Observation of a robust and active catalyst for hydrogen evolution under high current densities

Despite the fruitful achievements in the development of hydrogen production catalysts with record-breaking performances, there is still a lack of durable catalysts that could work under large current densities (>1000 mA cm(−2)). Here, we investigated the catalytic behaviors of Sr(2)RuO(4) bulk single crystals. This crystal has demonstrated remarkable activities under the current density of 1000 mA cm(−2), which require overpotentials of 182 and 278 mV in 0.5 M H(2)SO(4) and 1 M KOH electrolytes, respectively. These materials are stable for 56 days of continuous testing at a high current density of above 1000 mA cm(−2) and then under operating temperatures of 70 °C. The in-situ formation of ferromagnetic Ru clusters at the crystal surface is observed, endowing the single-crystal catalyst with low charge transfer resistance and high wettability for rapid gas bubble removal. These experiments exemplify the potential of designing HER catalysts that work under industrial-scale current density

Stacking Variants and Superconductivity in the Bi–O–S System

High-temperature superconductivity has a range of applications from sensors to energy distribution. Recent reports of this phenomenon in compounds containing electronically active BiS₂ layers have the potential to open a new chapter in the field of superconductivity. Here we report the identification and basic properties of two new ternary Bi–O–S compounds, Bi₂OS₂ and Bi₃O₂S₃. The former is non-superconducting; the latter likely explains the superconductivity at <i>T</i>_c = 4.5 K previously reported in “Bi₄O₄S₃”. The superconductivity of Bi₃O₂S₃ is found to be sensitive to the number of Bi₂OS₂-like stacking faults; fewer faults correlate with increases in the Meissner shielding fractions and <i>T</i>_c. Elucidation of the electronic consequences of these stacking faults may be key to the understanding of electronic conductivity and superconductivity which occurs in a nominally valence-precise compound

Stacking Variants and Superconductivity in the Bi–O–S System

High-temperature superconductivity has a range of applications from sensors to energy distribution. Recent reports of this phenomenon in compounds containing electronically active BiS₂ layers have the potential to open a new chapter in the field of superconductivity. Here we report the identification and basic properties of two new ternary Bi–O–S compounds, Bi₂OS₂ and Bi₃O₂S₃. The former is non-superconducting; the latter likely explains the superconductivity at <i>T</i>_c = 4.5 K previously reported in “Bi₄O₄S₃”. The superconductivity of Bi₃O₂S₃ is found to be sensitive to the number of Bi₂OS₂-like stacking faults; fewer faults correlate with increases in the Meissner shielding fractions and <i>T</i>_c. Elucidation of the electronic consequences of these stacking faults may be key to the understanding of electronic conductivity and superconductivity which occurs in a nominally valence-precise compound