39 research outputs found

    Metal-Insulator Transition in Disordered Two-Dimensional Electron Systems

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    We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase which is stabilized by electronic interactions, from the insulating phase where disorder prevails over the electronic interactions, has been identified. The existence of the quantum critical point leads to a divergence in the density of states of the underlying collective modes at the transition, causing the thermodynamic properties to behave critically as the transition is approached. We show that the interplay of electron-electron interactions and disorder can explain the observed transport properties and the anomalous enhancement of the spin susceptibility near the metal-insulator transition

    Temperature-induced spontaneous time-reversal symmetry breaking on the honeycomb lattice

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    Phase transitions involving spontaneous time-reversal symmetry breaking are studied on the honeycomb lattice at finite hole-doping with next-nearest-neighbor repulsion. We derive an exact expression for the mean-field equation of state in closed form, valid at temperatures much less than the Fermi energy. Contrary to standard expectations, we find that thermally induced intraband particle-hole excitations can create and stabilize a uniform metallic phase with broken time-reversal symmetry as the temperature is "raised" in a region where the groundstate is a trivial metal

    Quantum theory of structured monochromatic light

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    Applications that envisage utilizing the orbital angular momentum (OAM) at the single photon level assume that the OAM degrees of freedom that the photons inherit from the classical wave solutions are orthogonal. To test this critical assumption, we quantize the beam-like solutions of the vector Helmholtz equation from first principles to delineate its elementary quantum mechanical degrees of freedom. We show that although the beam-photon operators do not in general satisfy the canonical commutation relations, implying that the photon states they create are not orthogonal, the states are nevertheless bona fide eigenstates of the number and Hamiltonian operators. The explicit representation for the photon operators presented in this work forms a natural basis to study light-matter interactions and quantum information processing at the single photon level

    Renormalization group study of intervalley scattering and valley splitting in a two-valley system

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    Renormalization group equations are derived for the case when both valley splitting and intervalley scattering are present in a two-valley system. A third scaling parameter is shown to be relevant when the two bands are split but otherwise distinct. The existence of this parameter changes the quantitative behavior at finite temperatures, but the qualitative conclusions of the two-parameter theory are shown to be unaffected for realistic choice of parameters

    Magnetoconductivity in the presence of Bychkov-Rashba spin-orbit interaction

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    A closed-form analytic formula for the magnetoconductivity in the diffusive regime is derived in the presence of Bychkov-Rashba spin-orbit interaction in two dimensions. It is shown that at low fields B << B_{so}, where B_{so} is the characteristic field associated with spin precession, D'yakonov-Perel' mechanism leads to spin relaxation, while for B >> B_{so} spin relaxation is suppressed and the resulting spin precession contributes a Berry phase-like spin phase to the magnetoconductivity. The relative simplicity of the formula greatly facilitates data fitting, allowing for the strength of the spin-orbit coupling to be easily extracted

    Test of scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs

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    We show that once the effects of valley splitting and intervalley scattering are incorporated, renormalization group theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the lowest accessible temperatures
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