1 research outputs found
Coupled and Implicit Relationships of the d‑Band Center of the Magnetic Dopants in Diluted Magnetic Semiconductors and Transition Metal Oxides
Recently,
we have extended the single parameter predictive model
based on the d-band center, <i>d</i><sub><i>c</i>,<i>TM</i></sub>, of the adsorbent transition metal (TM)
atom and proposed a multidescriptor predictive model for the adsorption
and binding properties of catalytic surfaces. In addition to that,
we have also demonstrated that <i>d</i><sub><i>c</i>,<i>TM</i>–<i>dop</i></sub> of TM-dopants
in diluted magnetic semiconductors (DMSs) and transition metal oxides
(TMOs) correlates quite well with the magnetic and other electronic
properties of both DMSs and doped TMOs. In the present work we revisit
the issue of <i>d</i><sub><i>c</i>,<i>TM</i>–<i>dop</i></sub> as a suitable descriptor for magnetic
systems. In particular, we analyze <i>ab initio</i> results
obtained for nine host materials (DMSs and TMOs) (i.e., ZnO, GaN,
GaP, TiO<sub>2</sub>, SnO<sub>2</sub>, Sn<sub>3</sub>N<sub>4</sub>, MoS<sub>2</sub>, ZnS, and CdS) codoped with TM atoms of the whole
3d-series. Our results indicate coupled and implicit correlations
among the various features of the codoped systems, namely, the magnetic
moment of the dopant in a particular host, the dopant’s d-band
center, as well as the p-band center of the host’s anions and
the band gap of the doped system. It is also demonstrated that this
set of features, complimented by an additional set of secondary descriptors
(crystal field and spin–orbit coupling splittings, point group
symmetry of the dopant sites, induced gap states, heterovalency, and
heteroelectronegativity between host and dopant constituent atoms),
could constitute a valuable set of descriptors suitable for developing
statistical predictive theories for a much larger class of magnetic
materials