Improved SrTiO3 thin films using oxygen relaxation technique

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`Maser-in-a-Shoebox': a portable plug-and-play maser device at room-temperature and zero magnetic-field

Masers, the microwave analogues of lasers, have seen a renaissance owing to the discovery of gain media that mase at room-temperature and zero-applied magnetic field. However, despite the ease with which the devices can be demonstrated under ambient conditions, achieving the ubiquity and portability which lasers enjoy has to date remained challenging. We present a maser device with a miniaturized maser cavity, gain material and laser pump source that fits within the size of a shoebox. The gain medium used is pentacene-doped in para-terphenyl and it is shown to give a strong masing signal with a peak power of -5 dBm even within a smaller form factor. The device is also shown to mase at different frequencies within a small range of 1.5 MHz away from the resonant frequency. The portability and simplicity of the device, which weighs under 5 kg, paves the way for demonstrators particularly in the areas of low-noise amplifiers, quantum sensors, cavity quantum electrodynamics and long-range communications

Dielectric properties characterization of La- and Dy-doped BiFeO3 thin films

The dielectric response of La- and Dy- doped BiFeO3 thin films at microwave frequencies (up to 12 GHz) has been monitored as a function of frequency, direct current (dc) electric field, and magnetic field in a temperature range from 25 to 300 °C. Both the real and imaginary parts of the response have been found to be non-monotonic (oscillating) functions of measuring frequency. These oscillations are not particularly sensitive to a dc electric field; however, they are substantially dampened by a magnetic field. The same effect has been observed when the volume of the characterized sample is increased. This phenomenon is attributed to the presence of a limited number of structural features with a resonance type response. The exact origin of these features is unknown at present. Leakage current investigations were performed on the whole set of films. The films were highly resistive with low leakage current, thereby giving us confidence in the microwave measurements. These typically revealed ‘N'-type I-V characteristic

Sintered alumina with low dielectric loss

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Optimizing strontium ruthenate thin films for near-infrared plasmonic applications

Several new plasmonic materials have recently been introduced in order to achieve better temperature stability than conventional plasmonic metals and control field localization with a choice of plasma frequencies in a wide spectral range. Here, epitaxial SrRuO 3 thin films with low surface roughness fabricated by pulsed laser deposition are studied. The influence of the oxygen deposition pressure (20-300 mTorr) on the charge carrier dynamics and optical constants of the thin films in the near-infrared spectral range is elucidated. It is demonstrated that SrRuO 3 thin films exhibit plasmonic behavior of the thin films in the near-infrared spectral range with the plasma frequency in 3.16-3.86 eV range and epsilon-near-zero wavelength in 1.11-1.47 mm range that could be controlled by the deposition conditions. The possible applications of these films range from the heat-generating nanostructures in the near-infrared spectral range, to metamaterial-based ideal absorbers and epsilon-near-zero components, where the interplay between real and imaginary parts of the permittivity in a given spectral range is needed for optimizing the spectral performance. . At the same time, new applications were put on the agenda, such as perfect absorbers and the so-called epsilon-near-zero (ENZ) effects where the interplay between real and imaginary parts of permittivity is essential for flexibility of the design and achieving required light penetration in the material needed for heat and hot-electron generation. SrRuO 3 (SRO), a material with perovskite-type crystal structure, has been the subject to intense research due to its high thermal and electrical conductivity, and high thermal and chemical stability (up to 1200 K in oxidizing or inert-gas atmospheres

Enhanced electrical properties of ferroelectric thin films by ultraviolet radiation

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