Strategies for built-in characterization testing and performance monitoring of analog RF circuits with temperature measurements

This paper presents two approaches to characterize RF circuits with built-in differential temperature measurements, namely the homodyne and heterodyne methods. Both non-invasive methods are analyzed theoretically and discussed with regard to the respective trade-offs associated with practical off-chip methodologies as well as on-chip measurement scenarios. Strategies are defined to extract the center frequency and 1 dB compression point of a narrow-band LNA operating around 1 GHz. The proposed techniques are experimentally demonstrated using a compact and efficient on-chip temperature sensor for built-in test purposes that has a power consumption of 15 μW and a layout area of 0.005 mm2 in a 0.25 μm CMOS technology. Validating results from off-chip interferometer-based temperature measurements and conventional electrical characterization results are compared with the on-chip measurements, showing the capability of the techniques to estimate the center frequency and 1 dB compression point of the LNA with errors of approximately 6% and 0.5 dB, respectively

Review of temperature sensors as monitors for RF mmW built-in testing and self-calibration schemes

International audienceThis paper presents an overview of the work done so far related to the use of temperature sensors as performance monitors for RF and MMW circuits with the goal to implement built-in testing or self-calibration techniques. The strategy is to embed small temperature sensors on the same silicon die as the circuit under test, taking advantage of empty spaces in the layout. This paper reviews the physical principles, and presents examples that reveal how temperature sensors can be used as functional built-in testers serving to reduce testing costs and enhance yield as part of self-healing strategies