Preparation and dielectric properties of BaBi1.8Ln0.2Nb2O9 (Ln = Ce, Gd) ceramics

The main subject of the presented research is to investigate the dielectric properties of BaBi1.8Ln0.2Nb2O9 (Ln = Ce, Gd) ceramics prepared by conventional solid state reaction route. The materials were examined using XRD and FT-IR methods. Moreover, the AC conductivity, dielectric constant and dielectric loss of the ceramics were determined. X-ray diffraction confirmed that all these compounds crystallize in an orthorhombic structure. Fourier transform infrared spectroscopy study confirmed the presence of two characteristic vibration bands located at around 617 cm-1 and 818 cm-1 for BaBi2Nb2O9. The experimental results show that the substitution of Bi by Ce or Gd causes a decrease in Curie temperature, dielectric constant and dielectric loss

Structural, electric and dielectric properties of Eu-doped SrBi2Nb2O9 ceramics obtained by co-precipitation route

This paper presents a study of the structure and dielectric properties of Eu-doped SrBi2Nb2O9 ceramics prepared by co-precipitation route and sintered at 850 °C. The materials were examined using XRD and FTIR methods. XRD data indicated the formation of well crystallized structure of the pure and doped SrBi2Nb2O9, without the presence of undesirable phases. FTIR spectra do not bring a significant shift in the band positions. Moreover, the AC conductivity, dielectric constant and dielectric loss of the ceramics were determined through the frequency range [50 kHz–1 MHz]. In particular, the dielectric constant (ε′) and dielectric losses (tan δ) of the SrBi2Nb2O9 and SrBi1.6Eu0.4Nb2O9 ceramics were measured as a function of temperature at various frequencies

Microstructure and nanoscale piezoelectric properties in Ba0.85Ca0.15Ti0.9Zr0.1O3 (BCTZ) thin films grown by pulsed laser deposition

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