Fabrication of TiO2 Doped ZnO UV Detector by Pulse Laser Deposition

In this work TiO2 doped with ZnO(5% , 7%)nbsp thin films werenbsp grown by pulse laser deposition technique on P-type (Si)substratenbsp at RT under vacuum 10-2 mbar. The properties of the photovoltaic detector with the increase ofnbsp ZnO concentrationnbsp is studied. All the films display photovoltaic in the near visible region.nbspIt was observed that the responsivity increased to 3.39 atnbsp RT and to 3.82 after annealingnbsp at 500 ordmC withnbsp the increase of ZnO concentrations from (5% to 7%).The Specific efficiency increases with the increase of ZnO concentration atnbsp RT 10.9and afternbsp annealing to 12.3