Jesus and Japan In The Thought of Kanzo Uchimura: A Study in a Theological Interpretation for the Indigenization of Christianity in Modern Japan

The reason for our choosing salvation as the central topic of this study is to be found in the fact that a theologian\u27s concept of salvation, whatever it might be, is in the last analysis the surest index to what he regards as the ultimate issue of the Gospel. Then, it goes without saying that·the other aspects of Uchimura\u27s theological thought will be taken into consideration as far as they have bearing on our attempt to understand Uchimura\u27s soteriology

Theology of the Pain of God: An Analysis and Evaluation of Kazoh Kitamori\u27s (1916- ) Work in Japanese Protestantism

The overall negative appraisal of Kitamori must be considered as a critical reaction to various aspects of his own theology. Perhaps not one or two aspects of his theology alone are responsible for this. The reason for the negative responses is surely of a composite nature. However, it is not the main concern of this study to find answers individually to the questions raised above. The intention of this study is to analyze and assess Kitamori\u27s theology as a whole. But to try to find the answers to the questions is useful for the purpose here: they provide methodological clues

Improvement of the optical properties of GaN epilayers on Si(111): Impact of GaAs layer thickness on Si and pre‐growth strategy

This paper reports the effect of the GaN coating layer on the optical properties of GaN epilayers grown on GaAs/Si(111). Almost crack free GaN epilayers are found to be grown when a thin (∼25 nm) GaN coating layer is inserted on 0.5 and 2 μm GaAs layers at 550 °C. Then nitridation of the GaAs layer is done through the coating layer by NH3 flow while the substrate temperature is ramped at 1000 °C for epilayer growth. An attempt has also been made by implementing an additional GaN interlayer at 800 °C while growth is continued for epilayer growth. For this growth strategy, cracks also happened without improvement of the epilayer quality. PL measurements show high excitonic peak energy and high excitonic to yellow band intensity ratio for GaN epilayers grown on the 0.5 μm GaAs converted layer (CL) using a thin GaN coating layer. Those values are also found to be comparable/ better than for epilayers grown on 2 μm CL

Tree-Like Features Formed on Photoelectrochemically etched n-GaN surfaces ―Revelation of threading dislocations in GaN―

Electrochemical etching behavior of n-type GaN films grown on sapphire has been studied under UV (λ=325 nm) light illumination. As the cases for photoelectrochemical etching of n-type GaAs and InP, three different features appear on etched n-GaN surfaces depending on current density for etching; a high density (10^10 cm^<-2>) of tree-like protrusions at a lower c-urrent density, a relatively flat surface at an intermediate current density, and peeling of the film from the substrate at a higher current density. From the shape and the density of tree-like protrusions, in addition to the analogy of these results with those for n-type GaAs and InP, it is reasonable to conclude that tree-like protrusions formed at a low current density are due to threading dislocations involved in n-GaN films. Thus, the photoelectrochemical etching is found to become a convenient method to detect dislocations in n-type III nitride materials

Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs

This paper reports the reduced-stress GaN epitaxial growth on Si (1 1 1) using a porous GaN interlayer which is formed from GaAs layer by a novel nitridation process. Initially a 2 μm thick GaAs layer is grown on a Si(1 1 1) substrate by MBE. Then, a GaN buffer layer of 20 nm thick is grown on the GaAs layer at 550°C in a MOVPE reactor. The GaAs layer capped with the GaN buffer layer is annealed in NH3 to 1000°C. Through this process, a porous GaN layer is formed beneath the GaN cap layer. An epitaxial GaN layer is grown on the GaN buffer layer at 1000°C in the MOVPE reactor. The epitaxial layer grown on the porous-GaN/Si(1 1 1) structure is found to have no cracks on the surface. In contrast, an epitaxial layer grown on the GaAs layer nitrated without a cap layer many cracks are found in the epilayer and the layer is sometimes peeled off from the substrate. It is found that the surface morphology of the GaN/porous-GaN/Si(1 1 1) sample is markedly improved by employing a 40 nm-thick interlayer grown at 800°C in addition to the above processes. A PL spectrum with a high intensity ratio between the excitonic emission and the deep yellow emission is obtained for the GaN/porous-GaN/Si(1 1 1) sample. E2 peak position in Raman scattering spectrum also shows a reduced stress for the GaN epilayers grown on the porous-GaN/Si(1 1 1)