Anisotropy of zero-bias diffusive anomalies for different orientations of an external magnetic field

We consider the influence of the electron-electron interaction on the nonlinearity of the current-voltage characteristic of the tunnel junction at low bias (diffusive anomaly) in the presence of the classical magnetic field. We present the theory of a new phenomenon which manifests itself in the strong anisotropy of a diffusive anomaly for different orientations of the magnetic field with respect to the interface of the tunnel junction. The nonlinear differential tunneling conductance has a universal magnetic field dependence, so that only the magnetic field component perpendicular to the interface is involved. In particular, when the magnetic field is parallel to the interface, the I-V characteristic does not depend on the value of the magnetic field.Comment: 12 pages, LaTeX format, 2 figures (available from the authors), accepted for publication by PR

Effect of connecting wires on the decoherence due to electron-electron interaction in a metallic ring

We consider the weak localization in a ring connected to reservoirs through leads of finite length and submitted to a magnetic field. The effect of decoherence due to electron-electron interaction on the harmonics of AAS oscillations is studied, and more specifically the effect of the leads. Two results are obtained for short and long leads regimes. The scale at which the crossover occurs is discussed. The long leads regime is shown to be more realistic experimentally.Comment: LaTeX, 4 pages, 4 eps figure

Absence of weak antilocalization in ferromagnetic films

We present magnetoresistance measurements performed on ultrathin films of amorphous Ni and Fe. In these films the Curie temperature drops to zero at small thickness, making it possible to study the effect of ferromagnetism on localization. We find that non-ferromagnetic films are characterized by positive magnetoresistance. This is interpreted as resulting from weak antilocalization due to strong Bychkov-Rashba spin orbit scattering. As the films become ferromagnetic the magnetoresistance changes sign and becomes negative. We analyze our data to identify the individual contributions of weak localization, weak antilocalization and anisotropic magnetoresistance and conclude that the magnetic order suppresses the influence of spin-orbit effects on localization phenomena in agreement with theoretical predictions.Comment: 6 pages, 6 figure

Zero-bias anomaly in two-dimensional electron layers and multiwall nanotubes

The zero-bias anomaly in the dependence of the tunneling density of states $\nu (\epsilon)$ on the energy $\epsilon$ of the tunneling particle for two- and one-dimensional multilayered structures is studied. We show that for a ballistic two-dimensional (2D) system the first order interaction correction to DOS due to the plasmon excitations studied by Khveshchenko and Reizer is partly compensated by the contribution of electron-hole pairs which is twice as small and has the opposite sign. For multilayered systems the total correction to the density of states near the Fermi energy has the form $\delta \nu/\nu_0 = {max} (| \epsilon |, \epsilon^*)/4\epsilon_F$, where $\epsilon^*$ is the plasmon energy gap of the multilayered 2D system. In the case of one-dimensional conductors we study multiwall nanotubes with the elastic mean free path exceeding the radius of the nanotube. The dependence of the tunneling density of states energy, temperature and on the number of shells is found.Comment: 8 pages, 3 figure

Zero-Field Satellites of a Zero-Bias Anomaly

Spin-orbit (SO) splitting, $\pm \omega_{SO}$, of the electron Fermi surface in two-dimensional systems manifests itself in the interaction-induced corrections to the tunneling density of states, $\nu (\epsilon)$. Namely, in the case of a smooth disorder, it gives rise to the satellites of a zero-bias anomaly at energies $\epsilon=\pm 2\omega_{SO}$. Zeeman splitting, $\pm \omega_{Z}$, in a weak parallel magnetic field causes a narrow {\em plateau} of a width $\delta\epsilon=2\omega_{Z}$ at the top of each sharp satellite peak. As $\omega_{Z}$ exceeds $\omega_{SO}$, the SO satellites cross over to the conventional narrow maxima at $\epsilon = \pm 2\omega_{Z}$ with SO-induced plateaus $\delta\epsilon=2\omega_{SO}$ at the tops.Comment: 7 pages including 2 figure

Magnetic-field-dependent zero-bias diffusive anomaly in Pb oxide-n-InAs structures: Coexistence of two- and three-dimensional states

The results of experimental and theoretical studies of zero-bias anomaly (ZBA) in the Pb-oxide-n-InAs tunnel structures in magnetic field up to 6T are presented. A specific feature of the structures is a coexistence of the 2D and 3D states at the Fermi energy near the semiconductor surface. The dependence of the measured ZBA amplitude on the strength and orientation of the applied magnetic field is in agreement with the proposed theoretical model. According to this model, electrons tunnel into 2D states, and move diffusively in the 2D layer, whereas the main contribution to the screening comes from 3D electrons.Comment: 8 double-column pages, REVTeX, 9 eps figures embedded with epsf, published versio

Interaction effects and phase relaxation in disordered systems

This paper is intended to demonstrate that there is no need to revise the existing theory of the transport properties of disordered conductors in the so-called weak localization regime. In particular, we demonstrate explicitly that recent attempts to justify theoretically that the dephasing rate (extracted from the magnetoresistance) remains finite at zero temperature are based on the profoundly incorrect calculation. This demonstration is based on a straightforward evaluation of the effect of the electron-electron interaction on the weak localization correction to the conductivity of disordered metals. Using well-controlled perturbation theory with the inverse conductance $g$ as the small parameter, we show that this effect consists of two contributions. First contribution comes from the processes with energy transfer smaller than the temperature. This contribution is responsible for setting the energy scale for the magnetoresistance. The second contribution originates from the virtual processes with energy transfer larger than the temperature. It is shown that the latter processes have nothing to do with the dephasing, but rather manifest the second order (in $1/g$) correction to the conductance. This correction is calculated for the first time. The paper also contains a brief review of the existing experiments on the dephasing of electrons in disordered conductors and an extended qualitative discussion of the quantum corrections to the conductivity and to the density of electronic states in the weak localization regime.Comment: 34 pages, 13 .eps figure

"Colliding beam" enhancement mechanism of deuteron-deuteron fusion reactions in matter

We suggest a ``ping-pong'' mechanism of enhancement for fusion reactions between a low energy external deuteron beam and the deuterons in a condensed matter or molecular target. The mechanism is based on the possibility of acceleration of a target deuteron by the Coulomb field of a projectile deuteron with its subsequent rebound from a heavy atom in matter and the following fusion of the two deuterons moving towards each other. This effectively converts the fixed target process into a colliding beam reaction. In a simple limiting case this reduces the negative penetrability exponent by a factor of $\sqrt{2}$. We also discuss a contribution given by ``zero oscillations'' of a bound target deuteron. The proposed mechanism is expected to be efficient in compounds with target deuterons localized in the vicinity of heavy atoms.Comment: 4 page

Quantum conductivity corrections in two dimensional long-range disordered systems with strong spin-orbit splitting of electron spectrum

We study quantum corrections to conductivity in a 2D system with a smooth random potential and strong spin-orbit splitting of the spectrum. We show that the interference correction is positive and down to the very low temperature can exceed the negative correction related to electron-electron interactions. We discuss this result in the context of the problem of the metal-insulator transition in Si-MOSFET structures.Comment: 8 pages, no figure

Non-monotonic magnetoresistance of two-dimensional electron systems in the ballistic regime

We report experimental observations of a novel magnetoresistance (MR) behavior of two-dimensional electron systems in perpendicular magnetic field in the ballistic regime, for k_BT\tau/\hbar>1. The MR grows with field and exhibits a maximum at fields B>1/\mu, where \mu is the electron mobility. As temperature increases the magnitude of the maximum grows and its position moves to higher fields. This effect is universal: it is observed in various Si- and GaAs- based two-dimensional electron systems. We compared our data with recent theory based on the Kohn anomaly modification in magnetic field, and found qualitative similarities and discrepancies.Comment: 4 pages 3 figure