2 research outputs found
Dead time duration and active reset influence on the afterpulse probability of InGaAs/InP SPAD based SPDs
We perform the detailed study of the afterpulse probability's dependence in
the InGaAs/InP sine-gated SPAD on the dead time and the used approach for its
implementation. We have found that the comparator's simple latching can
significantly reduce afterpulses' probability, even without using a dead time
pulse that lowers the diode bias voltage. We have found that with a low
probability of afterpulse ( 10 mus), it
is sufficient to use a circuit with latching of the comparator, which will
significantly simplify the development of an SPD device for applications in
which such parameters are acceptable. We also proposed a precise method for
measuring and the afterpulse and presented a model describing the recurrent
nature of this effect. We have shown that it should not use a simple model to
describe the afterpulse probability due to rough underlying physical processes.
A second-order model is preferable