Fabrication And Electrical Characterization Of Silicon Bipolar Transistors In A O.5µm Based BiCMOS Technology.

Bipolar transistors are well known for its high current driving capability and current gains, while CMOS transistors are dominant in the integrated circuit market because of its low power consumption and small size advantage. The combination of both types of transistor on the same chip provides a high performance circuit with a high packing density. In this work 0.5-µm BiCMOS technology is fully utilized to realize silicon bipolar transistors with optimized performance. Preliminary electrical results are presented on bipolar transistors fabricated for the first time in Malaysia. Significant improvements in electrical device performance can be achieved by optimizing the emitter drive-in temperature and choice of annealing system

Miniaturized 38ghz circular substrate integrated waveguide band pass filter using low temperature co-fired ceramic technology

This study presents design approach for realizing miniaturized Substrate Integrated Waveguide (SIW) Band Pass Filter (BPF) using Low Temperature Co-fired Ceramic (LTCC) technology at TMRND’s LTCC Lab. Design method for the SIW BPF is based on the circular cavity structure with four pole Chebyshev and operating at center frequency of 38 GHz. This SIW BPF is an important part of the Remote Antenna Unit (RAU) transceiver for the Radio over Fiber (RoF) system. Two types of circular SIW BPF have been designed and investigated in term of performance and structure size which are planar SIW BPF and compact SIW BPF. Both SIW BPF were developed using LTCC Ferro A6M materials with dielectric constant of 5.8, loss tangent of 0.002 and metallization of gold. The insertion loss for planar SIW BPF and compact SIW BPF were measured at 6.2 dB and 6.3 dB, respectively. The passband return losses for both types of the SIW BPF were measured at more than 10 dB. The size of the compact SIW BPF is 6.94×6.94 mm2 meanwhile size for planar SIW BPF is 12.15×4.145 mm2. The size of the compact SIW BPF is reduced to nearly 10% compared to a planar SIW BPF structure