2 research outputs found
Bilayer Metasurfaces for Dual- and Broadband Optical Antireflection
Optical antireflection has long been
pursued for a wide range of applications, but existing approaches
encounter issues in the performance, bandwidth, and structure complexity,
particularly in the long-wavelength infrared regime. Here we present
the demonstration of bilayer metasurfaces that accomplish dual- and
broadband optical antireflection in the terahertz and mid-infrared
spectral ranges. By simply tailoring the structural geometry and dimensions,
we show that subwavelength metal/dielectric structures enable dramatic
reduction of Fresnel reflection and significant enhancement of transmission
at a substrate surface, operating either at two discrete narrow bands
or over a broad bandwidth up to 28%. We also use a semianalytical
interference model to interpret the obtained results, in which we
find that the dispersion of the constituent structures plays a critical
role in achieving the observed broadband optical antireflection
Conducting Interface in Oxide Homojunction: Understanding of Superior Properties in Black TiO<sub>2</sub>
Black
TiO<sub>2</sub> nanoparticles with a crystalline core and amorphous-shell
structure exhibit superior optoelectronic properties in comparison
with pristine TiO<sub>2</sub>. The fundamental mechanisms underlying
these enhancements, however, remain unclear, largely due to the inherent
complexities and limitations of powder materials. Here, we fabricate
TiO<sub>2</sub> homojunction films consisting of an oxygen-deficient
amorphous layer on top of a highly crystalline layer, to simulate
the structural/functional configuration of black TiO<sub>2</sub> nanoparticles.
Metallic conduction is achieved at the crystalline–amorphous
homointerface via electronic interface reconstruction, which we show
to be the main reason for the enhanced electron transport of black
TiO<sub>2</sub>. This work not only achieves an unprecedented understanding
of black TiO<sub>2</sub> but also provides a new perspective for investigating
carrier generation and transport behavior at oxide interfaces, which
are of tremendous fundamental and technological interest