13 research outputs found
Molecular Diagnosis Through Genetic Typing of Skeletal Remains in Historical Populations of Situated Turkey
Lagina ve börükçü 2006 yılı çalışmaları
Thesis (Master)--Izmir Institute of Technology, Physics, Izmir, 2014Includes bibliographical references (leaves: 100-104)Text in English; Abstract: Turkish and Englishxx, 112 leavesGaAs (211)B wafer can be used for the growth of CdTe buffer layer by MBE after
thermal desorption of oxide presents on its surface. Then, CdTe buffered GaAs (211)B
called as composite substrate can be used as a template for the growth of HgCdTe.
Thermal desorption can be detrimental to surface in some cases if the structure
and constituents of this oxide are not fully understood. In this thesis, HF:H2O and
H2SO4:H2O2:H2O chemical treatments were applied to epiready GaAs (211)B samples
for the determination of suitability of their usage for CdTe buffer layer growth. Effects
of these wet chemical etching processes on the surface of samples are characterized and
determined by various kinds of characterization techniques including XRD, XPS, SEM,
EDX, AFM, and optical microscope. We also analyzed samples cut from 3" epiready
GaAs (211)B wafers to determine their oxide structures, surface roughnesses, crystal
qualities, and surface morphologies.
Crystal quality of as-received samples measured by RC were about 18-21 arcsec.
Amounts of arsenic and gallium oxides were decreased after HF treatment according
to XPS results. Gallium rich surface was obtained for samples treated with piranha
solution. Surface roughnesses of samples increased after piranha treatment. However,
it was determined that others treated with HF had smaller surface roughnesses than asreceived
samples