Coherent back-scattering near the two-dimensional metal-insulator transition

We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where the dramatic increase of the spin susceptibility has been observed earlier. We show that the corrections, which exist deeper in the metallic phase, weaken upon approaching to the transition and practically vanish at the critical density, thus suggesting that the localization is suppressed near and at the transition even in zero field.Comment: to appear in PR

Flow diagram of the metal-insulator transition in two dimensions

The discovery of the metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenged the veracity of one of the most influential conjectures in the physics of disordered electrons, which states that `in two dimensions, there is no true metallic behaviour'; no matter how weak the disorder, electrons would be trapped and unable to conduct a current. However, that theory did not account for interactions between the electrons. Here we investigate the interplay between the electron-electron interactions and disorder near the MIT using simultaneous measurements of electrical resistivity and magnetoconductance. We show that both the resistance and interaction amplitude exhibit a fan-like spread as the MIT is crossed. From these data we construct a resistance-interaction flow diagram of the MIT that clearly reveals a quantum critical point, as predicted by the two-parameter scaling theory (Punnoose and Finkel'stein, Science 310, 289 (2005)). The metallic side of this diagram is accurately described by the renormalization group theory without any fitting parameters. In particular, the metallic temperature dependence of the resistance sets in when the interaction amplitude reaches gamma_2 = 0.45 - a value in remarkable agreement with the one predicted by the theory.Comment: as publishe

Spin-independent origin of the strongly enhanced effective mass in a dilute 2D electron system

We have accurately measured the effective mass in a dilute two-dimensional electron system in silicon by analyzing temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A sharp increase of the effective mass with decreasing electron density has been observed. Using tilted magnetic fields, we have found that the enhanced effective mass is independent of the degree of spin polarization, which points to a spin-independent origin of the mass enhancement and is in contradiction with existing theories

Pauli spin susceptibility of a strongly correlated two-dimensional electron liquid

Thermodynamic measurements reveal that the Pauli spin susceptibility of strongly correlated two-dimensional electrons in silicon grows critically at low electron densities - behavior that is characteristic of the existence of a phase transition.Comment: As publishe

New chromogenic dipeptide substrate for continuous assay of the d-alanyl-d-alanine dipeptidase VanX required for high-level vancomycin resistance

International audienc

Temperature dependence of low-energy phonons in magnetic nonsuperconducting TbNi₂B₂C

We report temperature dependence of low-energy phonons in magnetic nonsuperconducting TbNi2B2C single crystals measured by inelastic neutron scattering. We observed a low-temperature softening and broadening of two phonon branches, qualitatively similar to that previously reported for superconducting RNi2B2C (R= rare earth, Y) compounds. This result suggests that the superconductivity in TbNi2B2C compounds is absent not because of a weak electron-phonon coupling but as a result of pairbreaking due to magnetism