Evolution of a beam dynamics model for the transport lines in a proton therapy facility

Despite the fact that the first-order beam dynamics models allow an approximated evaluation of the beam properties, their contribution is essential during the conceptual design of an accelerator or beamline. However, during the commissioning some of their limitations appear in the comparison against measurements. The extension of the linear model to higher order effects is, therefore, demanded. In this paper, the effects of particle-matter interaction have been included in the model of the transport lines in the proton therapy facility at the Paul Scherrer Institut (PSI) in Switzerland. To improve the performance of the facility, a more precise model was required and has been developed with the multi-particle open source beam dynamics code called OPAL (Object oriented Particle Accelerator Library). In OPAL, the Monte Carlo simulations of Coulomb scattering and energy loss are performed seamless with the particle tracking. Beside the linear optics, the influence of the passive elements (e.g. degrader, collimators, scattering foils and air gaps) on the beam emittance and energy spread can be analysed in the new model. This allows for a significantly improved precision in the prediction of beam transmission and beam properties. The accuracy of the OPAL model has been confirmed by numerous measurements.Comment: 17 pages, 19 figure

Nucleation and Growth of GaN/AlN Quantum Dots

We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN(0001) in a Stranski-Krastanov mode. In particular, we assess the variation of their height and density as a function of GaN coverage. We show that the GaN growth passes four stages: initially, the growth is layer-by-layer; subsequently, two-dimensional precursor islands form, which transform into genuine three-dimensional islands. During the latter stage, island height and density increase with GaN coverage until the density saturates. During further GaN growth, the density remains constant and a bimodal height distribution appears. The variation of island height and density as a function of substrate temperature is discussed in the framework of an equilibrium model for Stranski-Krastanov growth.Comment: Submitted to PRB, 10 pages, 15 figure

Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices

We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are studied by scanning magneto-optical Kerr rotation microscopy. Related methods are used to demonstrate electrical spin detection of optically-injected spin polarized currents. Dynamical properties of spin transport are inferred from studies based on the Hanle effect, and the influence of strain on spin transport data in these devices is discussed.Comment: 5 pages, 6 figs. ICPS-28 proceedings (July'06, Vienna) for J. Appl. Phy

Spin injection from perpendicular magnetized ferromagnetic δ\delta-MnGa into (Al,Ga)As heterostructures

Electrical spin injection from ferromagnetic $\delta$-MnGa into an (Al,Ga)As p-i-n light emitting diode (LED) is demonstrated. The $\delta$-MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin injection at remanence without an applied magnetic field. The bias and temperature dependence of the spin injection are found to be qualitatively similar to Fe-based spin LED devices. A Hanle effect is observed and demonstrates complete depolarization of spins in the semiconductor in a transverse magnetic field.Comment: 4 pages, 3 figure

Growth and optical properties of GaN/AlN quantum wells

We demonstrate the growth of GaN/AlN quantum well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the range between 4.2 and 2.3 eV for well widths between 0.7 and 2.6 nm, respectively. An internal electric field strength of $9.2\pm 1.0$ MV/cm is deduced from the dependence of the emission energy on the well width.Comment: Submitted to AP