2 research outputs found
Rules for modelling in computer-aided fault tree synthesis
In the design of process plants safety has assumed an increasingly high profile. One of the
techniques used in hazard identification is the fault tree, which involves first the synthesis of
the tree and then its analysis. The construction of a fault tree, however, requires special
skills and can be a time-consuming process. It is therefore attractive to develop computer
aids for the synthesis stage to match those which already exist for the analysis of the tree.
A computer based system for fault tree synthesis has been developed at Loughborough
University. This thesis is part of a continuing programme of work associated with this facility. [Continues.
Ultrafast Spectral Dynamics of CsPb(Br<sub><i>x</i></sub>Cl<sub>1–<i>x</i></sub>)<sub>3</sub> Mixed-Halide Nanocrystals
In
this work we investigated the spectral dynamics of cesium lead
mixed-halide, CsPbÂ(Br<sub><i>x</i></sub>Cl<sub>1–<i>x</i></sub>)<sub>3</sub> perovskite nanocrystals probed with
complementary spectral techniques: time-resolved photoluminescence
and transient absorption spectroscopy. Mixed-halide perovskite nanocrystals
were synthesized via a hot-injection method followed by anion exchange
reactions. Our results show that increased Cl content in perovskite
nanocrystals (<i>a</i>) diminished the photoluminescence
quantum yield and gave rise to rapid radiative recombination of carriers;
(<i>b</i>) resulted in rapid thermalization of hot carriers
and low carrier temperatures, which suggests weaker hot-phonon bottleneck
and Burstein–Moss effects; (<i>c</i>) decreased the
bandgap renormalization energy, which suggests high exciton binding
energy and poor charge extraction in Cl substituted perovskite nanocrystals;
and (<i>d</i>) increased the number of carriers undergoing
Auger losses, where Auger processes dominate over trap-assisted recombination.
These findings provide a generalized framework to guide researchers
as to when mixed-halide perovskite nanocrystals would be useful for
optoelectronic technologies and when they would be detrimental to
device performance