4 research outputs found
Kinetics formulation for Two-Dimensional Growth Behavior of Water/Ice Interface on Si Substrate
Sublimation drying is used in the drying process of semiconductor
device manufacturing. However, the solidification behavior mechanics
of sublimation agents on substrates has not been clarified. Therefore,
the properties of solidified films within substrate surfaces can become
nonuniform, leading to their collapse. This study aimed to analyze
the interface growth behavior during the cooling and solidification
of a water/ice system as a basic case and to clarify the dynamic mechanism
of the solidification behavior of liquid films on Si substrates. The
solidification behavior of a water/ice system on Si substrates was
captured on a video at different cooling rates. The recorded video
was subjected to a digital image analysis to examine the crystal morphology
and quantify the interface growth rate. The least-squares method with
kinetic formulas was used to evaluate the feasibility of fitting the
temperature variation to the interface growth rate. A visual examination
of the morphology of interfacial growth revealed that it can be classified
into four morphologies. The proposed kinetic equation describes the
experimental results regarding the temperature dependence of the interfacial
growth rate. Through image analysis, the interface growth rate of
water and ice was quantified, and an evaluation formula was proposed
Kinetics formulation for Two-Dimensional Growth Behavior of Water/Ice Interface on Si Substrate
Sublimation drying is used in the drying process of semiconductor
device manufacturing. However, the solidification behavior mechanics
of sublimation agents on substrates has not been clarified. Therefore,
the properties of solidified films within substrate surfaces can become
nonuniform, leading to their collapse. This study aimed to analyze
the interface growth behavior during the cooling and solidification
of a water/ice system as a basic case and to clarify the dynamic mechanism
of the solidification behavior of liquid films on Si substrates. The
solidification behavior of a water/ice system on Si substrates was
captured on a video at different cooling rates. The recorded video
was subjected to a digital image analysis to examine the crystal morphology
and quantify the interface growth rate. The least-squares method with
kinetic formulas was used to evaluate the feasibility of fitting the
temperature variation to the interface growth rate. A visual examination
of the morphology of interfacial growth revealed that it can be classified
into four morphologies. The proposed kinetic equation describes the
experimental results regarding the temperature dependence of the interfacial
growth rate. Through image analysis, the interface growth rate of
water and ice was quantified, and an evaluation formula was proposed
Kinetics formulation for Two-Dimensional Growth Behavior of Water/Ice Interface on Si Substrate
Sublimation drying is used in the drying process of semiconductor
device manufacturing. However, the solidification behavior mechanics
of sublimation agents on substrates has not been clarified. Therefore,
the properties of solidified films within substrate surfaces can become
nonuniform, leading to their collapse. This study aimed to analyze
the interface growth behavior during the cooling and solidification
of a water/ice system as a basic case and to clarify the dynamic mechanism
of the solidification behavior of liquid films on Si substrates. The
solidification behavior of a water/ice system on Si substrates was
captured on a video at different cooling rates. The recorded video
was subjected to a digital image analysis to examine the crystal morphology
and quantify the interface growth rate. The least-squares method with
kinetic formulas was used to evaluate the feasibility of fitting the
temperature variation to the interface growth rate. A visual examination
of the morphology of interfacial growth revealed that it can be classified
into four morphologies. The proposed kinetic equation describes the
experimental results regarding the temperature dependence of the interfacial
growth rate. Through image analysis, the interface growth rate of
water and ice was quantified, and an evaluation formula was proposed
Kinetics formulation for Two-Dimensional Growth Behavior of Water/Ice Interface on Si Substrate
Sublimation drying is used in the drying process of semiconductor
device manufacturing. However, the solidification behavior mechanics
of sublimation agents on substrates has not been clarified. Therefore,
the properties of solidified films within substrate surfaces can become
nonuniform, leading to their collapse. This study aimed to analyze
the interface growth behavior during the cooling and solidification
of a water/ice system as a basic case and to clarify the dynamic mechanism
of the solidification behavior of liquid films on Si substrates. The
solidification behavior of a water/ice system on Si substrates was
captured on a video at different cooling rates. The recorded video
was subjected to a digital image analysis to examine the crystal morphology
and quantify the interface growth rate. The least-squares method with
kinetic formulas was used to evaluate the feasibility of fitting the
temperature variation to the interface growth rate. A visual examination
of the morphology of interfacial growth revealed that it can be classified
into four morphologies. The proposed kinetic equation describes the
experimental results regarding the temperature dependence of the interfacial
growth rate. Through image analysis, the interface growth rate of
water and ice was quantified, and an evaluation formula was proposed