28 research outputs found

    高効率・高安定太陽電池用非晶質シリコンゲルマニウム合金の研究

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    本文データは平成22年度国立国会図書館の学位論文(博士)のデジタル化実施により作成された画像ファイルを基にpdf変換したものである京都大学0048新制・課程博士博士(工学)甲第7956号工博第1858号新制||工||1152(附属図書館)UT51-99-M261京都大学大学院工学研究科電子物性工学専攻(主査)教授 松波 弘之, 教授 藤田 茂夫, 教授 橘 邦英学位規則第4条第1項該当Doctor of EngineeringKyoto UniversityDFA

    <Reports for Satellite Symposium> Outline of UNESCO-CHARM

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    Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency

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    Stopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H) used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes thicker. As a result, high crystallinity (Xc) of μc-Si:H was obtained. Eventually, a solar cell using this process improved the conversion efficiency by 1.3% (0.14 points), compared with a normal-condition cell. In this paper, we propose an easy method to improve the conversion efficiency with PECVD

    Effects of catalyst-generated atomic hydrogen treatment on amorphous silicon fabricated by Liquid-Si printing

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    The film property distributions along the thickness direction of the catalyst-generated atomic hydrogen (Cat-H*) treatment effects on hydrogenated amorphous silicon (a-Si:H) fabricated by plasma-enhanced chemical vapor deposition (plasma-CVD) and liquid-Si printing (LSP) were systematically investigated. The a-Si:H films fabricated by LSP (L-a-Si:H) had nanosize voids; however, these films showed a decrease in void size around the surface region after Cat-H* treatment, in contrast to stable plasma-CVD films without voids. The decrease in nonaffected area by Cat-H* treatment in L-a-Si:H films improved the performance of a-Si:H solar cells with L-a-Si:H. Additionally, we achieved a 3.1% conversion efficiency for a-Si:H solar cells with L-a-Si:H as the active layer by stacking nondoped a-Si:H, fabricated by plasma-CVD, on the active layer
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