acceptors (e-A0 line) or form excitons which are mostly trapped on neutral acceptors forming the (A0X) complex. It is found that the spin lifetime is shorter for electrons that recombine through the e-A0 transition due to spin relaxation generated by the exchange scattering of free electrons with either trapped or free holes, whereas spin flip processes are less likely to occur once the electron forms with a free hole an exciton bound to a neutral acceptor. An increase of exci- tation power induces a cross-over to a regime where the bimolecular band-to-band (b-b) emission becomes more favorable due to screening of the electron-hole Coulomb interaction and ionization of excitonic complexes and free excitons. Then, the formation of excitons is no longer possible, the carrier recombination lifetime increases and the spin lifetime is found to decrease dramatically with concentration due to fast spin relaxation with free photoholes. In this high density regime, both the electrons that recombine through the e-A0 transition and through the b-b transition have the same spin relaxation time.Comment: 4 pages, 5 figure

    Absence of an intrinsic value for the surface recombination velocity in doped semiconductors

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    A self-consistent expression for the surface recombination velocity SS and the surface Fermi level unpinning energy as a function of light excitation power (PP) is presented for n- and p-type semiconductors doped above the 1016^{16} cm−3^{-3} range. Measurements of SS on p-type GaAs films using a novel polarized microluminescence technique are used to illustrate two limiting cases of the model. For a naturally oxidized surface SS is described by a power law in PP whereas for a passivated surface S−1S^{-1} varies logarithmically with PP. Furthermore, the variation in SS with surface state density and bulk doping level is found to be the result of Fermi level unpinning rather than a change in the intrinsic surface recombination velocity. It is concluded that SS depends on PP throughout the experimentally accessible range of excitation powers and therefore that no instrinsic value can be determined. Previously reported values of SS on a range of semiconducting materials are thus only valid for a specific excitation power.Comment: 10 pages, 7 figure

    Quasi-doubly periodic solutions to a generalized Lame equation

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    We consider the algebraic form of a generalized Lame equation with five free parameters. By introducing a generalization of Jacobi's elliptic functions we transform this equation to a 1-dim time-independent Schroedinger equation with (quasi-doubly) periodic potential. We show that only for a finite set of integral values for the five parameters quasi-doubly periodic eigenfunctions expressible in terms of generalized Jacobi functions exist. For this purpose we also establish a relation to the generalized Ince equation.Comment: 15 pages,1 table, accepted for publication in Journal of Physics

    Operator ordering in Two-dimensional N=1 supersymmetry with curved manifold

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    We investigate an operator ordering problem in two-dimensional N=1 supersymmetric model which consists of n real superfields. There arises an operator ordering problem when the target space is curved. We have to fix the ordering in quantum operator properly to obtain the correct supersymmetry algebra. We demonstrate that the super-Poincar\'{e} algebra fixes the correct operator ordering. We obtain a supercurrent with correct operator ordering and a central extension of supersymmetry algebra.Comment: 7 page

    Kernel functions and B\"acklund transformations for relativistic Calogero-Moser and Toda systems

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    We obtain kernel functions associated with the quantum relativistic Toda systems, both for the periodic version and for the nonperiodic version with its dual. This involves taking limits of previously known results concerning kernel functions for the elliptic and hyperbolic relativistic Calogero-Moser systems. We show that the special kernel functions at issue admit a limit that yields generating functions of B\"acklund transformations for the classical relativistic Calogero-Moser and Toda systems. We also obtain the nonrelativistic counterparts of our results, which tie in with previous results in the literature.Comment: 76 page
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