(In) Direct Effects of Customer-Defined Market Orientation on Brand Loyalty through Purchase Intention and Brand Image: A Parallel Mediation Approach

This study investigates the impact of market orientation on brand loyalty, primarily through variables pertaining to the purchase intention and brand image. In order to achieve this aim, this study have resorted to testing the relationships between customer-defined market orientation and purchase intention, and the brand image, leading to brand loyalty. In this regard, the study is quantitative in nature, and uses the cross-sectional design. For this purpose, the primary data were collected from gold jewelry customers (n = 413) from Karachi, Pakistan. Three key findings emerged from the structural model testing. The first finding revealed that the customer, competitor and interventional orientation are positively associated with the purchase intention, brand image and loyalty of gold jewelry customers. Secondly, in simple mediation, the purchase intentions and brand image tend to fully mediate the impact of customer orientation, and competitor orientation on the brand loyalty of gold jewelry customers, while partially mediating the association between the interfunctional coordination and brand loyalty. The third finding revealed that, in parallel to the mediation effect, the impact of customer, competitor and interfunctional orientation on brand loyalty is fully mediated by the purchase intention and brand image. This research is useful for gold jewelry businesses and business owners, since on a comparative level, less research has been conducted in the domestic industry of Pakistan

Method and apparatus for evaluating multilayer objects for imperfections

A multilayer object where the layers are arranged in a stacking direction is evaluated for imperfections such as voids, delaminations, and microcracks. First, an acoustic wave is transmitted into the object in the stacking direction via an appropriate transducer/waveguide combination. The wave propagates through the multilayer object and is received by another transducer/waveguide combination preferably located on the same surface as the transmitting combination. The received acoustic wave is correlated with the presence or absence of imperfections by generating pulse echo signals indicative of the received acoustic wave, wherein the successive signals form distinct groups over time. The respective peak amplitudes of each group are sampled and fitted to an exponential curve, wherein a substantial fit of approximately 80-90 percent indicates the absence of imperfections. Alternatively, the time interval between distinct groups can be measured, wherein equal intervals indicate the absence of imperfections and unequal intervals indicate the presence of imperfections

Phototransistors Development and their Applications to Lidar

Custom-designed two-micron phototransistors have been developed using Liquid Phase Epitaxy (LPE), Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) techniques under Laser Risk Reduction Program (LRRP). The devices were characterized in the Detector Characterization Laboratory at NASA Langley Research Center. It appears that the performance of LPE- and MBE-grown phototransistors such as responsivity, noise-equivalent-power, and gain, are better than MOCVD-grown devices. Lidar tests have been conducted using LPE and MBE devices under the 2-micrometer CO2 Differential Absorption Lidar (DIAL) Instrument Incubator Program (IIP) at the National Center for Atmospheric Research (NCAR), Boulder, Colorado. The main focus of these tests was to examine the phototransistors performances as compared to commercial InGaAs avalanche photodiode by integrating them into the Raman-shifted Eye-safe Aerosol Lidar (REAL) operating at 1.543 micrometers. A simultaneous measurement of the atmospheric backscatter signals using the LPE phototransistors and the commercial APD demonstrated good agreement between these two devices. On the other hand, simultaneous detection of lidar backscatter signals using MBE-grown phototransistor and InGaAs APD, showed a general agreement between these two devices with a lower performance than LPE devices. These custom-built phototransistors were optimized for detection around 2-micrometer wavelength while the lidar tests were performed at 1.543 micrometers. Phototransistor operation at 2-micron will improve the performance of a lidar system operating at that wavelength. Measurements include detecting hard targets (Rocky Mountains), atmospheric structure consisting of cirrus clouds and boundary layer. These phototransistors may have potential for high sensitivity differential absorption lidar measurements of carbon dioxide and water vapor at 2.05-micrometers and 1.9-micrometers, respectively

Disbond Detection Using Peak Amplitude of Pulse-Echo Signals for Various Thicknesses and Transducer Frequencies

The potential for flaws such as disbonds, corrosion, and microcracks in aircraft lap joints and reinforced doublers is a major problem in the aircraft industry today due to the increasing average age of existing aircraft. Several advanced nondestructive testing techniques are being developed for aircraft inspection, including ultrasonics, thermography, eddy currents, X-radiography, and shearography. The focus of this study is to establish a science base for a cost-effective, reliable, and portable ultrasonic system that can be used for nondestructive detection of disbonds in aircraft structure

Infrared Detector Activities at NASA Langley Research Center

Infrared detector development and characterization at NASA Langley Research Center will be reviewed. These detectors were intended for ground, airborne, and space borne remote sensing applications. Discussion will be focused on recently developed single-element infrared detector and future development of near-infrared focal plane arrays (FPA). The FPA will be applied to next generation space-based instruments. These activities are based on phototransistor and avalanche photodiode technologies, which offer high internal gain and relatively low noise-equivalent-power. These novel devices will improve the sensitivity of active remote sensing instruments while eliminating the need for a high power laser transmitter

Progress of 2-micron Detectors for Application to Lidar Remote Sensing

AlGaAsSb/InGaAsSb heterojunction phototransistors were developed at Astropower, Inc under Laser Risk Reduction Program (LRRP) for operation in the 2-micron region. These phototransistors were optimized for 2-micron detection and have high quantum efficiency (>60%), high gain (>10(exp 3)) and low noise-equivalent- power (<5x10(exp -14) W/Hz), while operating at low bias voltage. One of these phototransistors was tested in lidar mode using the 2-micron CO2 Differential Absorption Lidar (DIAL) system currently under development under the Instrument Incubator Program (IIP) at NASA Langley. Lidar measurements included detecting atmospheric structures consisting of thin clouds in the mid-altitude and near-field boundary layer. These test results are very promising for the application of phototransistors for the two-micron lidar remote sensing. In addition, HgCdTe avalanche photodiodes (APD) acquired from Raytheon were used in atmospheric testing at 2-microns. A discussion of these measurements is also presented in this paper

Infrared Detectors Overview in the Short Wave Infrared to Far Infrared for CLARREO Mission

There exists a considerable interest in the broadband detectors for CLARREO Mission, which can be used to detect CO2, O3, H2O, CH4, and other gases. Detection of these species is critical for understanding the Earth?s atmosphere, atmospheric chemistry, and systemic force driving climatic changes. Discussions are focused on current and the most recent detectors developed in SWIR-to-Far infrared range for CLARREO space-based instrument to measure the above-mentioned species. These detector components will make instruments designed for these critical detections more efficient while reducing complexity and associated electronics and weight. We will review the on-going detector technology efforts in the SWIR to Far-IR regions at different organizations in this study

Two-micron Detector Development using Sb-based Material Systems

NASA Langley Research Center (LaRC), in partnership with the University of Delaware (UD), developed AlGaAsSb/InGaAsSb custom-designed phototransistors in the 0.6-2.5 micron wavelength range for applications to laser remote sensing. The phototransistor s performance greatly exceeds the previously reported results at this wavelength range in the literature. The performances of the custom-designed phototransistor, such as responsivity, detectivity, and gain, are improved significantly as compared to the previously published detectors as well as commercial detectors. Detection in the 0.6- to 2.5- micron broadband with a single phototransistor will result in reduction or elimination of heavy and complex optical components now required for multiple wavelength detection in atmospheric remote sensors resulting in smaller, lighter, simpler instruments with higher performance. This high performance broadband phototransistor will eliminate the need for high power laser for active remote sensing and also the Si (1.0- micron cutoff) and InGaAs (extended 2.3- micron cutoff) detectors. The developed broadband phototransistor will be applicable for the next generation of space-based Earth observations and other planetary instruments for active and passive remote sensing with substantial reduction in size, complexity, and weight to measure water vapor, methane, and carbon dioxide in planetary atmospheres as well as aerosol, cloud, water vapor, O2, CO, and CO2 for a broad range of applications to Earth and Space Science Missions under Science Mission Directorate (SMD) research programs

InGaAsSb/AlGaAsSb Heterojunction Phototransistors for Infrared Applications

High quality infrared (IR) quantum detectors are important for several applications, such as atmospheric remote sensing, chemical detection and absorption spectroscopy. Although several IR detectors are commercially available, with different materials and structures, they provide limited performance regarding the signal-to-noise ratio and the corresponding minimum detectable signal. InGaAsSb/AlGaAsSb heterojunction based phototransistors show strong potential for developing IR sensors with improved performance. In this paper, the performance of a novel npn InGaAsSb/AlGaAsSb heterojunction phototransistor is presented. This performance study is based on experimental characterization of the device dark current, noise and spectral response. Detectivity of 1.7x10(exp 9) cmHz(exp 1/2)/W at 2 microns was obtained at 100 C temperature and 2 V bias voltage. This corresponds to a responsivity of 94.7 A/W and an internal gain of 156 with about 37.7% quantum efficiency. Reducing the temperature to -30 C allows to increase the bias to 3V and enhance the detectivity to 8.7x10(exp 10) cmHz(exp 1/2)/W at the same wavelength, which corresponds to a responsivity of 386.5 A/W and an internal gain of 288.2 with about 83.3% quantum efficiency. The device impulse response and linearity, including the corresponding dynamic range, also are presented. Impulse response analysis indicated a settling time of about 1.1 s at 2V and 100 C, while linearity measurements indicated a constant responsivity in the radiation intensity range of 1.6x10(exp -7) W/sq cm and 31.6 mW/sq cm

Recent Development of Sb-based Phototransistors in the 0.9- to 2.2-microns Wavelength Range for Applications to Laser Remote Sensing

We have investigated commercially available photodiodes and also recent developed Sb-based phototransistors in order to compare their performances for applications to laser remote sensing. A custom-designed phototransistor in the 0.9- to 2.2-microns wavelength range has been developed at AstroPower and characterized at NASA Langley's Detector Characterization Laboratory. The phototransistor's performance greatly exceeds the previously reported results at this wavelength range in the literature. The detector testing included spectral response, dark current and noise measurements. Spectral response measurements were carried out to determine the responsivity at 2-microns wavelength at different bias voltages with fixed temperature; and different temperatures with fixed bias voltage. Current versus voltage characteristics were also recorded at different temperatures. Results show high responsivity of 2650 A/W corresponding to an internal gain of three orders of magnitude, and high detectivity (D*) of 3.9x10(exp 11) cm.Hz(exp 1/2)/W that is equivalent to a noise-equivalent-power of 4.6x10(exp -14) W/Hz(exp 1/2) (-4.0 V @ -20 C) with a light collecting area diameter of 200-microns. It appears that this recently developed 2-micron phototransistor's performances such as responsivity, detectivity, and gain are improved significantly as compared to the previously published APD and SAM APD using similar materials. These detectors are considered as phototransistors based-on their structures and performance characteristics and may have great potential for high sensitivity differential absorption lidar (DIAL) measurements of carbon dioxide and water vapor at 2.05-microns and 1.9-microns, respectively