Electronic-Structure-Driven Magnetic Ordering in a Kondo Semiconductor CeOs2Al10

We report the anisotropic changes in the electronic structure of a Kondo semiconductor CeOs$_2$Al$_{10}$ across an anomalous antiferromagnetic ordering temperature ($T_0$) of 29 K, using optical conductivity spectra. The spectra along the $a$- and $c$-axes indicate that a $c$-$f$ hybridization gap emerges from a higher temperature continuously across $T_0$. Along the b-axis, on the other hand, a different energy gap with a peak at 20 meV appears below 39 K, which is higher temperature than $T_0$, because of structural distortion. The onset of the energy gap becomes visible below $T_0$. Our observation reveals that the electronic structure as well as the energy gap opening along the b-axis due to the structural distortion induces antiferromagnetic ordering below $T_0$.Comment: 4 pages, 4 figure

Laser-induced fine structures on silicon exposed to THz-FEL

We found the irradiation of focused linearly polarized terahertz (THz)-waves emitted from THz free-electron laser (THz-FEL) engraved fine periodic stripe structures on the surfaces of single-crystal Si wafers. The experiments were performed at several wavelengths ranging from 50 to 82 μm with a macro-pulse fluence up to 32 J/cm2. The engraved structures are considered equivalent to the laser-induced periodic surface structures (LIPSS) produced by the irradiation of a femtosecond (fs)-pulsed laser in the near-infrared (NIR) region. However, the minimum period of ∼1/25 of the wavelength in the present case of THz-FEL is surely much smaller than those reported so far by use of fs-lasers and no more explicable by the so far proposed mechanisms. The finer LIPSS confirmed by longer-wavelength laser excitation by means of THz-FEL motivates investigation into the universal mechanism of LIPSS formation, which has been under a hot debate for decades

Spatially Resolved Spectral Imaging by A THz-FEL

Using the unique characteristics of the free-electron-laser (FEL), we successfully performed high-sensitivity spectral imaging of different materials in the terahertz (THz) and far-infrared (FIR) domain. THz imaging at various wavelengths was achieved using in situ spectroscopy by means of this wavelength tunable and monochromatic source. In particular, owing to its large intensity and directionality, we could collect high-sensitivity transmission imaging of extremely low-transparency materials and three-dimensional objects in the 3–6 THz range. By accurately identifying the intrinsic absorption wavelength of organic and inorganic materials, we succeeded in the mapping of spatial distribution of individual components. This simple imaging technique using a focusing optics and a raster scan modality has made it possible to set up and carry out fast spectral imaging experiments on different materials in this radiation facility

Optical study of charge instability in CeRu2Al10 in comparison with CeOs2Al10 and CeFe2Al10

The anisotropic electronic structure responsible for the antiferromagnetic transition in CeRu2Al10 at the unusually high temperature of T0=28 K was studied using optical conductivity spectra, Ce 3d x-ray photoemission spectra, and band calculation. It was found that the electronic structure in the ac plane is that of a Kondo semiconductor, whereas that along the b axis has a nesting below 32 K (slightly higher than T0). These characteristics are the same as those of CeOs2Al10 [ S. Kimura et al. Phys. Rev. Lett. 106 056404 (2011)]. The c-f hybridization intensities between the conduction and 4f electrons of CeRu2Al10 and CeOs2Al10 are weaker than that of CeFe2Al10, showing no magnetic ordering. These results suggest that the electronic structure with one-dimensional weak c-f hybridization along the b axis combined with two-dimensional strong hybridization in the ac plane causes charge-density wave (CDW) instability, and the CDW state then induces magnetic ordering

Exploring Biomolecular Self-Assembly with Far-Infrared Radiation

Physical engineering technology using far-infrared radiation has been gathering attention in chemical, biological, and material research fields. In particular, the high-power radiation at the terahertz region can give remarkable effects on biological materials distinct from a simple thermal treatment. Self-assembly of biological molecules such as amyloid proteins and cellulose fiber plays various roles in medical and biomaterials fields. A common characteristic of those biomolecular aggregates is a sheet-like fibrous structure that is rigid and insoluble in water, and it is often hard to manipulate the stacking conformation without heating, organic solvents, or chemical reagents. We discovered that those fibrous formats can be conformationally regulated by means of intense far-infrared radiations from a free-electron laser and gyrotron. In this review, we would like to show the latest and the past studies on the effects of far-infrared radiation on the fibrous biomaterials and to suggest the potential use of the far-infrared radiation for regulation of the biomolecular self-assembly

Angular Dependence of Copper Surface Damage Induced by an Intense Coherent THz Radiation Beam

In this work, we show the damage induced by an intense coherent terahertz (THz) beam on copper surfaces. The metallic surface was irradiated by multiple picosecond THz pulses generated by the Free Electron Laser (FEL) at the ISIR facility of the Osaka University, reaching an electric field on the sample surface up to ~4 GV/m. No damage occurs at normal incidence, while images and spectroscopic analysis of the surface point out a clear dependence of the damage on the incidence angle, the electric field intensity, and polarization of the pulsed THz radiation. Ab initio analysis shows that the damage at high incidence angles could be related to the increase of the absorbance, i.e., to the increase of the temperature around or above 1000 °C. The experimental approach we introduced with multiple fast irradiations represents a new powerful technique useful to test, in a reproducible way, the damage induced by an intense electric gradient on copper and other metallic surfaces in view of future THz-based compact particle accelerators

Spatially resolved spectral-imaging by a THz-FEL

Using the unique characteristics of the free-electron-laser (FEL), we successfully performed high-sensitivity spectral-imaging of different materials in the terahertz (THz) and far-infrared (FIR) domain. THz imaging at various wavelengths was achieved using in-situ spectroscopy by means of this wavelength tunable and monochromatic source. In particular, owing to its large intensity and directionality we could collect high-sensitivity transmission imaging of extremely low-transparency materials and three-dimensional objects in the 3-6 THz range. By accurately identifying the intrinsic absorption wavelength of organic and inorganic materials, we succeeded in the mapping of spatial distribution of individual components. This simple imaging technique using a focusing optics and a raster scan modality has made it possible to set up and carry out fast spectral-imaging experiments on different materials in this radiation facility

Hard X-ray Photoelectron Spectroscopy of Metal–Insulator Transition in V 6_{6} O 13_{13}

Hard X-ray photoelectron spectroscopy (HAXPES) was performed to probe the changes of bulk electronic structures of V 6 O 13 across the metal to insulator transition (MIT) at ∼145 K. Small but still clear spectral differences were observed in the spectra of the V 1s, 2p, 3s, 3p, and O 1s core levels and V 3d-dominated valence band. The rather small spectral changes in V 6 O 13 is consistent with the negligible V–V dimerization effects in V 6 O 13 compared with that in VO 2 in the insulator phase