Physics of Interfaces in MAPbI3 Perovskite Solar Cells

Interfaces in perovskite solar cells, such as interfaces between adjacent layers or at grain bound- aries, play an important role in determining the performance of photovoltaic devices. This thesis describes investigations of the physical properties of several such interfaces in order to elucidate their influence on the photovoltaic devices and further utilize this knowledge to improve the device performance. First, we investigate the interface between a perovskite active layer and a ZnO elec- tron transport layer. We demonstrate that this interface strongly influences the microstructure of polycrystalline perovskite. Using a combination of doping and modification by a self-assembled monolayer, we optimize both the bulk and surface properties of the ZnO layer, leading to a su- perior perovskite layer microstructure and a doubling of the photovoltaic performance. Next, we investigate the interface between an organic electron transport layer and the metal cathode. We modify this interface by inserting a series of newly synthesized π -extended phosphoniumfluorene electrolytes and demonstrate that such modification significantly increases the built-in potential of the device by compensating for the non-ideal energetic alignment caused by the other device layers. Consequently, the modified devices exhibit an increase in the open-circuit voltage by up to 120 mV. Finally, we systematically investigate the effects of grain boundaries on the performance of perovskite solar cells by combining the experimental characterizations and the theoretical de- vice simulations. We show that grain boundaries contribute to the non-radiative recombination losses in perovskite solar cells and the small grains serve as recombination ’hot spots’ that limit the open circuit voltage, as well as the performance of the devices

Photoluminescence Mapping over Laser Pulse Fluence and Repetition Rate as a Fingerprint of Charge and Defect Dynamics in Perovskites

Defects in metal halide perovskites (MHP) are photosensitive, making the observer effect unavoidable when laser spectroscopy methods are applied. Photoluminescence (PL) bleaching and enhancement under light soaking and recovery in dark are examples of the transient phenomena that are consequent to the creation and healing of defects. Depending on the initial sample composition, environment, and other factors, the defect nature and evolution can strongly vary, making spectroscopic data analysis prone to misinterpretations. Herein, the use of an automatically acquired dependence of PL quantum yield (PLQY) on the laser pulse repetition rate and pulse fluence as a unique fingerprint of both charge carrier dynamics and defect evolution is demonstrated. A simple visual comparison of such fingerprints allows for assessment of similarities and differences between MHP samples. The study illustrates this by examining methylammonium lead triiodide (MAPbI3) films with altered stoichiometry that just after preparation showed very pronounced defect dynamics at time scale from milliseconds to seconds, clearly distorting the PLQY fingerprint. Upon weeks of storage, the sample fingerprints evolve toward the standard stoichiometric MAPbI3 in terms of both charge carrier dynamics and defect stability. Automatic PLQY mapping can be used as a universal method for assessment of perovskite sample quality

Are Shockley-Read-Hall and ABC models valid for lead halide perovskites?

Metal halide perovskites are an important class of emerging semiconductors. Their charge dynamics is poorly understood due to limited knowledge of defect physics and charge recombination mechanisms. Nevertheless, classical ABC and Shockley-Read-Hall (SRH) models are ubiquitously applied to perovskites without considering their validity. Herein, an advanced technique mapping photoluminescence quantum yield (PLQY) as a function of both the excitation pulse energy and repetition frequency is developed and employed to examine the validity of these models. While ABC and SRH fail to explain the charge dynamics in a broad range of conditions, the addition of Auger recombination and trapping to the SRH model enables a quantitative fitting of PLQY maps and low-power PL decay kinetics, and extracting trap concentrations and efficacies. Higher-power PL kinetics requires the inclusion of additional non-linear processes. The PLQY mapping developed herein is suitable for a comprehensive testing of theories and is applicable to any semiconductor.Comment: Supplementary Information available at https://cloudstore.zih.tu-dresden.de/index.php/s/t5gBPJgwZiwfRR

Strand-specific PCR of UV radiation-damaged genomic DNA revealed an essential role of DNA-PKcs in the transcription-coupled repair

<p>Abstract</p> <p>Background</p> <p>In eukaryotic cells, there are two sub-pathways of nucleotide excision repair (NER), the global genome (gg) NER and the transcription-coupled repair (TCR). TCR can preferentially remove the bulky DNA lesions located at the transcribed strand of a transcriptional active gene more rapidly than those at the untranscribed strand or overall genomic DNA. This strand-specific repair in a suitable restriction fragment is usually determined by alkaline gel electrophoresis followed by Southern blotting transfer and hybridization with an indirect end-labeled single-stranded probe. Here we describe a new method of TCR assay based on strand-specific-PCR (SS-PCR). Using this method, we have investigated the role of DNA-dependent protein kinase catalytic subunit (DNA-PKcs), a member of the phosphatidylinositol 3-kinase-related protein kinases (PIKK) family, in the TCR pathway of UV-induced DNA damage.</p> <p>Results</p> <p>Although depletion of DNA-PKcs sensitized HeLa cells to UV radiation, it did not affect the ggNER efficiency of UV-induced cyclobutane pyrimidine dimers (CPD) damage. We postulated that DNA-PKcs may involve in the TCR process. To test this hypothesis, we have firstly developed a novel method of TCR assay based on the strand-specific PCR technology with a set of smart primers, which allows the strand-specific amplification of a restricted gene fragment of UV radiation-damaged genomic DNA in mammalian cells. Using this new method, we confirmed that siRNA-mediated downregulation of Cockayne syndrome B resulted in a deficiency of TCR of the UV-damaged dihydrofolate reductase (<it>DHFR</it>) gene. In addition, DMSO-induced silencing of the c-myc gene led to a decreased TCR efficiency of UV radiation-damaged c-myc gene in HL60 cells. On the basis of the above methodology verification, we found that the depletion of DNA-PKcs mediated by siRNA significantly decreased the TCR capacity of repairing the UV-induced CPDs damage in <it>DHFR </it>gene in HeLa cells, indicating that DNA-PKcs may also be involved in the TCR pathway of DNA damage repair. By means of immunoprecipitation and MALDI-TOF-Mass spectrometric analysis, we have revealed the interaction of DNA-PKcs and cyclin T2, which is a subunit of the human transcription elongation factor (P-TEFb). While the P-TEFb complex can phosphorylate the serine 2 of the carboxyl-terminal domain (CTD) of RNA polymerase II and promote transcription elongation.</p> <p>Conclusion</p> <p>A new method of TCR assay was developed based the strand-specific-PCR (SS-PCR). Our data suggest that DNA-PKcs plays a role in the TCR pathway of UV-damaged DNA. One possible mechanistic hypothesis is that DNA-PKcs may function through associating with CyclinT2/CDK9 (P-TEFb) to modulate the activity of RNA Pol II, which has already been identified as a key molecule recognizing and initializing TCR.</p

Remarkable performance recovery in highly defective perovskite solar cells by photo-oxidation

Exposure to environmental factors is generally expected to cause degradation in perovskite films and solar cells. Herein, we show that films with certain defect profiles can display the opposite effect, healing upon exposure to oxygen under illumination. We tune the iodine content of methylammonium lead triiodide perovskite from understoichiometric to overstoichiometric and expose them to oxygen and light prior to the addition of the top layers of the device, thereby examining the defect dependence of their photooxidative response in the absence of storage-related chemical processes. The contrast between the photovoltaic properties of the cells with different defects is stark. Understoichiometric samples indeed degrade, demonstrating performance at 33% of their untreated counterparts, while stoichiometric samples maintain their performance levels. Surprisingly, overstoichiometric samples, which show low current density and strong reverse hysteresis when untreated, heal to maximum performance levels (the same as untreated, stoichiometric samples) upon the photooxidative treatment. A similar, albeit smaller-scale, effect is observed for triple cation and methylammonium-free compositions, demonstrating the general application of this treatment to state-of-the-art compositions. We examine the reasons behind this response by a suite of characterization techniques, finding that the performance changes coincide with microstructural decay at the crystal surface, reorientation of the bulk crystal structure for the understoichiometric cells, and a decrease in the iodine-to-lead ratio of all films. These results indicate that defect engineering is a powerful tool to manipulate the stability of perovskite solar cells

Electrical Pumping of Perovskite Diodes: Toward Stimulated Emission.

Funder: Alexander von Humboldt Foundation; Id: http://dx.doi.org/10.13039/100005156Funder: Center for Advancing Electronics Dresden (cfaed)The success of metal halide perovskites in photovoltaic and light-emitting diodes (LEDs) motivates their application as a solid-state thin-film laser. Various perovskites have shown optically pumped stimulated emission of lasing and amplified spontaneous emission (ASE), yet the ultimate goal of electrically pumped stimulated emission has not been achieved. As an essential step toward this goal, here, a perovskite diode structure that simultaneously exhibits stable operation at high current density (≈1 kA cm-2 ) and optically excited ASE (with a threshold of 180 µJ cm-2 ) is reported. This diode structure achieves an electroluminescence quantum efficiency of 0.8% at 850 A cm-2 , which is estimated to be ≈3% of the charge carrier population required to reach ASE in the same device. It is shown that the formation of a large angle waveguide mode and the reduction of parasitic absorption losses are two major design principles for diodes to obtain a positive gain for stimulated emission. In addition to its prospect as a perovskite laser, a new application of electrically pumped ASE is proposed as an ideal perovskite LED architecture allowing 100% external radiation efficiency