Meta-Stable Brane Configurations by Higher Order Polynomial Superpotential

We construct the type IIA nonsupersymmetric meta-stable brane configuration consisting of (2k+1) NS5-branes and D4-branes where the electric gauge theory superpotential has an order (2k+2) polynomial for the bifundamentals. We find a rich pattern of nonsupersymmetric meta-stable states as well as the supersymmetric stable ones. By adding the orientifold 4-plane to this brane configuration, we also describe the intersecting brane configuration of type IIA string theory corresponding to the meta-stable nonsupersymmetric vacua of corresponding gauge theory.Comment: 27pp, 8 figures; some footnotes added; to appear in IJMP

Explicit Construction of Spin 4 Casimir Operator in the Coset Model SO^(5)1×SO^(5)m/SO^(5)1+m \hat{SO} (5)_{1} \times \hat{SO} (5)_{m} / \hat{SO} (5)_{1+m}

We generalize the Goddard-Kent-Olive (GKO) coset construction to the dimension 5/2 operator for $\hat{so} (5)$ and compute the fourth order Casimir invariant in the coset model $\hat{SO} (5)_{1} \times \hat{SO} (5)_{m} / \hat{SO} (5)_{1+m}$ with the generic unitary minimal $c < 5/2$ series that can be viewed as perturbations of the $m \rightarrow \infty$ limit, which has been investigated previously in the realization of $c= 5/2$ free fermion model.Comment: 11 page

The Full Structure of Quantum N=2N=2 Super-W3(2)W_3^{(2)} Algebra

We present the complete structure of the nonlinear $N=2$ super extension of Polyakov-Bershadsky, $W_3^{(2)}$, algebra with the generic central charge, $c$, at the {\it quantum} level. It contains extra two pairs of fermionic currents with integer spins 1 and 2, besides the currents of $N=2$ superconformal and $W_3^{(2)}$ algebras. For $c\rightarrow \infty$ limit, the algebra reduces to the classical one, which has been studied previously. The 'hybrid' field realization of this algebra is also discussed.Comment: 8 pages, latex, no figure

High-Resolution Crystal Truncation Rod Scattering: Application to Ultrathin Layers and Buried Interfaces

In crystalline materials, the presence of surfaces or interfaces gives rise to crystal truncation rods (CTRs) in their X‐ray diffraction patterns. While structural properties related to the bulk of a crystal are contained in the intensity and position of Bragg peaks in X‐ray diffraction, CTRs carry detailed information about the atomic structure at the interface. Developments in synchrotron X‐ray sources, instrumentation, and analysis procedures have made CTR measurements into extremely powerful tools to study atomic reconstructions and relaxations occurring in a wide variety of interfacial systems, with relevance to chemical and electronic functionalities. In this review, an overview of the use of CTRs in the study of atomic structure at interfaces is provided. The basic theory, measurement, and analysis of CTRs are covered and applications from the literature are highlighted. Illustrative examples include studies of complex oxide thin films and multilayers

Reflection electron energy loss spectroscopy during initial stages of Ge growth on Si by molecular beam epitaxy

Using a conventional reflection high-energy electron diffraction gun together with an electron energy loss spectrometer, we have combined in situ measurements of inelastic scattering intensities from Si L2,3 and Ge L2,3 core losses with reflection electron diffraction data in order to analyze the initial stages of Ge heteroepitaxy on Si(001). Diffraction data indicate an initial layer-by-layer growth mode followed by island formation for Ge thicknesses greater than 0.8–1.1 nm. The electron energy core loss data are consistent with a simple model of grazing incidence electron scattering from the growing Ge film. Reflection electron energy loss spectroscopy is found to be highly surface sensitive, and the energy resolution and data rate are also sufficiently high to suggest that reflection electron energy loss spectroscopy may be a useful real-time, in situ surface chemical probe during growth by molecular beam epitaxy

More on Meta-Stable Brane Configuration

We describe the intersecting brane configuration of type IIA string theory corresponding to the meta-stable nonsupersymmetric vacua in four dimensional N=1 supersymmetric SU(N_c) gauge theory with an antisymmetric flavor, a conjugate symmetric flavor, eight fundamental flavors, m_f fundamental flavors and m_f antifundamental flavors. This is done by analyzing the N=1 supersymmetric SU(2m_f-N_c+4) magnetic gauge theory with dual matters and the corresponding dual superpotential.Comment: 20 pp, 3 figures; Pages 11,12, and 14 improved; to appear in CQ

Atomic scale lattice distortions and domain wall profiles

We present an atomic scale theory of lattice distortions using strain related variables and their constraint equations. Our approach connects constrained {\it atomic length} scale variations to {\it continuum} elasticity and describes elasticity at several length scales. We apply the approach to a two-dimensional square lattice with a monatomic basis, and find the elastic deformations and hierarchical atomic relaxations in the vicinity of a domain wall between two different homogeneous strain states. We clarify the microscopic origin of gradient terms, some of which are included phenomenologically in Ginzburg-Landau theory, by showing that they are anisotropic.Comment: 6 figure

Quantum N=2 super W3(2)W_3^{(2)} Algebra In Superspace

We discuss the N=2 extension of Polyakov-Bershadsky $W_3^{(2)}$ algebra with the generic central charge, $c$, at the quantum level in superspace. It contains, in addition to the spin 1 N=2 stress tensor, the spins $1/2, 2$ bosonic and spins $1/2, 2$ fermionic supercurrents satisfying the first class nonlinear chiral constraints. In the $c \to \infty$ limit, the ``classical'' N=2 $W_3^{(2)}$ algebra is recovered.Comment: 8 pages, LaTeX, name of the first author extende

Nonlithographic epitaxial Sn_xGe_(1–x) dense nanowire arrays grown on Ge(001)

We have grown 1-µm-thick Sn_xGe_(1–x)/Ge(001) epitaxial films with 0 < x < 0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of Sn_xGe_(1–x) nanowires oriented along [001], as confirmed by composition contrast observed in scanning transmission electron microscopy in planar view. The Sn-rich regions in these films dominate optical absorption at low energy; phase-separated Sn_xGe_(1–x) alloys have a lower-energy band gap than homogeneous alloys with the same average Sn composition