39 research outputs found
Quantum Entropic Effects in the Liquid Viscosities of Hydrogen, Deuterium, and Neon
The extremely low temperatures have limited the availability and accuracy of
experimental thermophysical property measurements for cryogens, particularly
transport properties. Traditional scaling techniques such as corresponding
states theory have long been known to be inaccurate for fluids with strong
quantum effects. To address this need, this paper investigates how quantum
effects impact thermodynamics and momentum transfer (shear viscosity) in the
fluid phases of hydrogen, deuterium, and neon. We utilize experimental
viscosity measurements and reference empirical equations of state to show that
conventional entropy scaling is inadequate for quantum-dominated systems. We
then provide a simple empirical correction to entropy scaling based on the
ratio of quantum to packing length scale that accounts for the deviations
Quantum Simulation of an Extended Fermi-Hubbard Model Using a 2D Lattice of Dopant-based Quantum Dots
The Hubbard model is one of the primary models for understanding the
essential many-body physics in condensed matter systems such as Mott insulators
and cuprate high-Tc superconductors. Recent advances in atomically precise
fabrication in silicon using scanning tunneling microscopy (STM) have made
possible atom-by-atom fabrication of single and few-dopant quantum dots and
atomic-scale control of tunneling in dopant-based devices. However, the complex
fabrication requirements of multi-component devices have meant that emulating
two-dimensional (2D) Fermi-Hubbard physics using these systems has not been
demonstrated. Here, we overcome these challenges by integrating the latest
developments in atomic fabrication and demonstrate the analog quantum
simulation of a 2D extended Fermi-Hubbard Hamiltonian using STM-fabricated 3x3
arrays of single/few-dopant quantum dots. We demonstrate low-temperature
quantum transport and tuning of the electron ensemble using in-plane gates as
efficient probes to characterize the many-body properties, such as charge
addition, tunnel coupling, and the impact of disorder within the array. By
controlling the array lattice constants with sub-nm precision, we demonstrate
tuning of the hopping amplitude and long-range interactions and observe the
finite-size analogue of a transition from Mott insulating to metallic behavior
in the array. By increasing the measurement temperature, we simulate the effect
of thermally activated hopping and Hubbard band formation in transport
spectroscopy. We compare the analog quantum simulations with numerically
simulated results to help understand the energy spectrum and resonant tunneling
within the array. The results demonstrated in this study serve as a launching
point for a new class of engineered artificial lattices to simulate the
extended Fermi-Hubbard model of strongly correlated materials
Exciton broadening in WS2 /graphene heterostructures
We have used optical spectroscopy to observe spectral broadening of WS2 exciton reflectance peaks in heterostructures of monolayer WS2 capped with mono- to few-layer graphene. The broadening is found to be similar for the A and B excitons and on the order of 5-10 meV. No strong dependence on the number of graphene layers was observed within experimental uncertainty. The broadening can be attributed to charge- and energy-transfer processes between the two materials, providing an observed lower bound for the corresponding time scales of 65 fs
Two-Terminal and Multi-Terminal Designs for Next-Generation Quantized Hall Resistance Standards: Contact Material and Geometry
In this paper, we show that quantum Hall resistance measurements using two terminals may be as precise as four-terminal measurements when applying superconducting split contacts. The described sample designs eliminate resistance contributions of terminals and contacts such that the size and complexity of next-generation quantized Hall resistance devices can be significantly improved
Accessing ratios of quantized resistances in graphene p–n junction devices using multiple terminals
The utilization of multiple current terminals on millimeter-scale graphene p–n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the ν = 2 plateau (RH ≈ 12 906 Ω). These fractions take the form abRH and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the analytical framework recently presented in similar work. Furthermore, the production of several devices with large-scale junctions substantiates the approach of using simple ultraviolet lithography to obtain junctions of sufficient sharpness.The utilization of multiple current terminals on millimeter-scale graphene p–n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the ν = 2 plateau (RH ≈ 12 906 Ω). These fractions take the form abRH and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the analytical framework recently presented in similar work. Furthermore, the production of several devices with large-scale junctions substantiates the approach of using simple ultraviolet lithography to obtain junctions of sufficient sharpness