28 research outputs found
高効率・高安定太陽電池用非晶質シリコンゲルマニウム合金の研究
本文データは平成22年度国立国会図書館の学位論文(博士)のデジタル化実施により作成された画像ファイルを基にpdf変換したものである京都大学0048新制・課程博士博士(工学)甲第7956号工博第1858号新制||工||1152(附属図書館)UT51-99-M261京都大学大学院工学研究科電子物性工学専攻(主査)教授 松波 弘之, 教授 藤田 茂夫, 教授 橘 邦英学位規則第4条第1項該当Doctor of EngineeringKyoto UniversityDFA
Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency
Stopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H) used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes thicker. As a result, high crystallinity (Xc) of μc-Si:H was obtained. Eventually, a solar cell using this process improved the conversion efficiency by 1.3% (0.14 points), compared with a normal-condition cell. In this paper, we propose an easy method to improve the conversion efficiency with PECVD
Hydrogenated Amorphous Silicon Germanium Alloys for High Efficiency and Stable Solar Cells
Effects of catalyst-generated atomic hydrogen treatment on amorphous silicon fabricated by Liquid-Si printing
The film property distributions along the thickness direction of the catalyst-generated atomic hydrogen (Cat-H*) treatment effects on hydrogenated amorphous silicon (a-Si:H) fabricated by plasma-enhanced chemical vapor deposition (plasma-CVD) and liquid-Si printing (LSP) were systematically investigated. The a-Si:H films fabricated by LSP (L-a-Si:H) had nanosize voids; however, these films showed a decrease in void size around the surface region after Cat-H* treatment, in contrast to stable plasma-CVD films without voids. The decrease in nonaffected area by Cat-H* treatment in L-a-Si:H films improved the performance of a-Si:H solar cells with L-a-Si:H. Additionally, we achieved a 3.1% conversion efficiency for a-Si:H solar cells with L-a-Si:H as the active layer by stacking nondoped a-Si:H, fabricated by plasma-CVD, on the active layer