Self-resonant Coil for Contactless Electrical Conductivity Measurement under Pulsed Ultra-high Magnetic Fields

In this study, we develop experimental apparatus for contactless electrical conductivity measurements under pulsed high magnetic fields over 100 T using a self-resonant-type high-frequency circuit. The resonant power spectra were numerically analyzed, and the conducted simulations showed that the apparatus is optimal for electrical conductivity measurements of materials with high electrical conductivity. The newly developed instruments were applied to a high-temperature cuprate superconductor La$_{2-x}$Sr$_x$CuO$_4$ to show conductivity changes in magnetic fields up to 102 T with a good signal-to-noise ratio. The upper critical field was determined with high accuracy.Comment: 11 pages, 5 figure

Proximity detector circuits: an attractive alternative to tunnel diode oscillators for contactless measurements in pulsed magnetic fields

A new radio frequency oscillator circuit based on a proximity detector integrated circuit is described as an alternative for the traditional tunnel diode oscillator used for pulsed magnetic field measurements at low temperatures. The new circuit has been successfully applied to measure the superconducting upper critical field in Ba{sub 0.55}K{sub 0.45}Fe{sub 2}As{sub 2} single crystfl.ls up to 60 T. The new circuit design avoids many of the problems associated with tunnel diode circuits while keeping the advantages of contact less measurements in pulsed magnets

The surface-state of the topological insulator Bi2_2Se3_3 revealed by cyclotron resonance

To date transport measurements of topological insulators have been dominated by the conductivity of the bulk, leading to substantial difficulties in resolving the properties of the surface. To this end, we use high magnetic field, rf- and microwave-spectroscopy to selectively couple to the surface conductivity of Bi$_2$Se$_3$ at high frequency. In the frequency range of a few GHz we observe a crossover from quantum oscillations indicative of a small 3D Fermi surface, to cyclotron resonance indicative of a 2D surface state

Radio-frequency measurements of UNiX compounds (X= Al, Ga, Ge) in high magnetic fields

We performed radio-frequency (RF) skin-depth measurements of antiferromagnetic UNiX compounds (X=Al, Ga, Ge) in magnetic fields up to 60 T and at temperatures between 1.4 to {approx}60 K. Magnetic fields are applied along different crystallographic directions and RF penetration-depth was measured using a tunnel-diode oscillator (TDO) circuit. The sample is coupled to the inductive element of a TDO resonant tank circuit, and the shift in the resonant frequency {Delta}f of the circuit is measured. The UNiX compounds exhibit field-induced magnetic transitions at low temperatures, and those transitions are accompanied by a drastic change in {Delta}f. The results of our skin-depth measurements were compared with previously published B-T phase diagrams for these three compounds