8,738 research outputs found

    Electron Interactions and Scaling Relations for Optical Excitations in Carbon Nanotubes

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    Recent fluorescence spectroscopy experiments on single wall carbon nanotubes reveal substantial deviations of observed absorption and emission energies from predictions of noninteracting models of the electronic structure. Nonetheless, the data for nearly armchair nanotubes obey a nonlinear scaling relation as a function the tube radius RR. We show that these effects can be understood in a theory of large radius tubes, derived from the theory of two dimensional graphene where the coulomb interaction leads to a logarithmic correction to the electronic self energy and marginal Fermi liquid behavior. Interactions on length scales larger than the tube circumference lead to strong self energy and excitonic effects that compete and nearly cancel so that the observed optical transitions are dominated by the graphene self energy effects.Comment: 4 page

    Interference of an Array of Independent Bose-Einstein Condensates

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    Interference of an array of independent Bose-Einstein condensates, whose experiment has been performed recently, is theoretically studied in detail. Even if the number of the atoms in each gas is kept finite and the phases of the gases are not well defined, interference fringes are observed on each snapshot. The statistics of the snapshot interference patterns, i.e., the average fringe amplitudes and their fluctuations (covariance), are computed analytically, and concise formulas for their asymptotic values for long time of flight are derived. Processes contributing to these quantities are clarified and the relationship with the description on the basis of the symmetry-breaking scenario is revealed.Comment: 13 pages, 3 figure

    Cyclotron radiation and emission in graphene

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    Peculiarity in the cyclotron radiation and emission in graphene is theoretically examined in terms of the optical conductivity and relaxation rates to propose that graphene in magnetic fields can be a candidate to realize the Landau level laser, proposed decades ago [H. Aoki, Appl. Phys. Lett. {\bf 48}, 559 (1986)].Comment: 4 pages, 3 figure

    Interband Light Absorption at a Rough Interface

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    Light absorption at the boundary of indirect-band-gap and direct-forbidden gap semiconductors is analyzed. It is found that the possibility of the electron momentum nonconservation at the interface leads to essential enhancement of absorption in porous and microcrystalline semiconductors. The effect is more pronounced at a rough boundary due to enlargement of the share of the interface atoms.Comment: LATEX, 19 pages, 4 PostScript figure

    Anharmonicity and asymmetry of Landau levels for a two-dimensional electron gas

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    We calculate the density of states of a two dimensional electron gas located at the interface of a GaAlAs/GaAs heterojunction. The disorder potential which is generally created by a single doping layer behind a spacer, is here enhanced by the presence of a second delta doped layer of scatterers which can be repulsive or attractive impurities. We have calculated the density of states by means of the Klauder's approximation, in the presence of a magnetic field of arbitrary strength. At low field either band tails or impurity bands are observed for attractive potentials, depending on the impurity concentration. At higher field, impurity bands are observed for both repulsive and attractive potentials. We discuss the effect of such an asymmetrical density of states on the transport properties in the quantum Hall effect regime.Comment: 22 pages, 12 figures. submitted to Phys. Rev.

    Self-Consistent Electron Subbands of Gaas/Algaas Heterostructure in Magnetic Fields Parallel to the Interface

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    The effect of strong magnetic fields parallel to GaAs/AlGaAs interface on the subband structure of a 2D electron layer is ivestigated theoretically. The system with two levels occupied in zero magnetic field is considered and the magnetic field induced depletion of the second subband is studied. The confining potential and the electron dispersion relations are calculated self-consistently, the electron- electron interaction is taken into account in the Hartree approximation.Comment: written in LaTeX, 8 pages, 4 figs. available on request from [email protected]

    Ising-like Spin Anisotropy and Competing Antiferromagnetic - Ferromagnetic Orders in GdBaCo_{2}O_{5.5} Single Crystals

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    In RBaCo_{2}O_{5+x} compounds (R is rare earth), a ferromagnetic-antiferromagnetic competition is accompanied by a giant magnetoresistance. We study the magnetization of detwinned GdBaCo_{2}O_{5.5} single crystals, and find a remarkable uniaxial anisotropy of Co^{3+} spins which is tightly linked with the chain oxygen ordering in GdO_{0.5} planes. Reflecting the underlying oxygen order, CoO_2 planes also develop a spin-state order consisting of Co^{3+} ions in alternating rows of S=1 and S=0 states. The magnetic structure appears to be composed of weakly coupled ferromagnetic ladders with Ising-like moments, which gives a simple picture for magnetotransport phenomena.Comment: 5 pages, 4 figures, accepted to Phys.Rev.Let

    A theoretical approach to thermal noise caused by an inhomogeneously distributed loss -- Physical insight by the advanced modal expansion

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    We modified the modal expansion, which is the traditional method used to calculate thermal noise. This advanced modal expansion provides physical insight about the discrepancy between the actual thermal noise caused by inhomogeneously distributed loss and the traditional modal expansion. This discrepancy comes from correlations between the thermal fluctuations of the resonant modes. The thermal noise spectra estimated by the advanced modal expansion are consistent with the results of measurements of thermal fluctuations caused by inhomogeneous losses.Comment: 10 pages, 4 figure

    Contact resistance and shot noise in graphene transistors

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    Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene Field Effect Transistors. We give simple expressions to estimate the voltage-dependent contribution of the contacts to the total resistance and noise in the diffusive and ballistic regimes.Comment: 6 pages, 4 figures; Figs 3 and 4 completed and appendix adde
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