2D Raman band splitting in graphene: charge screening and lifting of the K-point Kohn anomaly

Pristine graphene encapsulated in hexagonal boron nitride has transport properties rivalling suspended graphene, while being protected from contamination and mechanical damage. For high quality devices, it is important to avoid and monitor accidental doping and charge fluctuations. The 2D Raman double peak in intrinsic graphene can be used to optically determine charge density, with decreasing peak split corresponding to increasing charge density. We find strong correlations between the 2D 1 and 2D 2 split vs 2D line widths, intensities, and peak positions. Charge density fluctuations can be measured with orders of magnitude higher precision than previously accomplished using the G-band shift with charge. The two 2D intrinsic peaks can be associated with the “inner” and “outer” Raman scattering processes, with the counterintuitive assignment of the phonon closer to the K point in the KM direction (outer process) as the higher energy peak. Even low charge screening lifts the phonon Kohn anomaly near the K point for graphene encapsulated in hBN, and shifts the dominant intensity from the lower to the higher energy peak.This work was supported by the United States National Science Foundation (DMR 1411008, DMR 1308659). J.C. thanks the Department of Defence (DoD), Air Force Office of Scientific Research for its support through the National Defence Science and Engineering Graduate (NDSEG) Fellowship, 32 CFR 168a. The authors would like to thank Cory Dean and Carlos Forsythe for the graphene encapsulated hBN sample. (DMR 1411008 - United States National Science Foundation; DMR 1308659 - United States National Science Foundation; 32 CFR 168a - Department of Defence (DoD), Air Force Office of Scientific Research through the National Defence Science and Engineering Graduate (NDSEG) Fellowship

Lattice-corrected strain-induced vector potentials in graphene

The electronic implications of strain in graphene can be captured at low energies by means of pseudovector potentials which can give rise to pseudomagnetic fields. These strain-induced vector potentials arise from the local perturbation to the electronic hopping amplitudes in a tight-binding framework. Here we complete the standard description of the strain-induced vector potential, which accounts only for the hopping perturbation, with the explicit inclusion of the lattice deformations or, equivalently, the deformation of the Brillouin zone. These corrections are linear in strain and are different at each of the strained, inequivalent Dirac points, and hence are equally necessary to identify the precise magnitude of the vector potential. This effect can be relevant in scenarios of inhomogeneous strain profiles, where electronic motion depends on the amount of overlap among the local Fermi surfaces. In particular, it affects the pseudomagnetic field distribution induced by inhomogeneous strain configurations, and can lead to new opportunities in tailoring the optimal strain fields for certain desired functionalities.Comment: Errata for version

Monolayer MoS2 strained to 1.3% with a microelectromechanical system

We report on a modified transfer technique for atomically thin materials integrated onto microelectromechanical systems (MEMS) for studying strain physics and creating strain-based devices. Our method tolerates the non-planar structures and fragility of MEMS, while still providing precise positioning and crack free transfer of flakes. Further, our method used the transfer polymer to anchor the 2D crystal to the MEMS, which reduces the fabrication time, increases the yield, and allowed us to exploit the strong mechanical coupling between 2D crystal and polymer to strain the atomically thin system. We successfully strained single atomic layers of molybdenum disulfide (MoS2) with MEMS devices for the first time and achieved greater than 1.3% strain, marking a major milestone for incorporating 2D materials with MEMS We used the established strain response of MoS2 Raman and Photoluminescence spectra to deduce the strain in our crystals and provide a consistency check. We found good comparison between our experiment and literature.Published versio

Intrinsic Optical Transition Energies in Carbon Nanotubes

Intrinsic optical transition energies for isolated and individual single wall carbon nanotubes grown over trenches are measured using tunable resonant Raman scattering. Previously measured E22_S optical transitions from nanotubes in surfactants are blue shifted 70-90 meV with respect to our measurements of nanotubes in air. This large shift in the exciton energy is attributed to a larger change of the exciton binding energy than the band-gap renormalization as the surrounding dielectric constant increases.Comment: Due to a mistake, a different paper was submitted as "revised v2". This is a re-submission of the origional version in order to correct the mistak

Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2

We demonstrate the continuous and reversible tuning of the optical band gap of suspended monolayer MoS2 membranes by as much as 500 meV by applying very large biaxial strains. By using chemical vapor deposition (CVD) to grow crystals that are highly impermeable to gas, we are able to apply a pressure difference across suspended membranes to induce biaxial strains. We observe the effect of strain on the energy and intensity of the peaks in the photoluminescence (PL) spectrum, and find a linear tuning rate of the optical band gap of 99 meV/%. This method is then used to study the PL spectra of bilayer and trilayer devices under strain, and to find the shift rates and Gr\"uneisen parameters of two Raman modes in monolayer MoS2. Finally, we use this result to show that we can apply biaxial strains as large as 5.6% across micron sized areas, and report evidence for the strain tuning of higher level optical transitions.Comment: Nano Lett., Article ASA

Epitaxial growth of Cu on Cu(001): experiments and simulations

A quantitative comparison between experimental and Monte Carlo simulation results for the epitaxial growth of Cu/Cu(001) in the submonolayer regime is presented. The simulations take into account a complete set of hopping processes whose activation energies are derived from semi-empirical calculations using the embedded-atom method. The island separation is measured as a function of the incoming flux and the temperature. A good quantitative agreement between the experiment and simulation is found for the island separation, the activation energies for the dominant processes, and the exponents that characterize the growth. The simulation results are then analyzed at lower coverages, which are not accessible experimentally, providing good agreement with theoretical predictions as well.Comment: Latex document. 7 pages. 3 embedded figures in separate PS files. One bbl fil