The Fractional Quantum Hall States of Dirac Electrons in Graphene

We have investigated the fractional quantum Hall states for the Dirac electrons in a graphene layer in different Landau levels. The relativistic nature of the energy dispersion relation of the electrons in the graphene significantly modifies the inter-electron interactions. This results in a specific dependence of the ground state energy and the energy gaps for electrons on the Landau level index. For the valley-polarized states, i.e. at \nu =1/m, m being an odd integer, the energy gaps have the largest values in the n=1 Landau level. For the valley-unpolarized states, e.g., for the 2/3 state, the energy gaps are suppressed for the n=1 Landau level as compared to the n=0 level. For both the n=1 and n=0 Landau levels the ground state of the 2/3 system is fully valley-unpolarized.Comment: accepted for publication in Phys. Rev. Let

Hall plateau diagram for the Hofstadter butterfly energy spectrum

We extensively study the localization and the quantum Hall effect in the Hofstadter butterfly, which emerges in a two-dimensional electron system with a weak two-dimensional periodic potential. We numerically calculate the Hall conductivity and the localization length for finite systems with the disorder in general magnetic fields, and estimate the energies of the extended levels in an infinite system. We obtain the Hall plateau diagram on the whole region of the Hofstadter butterfly, and propose a theory for the evolution of the plateau structure with increasing disorder. There we show that a subband with the Hall conductivity $n e^2/h$ has $|n|$ separated bunches of extended levels, at least for an integer $n \leq 2$. We also find that the clusters of the subbands with identical Hall conductivity, which repeatedly appear in the Hofstadter butterfly, have a similar localization property.Comment: 9 pages, 12 figure

16O+16O^{16}{\rm O} + ^{16}{\rm O} nature of the superdeformed band of 32S^{32}{\rm S} and the evolution of the molecular structure

The relation between the superdeformed band of $^{32}{\rm S}$ and $^{16}{\rm O} + ^{16}{\rm O}$ molecular bands is studied by the deformed-base antisymmetrized molecular dynamics with the Gogny D1S force. It is found that the obtained superdeformed band members of $^{32}{\rm S}$ have considerable amount of the $^{16}{\rm O} + ^{16}{\rm O}$ component. Above the superdeformed band, we have obtained two excited rotational bands which have more prominent character of the $^{16}{\rm O} + ^{16}{\rm O}$ molecular band. These three rotational bands are regarded as a series of $^{16}{\rm O} + ^{16}{\rm O}$ molecular bands which were predicted by using the unique $^{16}{\rm O}$ -$^{16}{\rm O}$ optical potentil. As the excitation energy and principal quantum number of the relative motion increase, the $^{16}{\rm O} + ^{16}{\rm O}$ cluster structure becomes more prominent but at the same time, the band members are fragmented into several states

Quantum transport properties of two-dimensional systems in disordered magnetic fields with a fixed sign

Quantum transport in disordered magnetic fields is investigated numerically in two-dimensional systems. In particular, the case where the mean and the fluctuation of disordered magnetic fields are of the same order is considered. It is found that in the limit of weak disorder the conductivity exhibits a qualitatively different behavior from that in the conventional random magnetic fields with zero mean. The conductivity is estimated by the equation of motion method and by the two-terminal Landauer formula. It is demonstrated that the conductance stays on the order of $e^2/h$ even in the weak disorder limit. The present behavior can be interpreted in terms of the Drude formula. The Shubnikov-de Haas oscillation is also observed in the weak disorder regime.Comment: 6 pages, 7 figures, to appear in Phys. Rev.

Conductance plateau transitions in quantum Hall wires with spatially correlated random magnetic fields

Quantum transport properties in quantum Hall wires in the presence of spatially correlated disordered magnetic fields are investigated numerically. It is found that the correlation drastically changes the transport properties associated with the edge state, in contrast to the naive expectation that the correlation simply reduces the effect of disorder. In the presence of correlation, the separation between the successive conductance plateau transitions becomes larger than the bulk Landau level separation determined by the mean value of the disordered magnetic fields. The transition energies coincide with the Landau levels in an effective magnetic field stronger than the mean value of the disordered magnetic field. For a long wire, the strength of this effective magnetic field is of the order of the maximum value of the magnetic fields in the system. It is shown that the effective field is determined by a part where the stronger magnetic field region connects both edges of the wire.Comment: 7 pages, 10 figure

Metal insulator transition in modulated quantum Hall systems

The quantum Hall effect is studied numerically in modulated two-dimensional electron systems in the presence of disorder. Based on the scaling property of the Hall conductivity as well as the localization length, the critical energies where the states are extended are identified. We find that the critical energies, which are distributed to each of the subbands, combine into one when the disorder becomes strong, in the way depending on the symmetry of the disorder and/or the periodic potential.Comment: 4 pages, 4 figures, to appear in Physica

Conductance of Disordered Wires with Symplectic Symmetry: Comparison between Odd- and Even-Channel Cases

The conductance of disordered wires with symplectic symmetry is studied by numerical simulations on the basis of a tight-binding model on a square lattice consisting of M lattice sites in the transverse direction. If the potential range of scatterers is much larger than the lattice constant, the number N of conducting channels becomes odd (even) when M is odd (even). The average dimensionless conductance g is calculated as a function of system length L. It is shown that when N is odd, the conductance behaves as g --> 1 with increasing L. This indicates the absence of Anderson localization. In the even-channel case, the ordinary localization behavior arises and g decays exponentially with increasing L. It is also shown that the decay of g is much faster in the odd-channel case than in the even-channel case. These numerical results are in qualitative agreement with existing analytic theories.Comment: 4 page

Chemical potential jump between hole- and electron-doped sides of ambipolar high-Tc cuprate

In order to study an intrinsic chemical potential jump between the hole- and electron-doped high-Tc superconductors, we have performed core-level X-ray photoemission spectroscopy (XPS) measurements of Y0.38La0.62Ba1.74La0.26Cu3Oy (YLBLCO), into which one can dope both holes and electrons with maintaining the same crystal structure. Unlike the case between the hole-doped system La_2-xSrxCuO4 and the electron-doped system Nd_2-xCexCuO4, we have estimated the true chemical potential jump between the hole- and electron-doped YLBLCO to be ~0.8 eV, which is much smaller than the optical gaps of 1.4-1.7 eV reported for the parent insulating compounds. We attribute the reduced jump to the indirect nature of the charge-excitation gap as well as to the polaronic nature of the doped carriers.Comment: 4 pages, 3 figure