Representations of elastic fields of circular dislocation and disclination loops in terms of spherical harmonics and their application to various problems of the theory of defects

AbstractElastic fields of circular dislocation and disclination loops are represented in explicit form in terms of spherical harmonics, i.e. via series with Legendre and associated Legendre polynomials. Representations are obtained by expanding Lipschitz-Hankel integrals with two Bessel functions into Legendre series. Found representations are then applied to the solutions of elasticity boundary-value problems of the theory of defects and to the calculation of elastic fields of segmented spherical inclusions. In the framework of virtual circular dislocation–disclination loops technique, a general scheme to solving axisymmetric elasticity problems with boundary conditions specified on a sphere is given. New solutions for elastic fields of a twist disclination loop in a spherical particle and near a spherical pore are demonstrated. The easy and straightforward way for calculations of elastic fields of segmented spherical inclusion with uniaxial eigenstrain is shown

SYNTHESIS OF THICK GALLIUM NITRIDE LAYERS BY METHOD OF MULTI-STAGE GROWTH ON SUBSTRATES WITH COLUMN STRUCTURE

Subject of Research.The paper deals with processes of formation and transformation of defects during multi-stage growth of thick gallium nitride layers with hydride vapor phase epitaxy on GaN/Al2O3 substrates with buried column pattern formed with the use of metal-organic vapor phase epitaxy. Methods. The growth of initial GaN layers was performed with the use of metal-organic vapor phase epitaxy. On the surface of the initial layers columns with the height of 800 nm were generated by means of ion etching. These columns were overgrown with 3-4 µm-thick GaN layers. On thus formed substrate multi-stage growth of GaN layers was performed with the use of hydride vapor-phase epitaxy. The total thickness of GaN layers was 100-1500 µm. The grown layers were studied by optical and electron microscopy and Raman spectroscopy. Main Results. Density of threading dislocations in the layers grown by hydride vapor-phase epitaxy was (3-6)·107 cm-2, that was one order of magnitude lower than in the used substrate, and two to three orders lower than dislocation density in typical GaN layers grown on commercial sapphire substrates. Raman spectroscopy data were indicative of low level of mechanical stress in the layers and their high structural uniformity. It was established that under multi-stage growth conditions, non-catastrophic cracks (those that do not cause sample destruction) are able to transform into macropores and appear to be an important structural element, serving to stress relaxation in the bulk of thick gallium nitride layers grown on foreign substrates. Practical Relevance. The results of the study can be used in the development of III-nitride heterostructures for optoelectronics and high-power and high-frequency microelectronics

Students' mental health during the pandemic:results of the observational cross-sectional COVID-19 MEntal health inTernational for university Students (COMET-S) study

Introduction: The aim of the study was to search rates of depression and mental health in university students, during the COVID-19 pandemic. Materials and methods: This is an observational cross-sectional study. A protocol gathering sociodemographic variables as well as depression, anxiety and suicidality and conspiracism was assembled, and data were collected anonymously and online from April 2020 through March 2021. The sample included 12,488 subjects from 11 countries, of whom 9,026 were females (72.2%; aged 21.11 ± 2.53), 3,329 males (26.65%; aged 21.61 ± 2.81) and 133 “non-binary gender” (1.06%; aged 21.02 ± 2.98). The analysis included chi-square tests, correlation analysis, ANCOVA, multiple forward stepwise linear regression analysis and Relative Risk ratios. Results: Dysphoria was present in 15.66% and probable depression in 25.81% of the total study sample. More than half reported increase in anxiety and depression and 6.34% in suicidality, while lifestyle changes were significant. The model developed explained 18.4% of the development of depression. Believing in conspiracy theories manifested a complex effect. Close to 25% was believing that the vaccines include a chip and almost 40% suggested that facemask wearing could be a method of socio-political control. Conspiracism was related to current depression but not to history of mental disorders. Discussion: The current study reports that students are at high risk for depression during the COVID-19 pandemic and identified specific risk factors. It also suggested a role of believing in conspiracy theories. Further research is important, as it is targeted intervention in students' groups that are vulnerable both concerning mental health and conspiracism

Promotion of variant human mammary epithelial cell outgrowth by ionizing radiation: an agent-based model supported by in vitro studies

IntroductionMost human mammary epithelial cells (HMEC) cultured from histologically normal breast tissues enter a senescent state termed stasis after 5 to 20 population doublings. These senescent cells display increased size, contain senescence associated beta-galactosidase activity, and express cyclin-dependent kinase inhibitor, p16INK4A (CDKN2A; p16). However, HMEC grown in a serum-free medium, spontaneously yield, at low frequency, variant (v) HMEC that are capable of long-term growth and are susceptible to genomic instability. We investigated whether ionizing radiation, which increases breast cancer risk in women, affects the rate of vHMEC outgrowth.MethodsPre-stasis HMEC cultures were exposed to 5 to 200 cGy of sparsely (X- or gamma-rays) or densely (1 GeV/amu 56Fe) ionizing radiation. Proliferation (bromodeoxyuridine incorporation), senescence (senescence-associated beta-galactosidase activity), and p16 expression were assayed in subcultured irradiated or unirradiated populations four to six weeks following radiation exposure, when patches of vHMEC became apparent. Long-term growth potential and p16 promoter methylation in subsequent passages were also monitored. Agent-based modeling, incorporating a simple set of rules and underlying assumptions, was used to simulate vHMEC outgrowth and evaluate mechanistic hypotheses.ResultsCultures derived from irradiated cells contained significantly more vHMEC, lacking senescence associated beta-galactosidase or p16 expression, than cultures derived from unirradiated cells. As expected, post-stasis vHMEC cultures derived from both unirradiated and irradiated cells exhibited more extensive methylation of the p16 gene than pre-stasis HMEC cultures. However, the extent of methylation of individual CpG sites in vHMEC samples did not correlate with passage number or treatment. Exposure to sparsely or densely ionizing radiation elicited similar increases in the numbers of vHMEC compared to unirradiated controls. Agent-based modeling indicated that radiation-induced premature senescence of normal HMEC most likely accelerated vHMEC outgrowth through alleviation of spatial constraints. Subsequent experiments using defined co-cultures of vHMEC and senescent cells supported this mechanism.ConclusionsOur studies indicate that ionizing radiation can promote the outgrowth of epigenetically altered cells with pre-malignant potential

Enabling Time-Synchronized Hybrid Networks With Low-Cost IoT Modules

Precisely synchronized communication is a major precondition for many industrial applications. At the same time, hardware cost and power consumption need to be kept as low as possible in the Internet of Things (IoT) paradigm. While many wired solutions on the market achieve these requirements, wireless alternatives are an interesting field for research and development. This article presents a novel IEEE802.11n/ac wireless solution, exhibiting several advantages over state-of-the-art competitors. It is based on a market-available wireless System on a Chip with modified low-level communication firmware combined with a low-cost field-programmable gate array. By achieving submicrosecond synchronization accuracy, our solution outperforms the precision of low-cost products by almost four orders of magnitude. Based on inexpensive hardware, the presented wireless module is up to 20 times cheaper than software-defined-radio solutions with comparable timing accuracy. Moreover, it consumes three to five times less power. To back up our claims, we report data that we collected with a high sampling rate (2000 samples per second) during an extended measurement campaign of more than 120 h, which makes our experimental results far more representative than others reported in the literature. Additional support is provided by the size of the testbed we used during the experiments, composed of a hybrid network with nine nodes divided into two independent wireless segments connected by a wired backbone. In conclusion, we believe that our novel Industrial IoT module architecture will have a significant impact on the future technological development of high-precision time-synchronized communication for the cost-sensitive industrial IoT market

Electron magnetic resonance of iron-gallium borate single crystals

Electron magnetic resonance (EMR) studies of iron-gallium borate, FexGa1−xBO3, single crystals have been carried out in the frequency range ca. 8–38 GHz in magnetizing fields up to 10 kOe and the temperature range of 4–310 K. With decreasing x in the range of 0.34≤x≤1, the EMR spectra show a gradual passage from a low-frequency antiferromagnetic resonance (AFMR) mode at x = 1 toward a coexistence of AFMR and cluster magnetic resonance arising, respectively, from completely and partially magnetically ordered crystal regions. Temperature and concentration dependences of magnetic characteristics of iron-gallium borates, namely, the Néel temperature, the Dzyaloshinskii–Moriya field, and the isotropic energy gap, have been determined by means of AFMR. In contrast to unmixed FeBO3, FexGa1−xBO3 crystals with 0.34≤x≤0.85 show anomalous nonmonotonic temperature dependences of the Dzyaloshinskii–Moriya field with a maximum well below the Néel temperature suggesting the occurrence of another magnetic transition in this temperature range