Insight on Electronic Travel Aids for Visually Impaired People: A Review on the Electromagnetic Technology

This review deals with a comprehensive description of the available electromagnetic travel aids for visually impaired and blind people. This challenging task is considered as an outstanding research area due to the rapid growth in the number of people with visual impairments. For decades, different technologies have been employed for solving the crucial challenge of improving the mobility of visually impaired people, but a suitable solution has not yet been developed. Focusing this contribution on the electromagnetic technology, the state-of-the-art of available solutions is demonstrated. Electronic travel aids based on electromagnetic technology have been identified as an emerging technology due to their high level of achievable performance in terms of accuracy, flexibility, lightness, and cost-effectiveness

Kink Effect in S22 for GaN and GaAs HEMTs

This letter provides a clear understanding of the kink effect in S22 for active solid-state electronic devices. The origin of the kink effect is ascribed to the intrinsic section of the transistor, whereas the extrinsic elements determine its shape at the extrinsic ports. Therefore, to fairly compare the kink effect for GaN and GaAs HEMTs, the present analysis is not only focused on the whole devices but also on their intrinsic sections. The experimental evidence shows that, independently of the specific semiconductor technology, the size and the frequency band of the kink effect are mainly due to the values of the intrinsic transconductance and capacitances, respectively

A Review on Biomedical MIMO Radars for Vital Sign Detection and Human Localization

This paper reports a thorough overview on the last developments concerning the vital sign detection and the human localization employing the multiple-input-multiple-output (MIMO) technology. The wireless motion and vital sign detection represents an outstanding research area aimed at monitoring the health conditions of human subjects and at detecting their presence in different environments with minimal concern. MIMO radars exhibit several interesting advantages over conventional single-input-single-output architectures mainly related to their angle detection capabilities and enhanced signal-to-noise ratio. This paper describes the main features and details the operating principles of MIMO technology. Thereafter, it summarizes the state-of-the-art of the available solutions with the purpose of fueling the research activities on this hot topic

A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology

The aim of this feature article is to provide a deep insight into the origin of the kink effects affecting the output reflection coefficient (S22) and the short-circuit current-gain (h21) of solid-state electronic devices. To gain a clear and comprehensive understanding of how these anomalous phenomena impact device performance, the kink effects in S22 and h21 are thoroughly analyzed over a broad range of bias and temperature conditions. The analysis is accomplished using high-frequency scattering (S-) parameters measured on a gallium-nitride (GaN) high electron-mobility transistor (HEMT). The experiments show that the kink effects might become more or less severe depending on the bias and temperature conditions. By using a GaN HEMT equivalent-circuit model, the experimental results are analyzed and interpreted in terms of the circuit elements to investigate the origin of the kink effects and their dependence on the operating condition. This empirical analysis provides valuable information, simply achievable by conventional instrumentation, that can be used not only by GaN foundries to optimize the technology processes and, as a consequence, device performance, but also by designers that need to face out with the pronounced kink effects of this amazing technology

GaN HEMT noise modeling based on 50-Ω noise factor

The extraction of a high-frequency ivalent circuit model plays a fundamental role for the development of any emerging transistor technology. Indeed, an equivalent circuit can provide a valuable support for microwave engineers to ensure a fast and reliable optimization of both device fabrication and circuit design. As far as gallium nitride (GaN) HEMTs are concerned, research efforts have been mostly focused on determining equivalent circuits able to reproduce their large-signal behavior. Nevertheless, an increasing amount of interest is also being devoted to noise equivalent circuits, due to the interesting GaN technology noise performance. Within this context, the purpose of the present paper is to extract and fully validate an accurate noise model for GaN HEMTs based on a simple, fast, and reliable extraction procedure. The noise model is obtained by assigning an equivalent noise temperature to each resistor of the small-signal equivalent circuit. The accuracy of the extracted noise model is confirmed by the good agreement between measured and simulated high-frequency noise parameters

Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs

This paper presents the effects of optical radiation on the behavior of two scaled-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs). The tested devices, having a gate width of 100 and 200 µm and a gate length of 0.25 µm, were exposed to a laser beam with a wavelength of 404 nm (blue-ray) in order to investigate the main optical effects on the DC characteristics. Owing to the threshold shift and the charge generation, a marked increase of the gate and drain current was noticed. The occurrence of the kink effect in the absence of light exposure was identified, and a hypothesis about its origin is provided. The obtained results agree with the analysis previously carried out on gallium arsenide (GaAs)-based devices

Dual-Conversion Microwave Down Converter for Nanosatellite Electronic Warfare Systems

In this work, a microwave down converter is proposed for nanosatellite electronic warfare applications. It provides high spurious suppression by exploiting a dual-conversion architecture and premium performance in terms of noise figure and linear dynamic range. The system design takes advantage of commercial off-the-shelf components, thus allowing for both fast and cost-effective prototyping, which are key requirements particularly concerning CubeSat systems. Since different military, commercial, radar and communication systems operate in the 2–18 GHz frequency band, the capability to integrate such kinds of receivers in CubeSats represents the new frontier of the electronic warfare systems. Moreover, due to the wide operating bandwidth, it can be successfully exploited as the receiver for different applications, e.g., satellite communication, radars, etc

Effects of Gate-Length Scaling on Microwave MOSFET Performance

This paper focuses on the extraction of an accurate small-signal equivalent circuit for metal-oxide-semiconductor field-effect transistors (MOSFETs). An analytical modeling approach was developed and successfully validated through the comparison between measured and simulated scattering parameters. The extraction of the equivalent circuit elements allowed for the estimation of the intrinsic unity current-gain cutoff frequency, which is a crucial figure of merit for assessing the high-frequency performance. The experimental data show that the cutoff frequency of the tested devices exhibits a nearly ideal scaling behavior with decreasing gate length