Analysis of jitter impact on high speed transmissions of wavelength-division multiplexing networks

In this study, we conduct a thorough assessment of the effect of jitter occurrence in high speed 10 Gbps and 200 GHz Wavelength-Division Multiplexing (WDM) optical network. First, we present a simulation model to study the effect of jitter presence in the proposed network and then determine the maximum amount of jitter which the network can withstand. The model is then employed to predict the types of jitter received at the end of the transmission line. For the input power level of 0 dBm and Bit Error Rate (BER) of 1E09, the observed total jitter, JT, random jitter, JR and deterministic jitter, JD is 0.2676 UI, 0.1602 UI and 0.1073 UI, respectively

An Analysis of Silicon Waveguide Phase Modulation Efficiency based on Carrier Depletion Effect

This paper highlights the study of carrier depletion effect on silicon waveguide with p-i-n diode and NPN structure. The device performance is predicted by using 2D Silvaco CAD software under different applied voltages. Device performances in terms of modulation efficiency will be discussed

Free Carrier Absorption Loss of p-i-n Silicon-On-Insulator (SOl) Phase Modulator

Silicon high-speed waveguide-integrated electro-optic modulator is one of the critical devices for on-chip optical networks. The device converts data from electrical domain to the optical domain. Most studies for high speed modulation method in Si or Si based device are based on free carrier concentration variations (injection or depletion of free carriers) which are responsible for local refractive index variations and then phase modulation of a guided wave traveling through the active region. A change in the refractive index/absorption can be achieved by injection or depletion of both electron and holes into the intrinsic region of a silicon p-i-n diode. The paper reports on the free carrier absorption (FCA) loss associated with p-i-n silicon-oninsulator (SOl) phase modulator at J... = 1.55 Ilm. The analyses include the effect of various doping concentration and injected free carrier concentration on the FCA. The simulations are realized utilizing the 2-D semiconductor simulation package SIL V ACO

Various Doping Concentration Effect on Silicon-on-Insulator (SOI) Phase Modulator

This paper reports the effect of doping concentration to the electrical characteristic performance of the phase modulator in the carrier injection mode at wavelength 1.55μm. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide with the p-i-n diode structure. The electrical device performance is predicted using the 2-D semiconductor package SILVACO (CAD) software under DC operation. The least doping concentration of p+ and n+ region produces the least change of refractive index of the modulator. Meanwhile, results show that by increasing the doping concentrations, the value of I decreases. This means that the phase modulator performance is better with increased doping concentrations

Various doping concentration effect on silicon on insulator (SOI) phase modulator

This paper reports the effect of doping concentration to the electrical characteristic performance of the phase modulator in the carrier injection mode at wavelength 1.55μm. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide with the p-i-n diode structure. The electrical device performance is predicted using the 2-D semiconductor package SILVACO (CAD) software under DC operation. The least doping concentration of p+ and n+ region produces the least change of refractive index of the modulator. Meanwhile, results show that by increasing the doping concentrations, the value of Iπ decreases. This means that the phase modulator performance is better with increased doping concentrations

Impact of Coupled Resonator Geometry on Silicon-on Insulator Wavelength Filter Characteristics

We have analyzed and discussed the issues arising in the design of Silicon - on - Insulator (SOI) wavelength filters with different types of device geometry. Microring and microdisk geometries have been chosen as the device configurations and in order to demonstrate the device performance and potential, Free Spectral Range (FSR), and Q-factor values are computed. Studies of the transmittance characteristics are carried out using Finite- Difference Time-Domain (FDTD) methods by RSOFT Software. Results show that the microring-based wavelength filter has a FSR of 1.4 THz and a Q-factor value of 486. On the other hand,the microdisk based filter has a broader FSR with slightly smaller Q-factor

Phase modulator based on Silicon-on-Insulator (SOI) rib waveguide

This paper presents the study of electrical characteristic of phase modulator in the carrier injection mode. The phase modulator device has been integrated in the silicon-oninsulator (SOI) rib waveguide by using the p-i-n diode structure. The electrical device performance is predicted by using the 2-D semiconductor package SILVACO (CAD) software under DC operation. In summary, the phase modulator device required 0.035mA drive current to get phase shift at wavelength 1.55μm meanwhile 0.066mA drive current is required for the 1.3μm wavelength

Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide

This paper highlights the study of the carrier injection mode and the carrier depletion mode of the phase modulator. The phase modulator device has been integrated in the silicon rib waveguide by using the p-i-n diode structure. The electrical device performance is predicted by using the 2-D semiconductor package SILVACO (CAD) software under DC operation. Summarily, the phase modulator device has less sensitivity to the effective refractive index changes when operating in reverse biased or depletion mode compared to the forward biased or injection mode

2x2 Optical Switch Based on Silicon-On-Insulator Microring Resonator

In near future, silicon-on-insulator (SOI) microring resonator are expected to be basic components for wavelength filtering and switching due to their compact size and wide free spectral range (FSR). In this paper, a 2X2 optical switch by using active microring resonator is proposed. The switch is consists of second order serially cascaded microring coupled to a pair of waveguide. The ON/OFF state of the design is control by electric signal which will vary the refractive index. The device is design to operate at 1.55μm wavelength. With a 500nm x 200nm rib dimensions, the design is proven to have single mode behaviour. Finite-Difference Time-Domain (FDTD) method simulation by RSOFT software is use to characterize the device performance. The results show that the 2X2 optical switch proposed can be an efficient device to be functioning in WDM application