Evaluation of conduction eigenchannels of an adatom probed by an STM tip

Ballistic conductance through a single atom adsorbed on a metallic surface and probed by a scanning tunneling microscope (STM) tip can be decomposed into eigenchannel contributions, which can be potentially obtained from shot noise measurements. Our density functional theory calculations provide evidence that transmission probabilities of these eigenchannels encode information on the modifications of the adatom's local density of states caused by its interaction with the STM tip. In the case of open shell atoms, this can be revealed in nonmonotonic behavior of the eigenchannel's transmissions as a function of the tip-adatom separation.Comment: 4.5 pages, 5 figures, REVTe

Electron-Phonon Coupling in Highly-Screened Graphene

Photoemission studies of graphene have resulted in a long-standing controversy concerning the strength of the experimental electron-phonon interaction in comparison with theoretical calculations. Using high-resolution angle-resolved photoemission spectroscopy we study graphene grown on a copper substrate, where the metallic screening of the substrate substantially reduces the electron-electron interaction, simplifying the comparison of the electron-phonon interaction between theory and experiment. By taking the nonlinear bare bandstructure into account, we are able to show that the strength of the electron-phonon interaction does indeed agree with theoretical calculations. In addition, we observe a significant bandgap at the Dirac point of graphene.Comment: Submitted to Phys. Rev. Lett. on July 20, 201

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.Comment: 14 pages, 4 Figure

Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films

Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-resolved photoemssion spectroscopy, and hybrid density functional theory we have unveiled the bandstructure of LuSb, where electron-hole compensation is identified as a mechanism responsible for large magnetoresistance in this topologically trivial compound. In contrast to bulk single crystal analogues, quasi-two-dimensional behavior is observed in our thin films for both electron and holelike carriers, indicative of dimensional confinement of the electronic states. Introduction of defects through growth parameter tuning results in the appearance of quantum interference effects at low temperatures, which has allowed us to identify the dominant inelastic scattering processes and elucidate the role of spin-orbit coupling. Our findings open up new possibilities of band structure engineering and control of transport properties in rare-earth monopnictides via epitaxial synthesis.Comment: 20 pages, 12 figures; includes supplementary informatio

Why Virtue Ethics?

Contemporary virtue ethics, an agent-centred ethical theory, has been presented as a response to inadequacies in more traditional act-centred theories. In this paper, I argue that such a response is insufοcient: contemporary virtue ethics fails to avoid the inadequacies that it purports to avoid, and brings with it problems of its own. This paper is divided into 5 sections, in the οrst of which I introduce contemporary virtue ethics as an agent-centred and pluralistic ethical theory. In section 2, I present inadequacies that virtue ethics claims to avoid: being too reductive, too algorithmic, too abstract, self-effacing, and self-other asymmetric. In section 3, I consider and analyse virtue ethics’ account of right action and of motives in order to argue in section 4 that, if these inadequacies are indeed problems affecting traditional ethical theories, virtue ethics does not avoid these problems either— particularly because of its basis in the concept of virtues and its heavy reliance on phronesis. I show that another ethical theory, limited moral pluralism, has the same advantages of not being overly reductive, algorithmic, or abstract, and being self-other symmetric, and that virtue ethics does not avoid self-effacement as it claims to. I also question here whether self-effacement and self-other asymmetry should be considered problems when evaluating moral theories. Finally, I suggest in section 5 that virtue ethics is open to further criticisms of indeterminacy and lack of explanatory power

Growth and characterization of α\alpha-Sn thin films on In- and Sb-rich reconstructions of InSb(001)

$\alpha$-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and structural quality of $\alpha$-Sn thin films. $\alpha$-Sn growth on InSb often results in out-diffusion of indium, a p-type dopant. By growing $\alpha$-Sn via molecular beam epitaxy on the Sb-rich c(4$\times$4) surface reconstruction of InSb(001) rather than the In-rich c(8$\times$2), we demonstrate a route to substantially decrease and minimize this indium incorporation. The reduction in indium concentration allows for the study of the surface and bulk Dirac nodes in $\alpha$-Sn via angle-resolved photoelectron spectroscopy without the common approaches of bulk doping or surface dosing, simplifying topological phase identification. The lack of indium incorporation is verified in angle-resolved and -integrated ultraviolet photoelectron spectroscopy as well as in clear changes in the Hall response