Collapse of thermal activation in moderately damped Josephson junctions

We study switching current statistics in different moderately damped Josephson junctions: a paradoxical collapse of the thermal activation with increasing temperature is reported and explained by interplay of two conflicting consequences of thermal fluctuations, which can both assist in premature escape and help in retrapping back into the stationary state. We analyze the influence of dissipation on the thermal escape by tuning the damping parameter with a gate voltage, magnetic field, temperature and an in-situ capacitor.Comment: 4 pages, 4 figure

Spectroscopy of SrRuO/Ru Junctions in Eutectic

We have investigated the tunnelling properties of the interface between superconducting Sr2RuO4 and a single Ru inclusion in eutectic. By using a micro-fabrication technique, we have made Sr2RuO4/Ru junctions on the eutectic system that consists of Sr2RuO4 and Ru micro-inclusions. Such a eutectic system exhibits surface superconductivity, called the 3-K phase. A zero bias conductance peak (ZBCP) was observed in the 3-K phase. We propose to use the onset of the ZBCP to delineate the phase boundary of a time-reversal symmetry breaking state.Comment: To be published in Proc of 24th Int. Conf. on Low Temperature Physics (LT24); 2 page

Non-local Control of the Kondo Effect in a Double Quantum Dot-Quantum Wire Coupled System

We have performed low-temperature transport measurements on a double quantum dot-quantum wire coupled device and demonstrated non-local control of the Kondo effect in one dot by manipulating the electronic spin states of the other. We discuss the modulation of the local density of states in the wire region due to the Fano-Kondo antiresonance, and the Ruderman-Kittel-Kasuya-Yoshida (RKKY) exchange interaction as the mechanisms responsible for the observed features.Comment: 4 pages, 4 figure

Measurement of photoluminescence spectral linewidth of a GaAs quantum well in perpendicular electric fields: Evidence of a crossover from trions to an electron-hole gas

By measuring the photoluminescence linewidth of a GaAs quantum well under perpendicular electric fields, we have traced the variation of the effective radius a* of a charged exciton (trion) as a function of electron density. The a* increases sharply above a critical density ns=2×1014 m−2, which is consistent with the decrease of the screening length predicted by nonlinear-screening theory. Our analysis shows that the crossover from trions to the two-dimensional electron gas plus hole is generated by Coulomb screening in the high-electron-density regime, eliminating the possible mechanism by the trion localization effect due to the single-electron localization

Exchange energy enhanced g-factors obtained from Landau fan diagrams at low magnetic fields

We report on measurement of the electron-hole effective g-factors (geff*) depending on electron filling factors ν from magnetophotoluminescence spectroscopy at low magnetic fields B<1 T in low electron density regime in a GaAs/Al0.33Ga0.67As-gated quantum well. Enhancement of geff* at odd ν is observed. The oscillatory behavior of geff* is compared with results of a theory that takes into account the lowest-order exchange interaction of the screened Coulomb interaction. Good agreement of the observed geff* with theoretical results is obtained except ν at around 3. The enhancement of geff* at even ν with decrease in electron density has not been observed

Near-Field Optical Mapping of Quantum Hall Edge States

journal articl

Evidence of a Transition from Nonlinear to Linear Screening of a Two-Dimensional Electron System Detected by Photoluminescence Spectroscopy

We clearly identify single-electron-localization (SEL), nonlinear screening (NLS), and linear screening (LS) regimes of gate induced electrons in a GaAs quantum well from photoluminescence spectra and intergate capacitance. Neutral and charged excitons observed in the SEL regime rapidly lose their oscillator strength when electron puddles are formed, which mark the onset of NLS. A further increase in the density of the electrons induces the transition from the NLS to LS, where the emission of a charged exciton changes to the recombination of two-dimensional electron gas and a hole

Photoluminescence fine structures in the fractional quantum Hall effect regime

We investigate polarization-resolved fine structure in the photoluminescence (PL) in the fractional quantum Hall effect regime at B=4–6 T, where small Zeeman energy allows spin-depolarized ground states. We observe up to five distinct peaks with characteristic polarization and temperature dependence in the vicinity of ν=1/3 and quenching of the PL from triplet charged quasiexcitons at around ν=1/4. Those findings appear to be consistent with results of exact diagonalization on a Haldane sphere including all spin configurations and are understood to be PL from fractionally charged quasiexcitons

Enhancement of electron and hole effective masses in back-gated GaAs/AlxGa1−xAs quantum wells

Both the electron and the optically created hole effective masses are found to be density dependent in a two-dimensional electron system of a GaAs/Al0.33Ga0.67As back-gated quantum well by magnetophotoluminescence spectroscopy. We show that the density-dependent electron effective mass increases with a decrease in the electron density (ns) to ns<1×1011 cm−2. It is found that the electron effective masses determined from the lowest and the second Landau levels are larger than those from the higher Landau levels. The hole effective mass is found to increase with a decrease in ns and the hole is found to localize at ns<3×1010 cm−2. We observe an upward convex curve of the photoluminescence peak energy at 2<ν<3 depending on the electron-hole distance divided by the magnetic length. These results clearly show the important roles of both electron-electron and electron-hole interactions in the recombination of a valence hole with a high-quality two-dimensional electron system